64 Flash Memory 169

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28F128J3BS-12ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V		4/8	e1		260	NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F128J3BS-12MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		134217728 bit	2.7 V		4/8	e1		260	NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F320J3BS-11ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	2MX16	2M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V			e1	30	260			13 mm		110 ns	2.7
MT28F320J3BS-11MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		33554432 bit	2.7 V			e1		260			13 mm		110 ns	2.7
MT28F640J3BS-115ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	4MX16	4M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V			e1	30	260			13 mm		115 ns	2.7
MT28F640J3BS-115MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		67108864 bit	2.7 V			e1		260			13 mm		115 ns	2.7
PC28F512P30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
PC28F512P30TFB	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
MT28EW01GABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		105 ns	3
MT28EW01GABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			1073741824 bit	2.7 V						NOR TYPE		13 mm		105 ns	3
MT28EW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	105 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT28EW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	105 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT28FW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT28FW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
M58LT128KSB7ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm		BOTTOM	134217728 bit	1.7 V						NOR TYPE		13 mm		70 ns	1.8
M58LT128KST8ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm		TOP	134217728 bit	1.7 V						NOR TYPE		13 mm		85 ns	1.8
MT28EW01GABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			1073741824 bit	2.7 V				30	260			13 mm		95 ns	3
MT28EW01GABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			1073741824 bit	2.7 V				30	260			13 mm		95 ns	3
MT28EW512ABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		95 ns	3
MT28EW512ABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		95 ns	3
MT28FW01GABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm			3
RC48F4400P0TB00A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	8 mm		BOTTOM	536870912 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10 mm		85 ns	3
RC28F640P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V		8				NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F00AG18AE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	55 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	512	NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified		1073741824 bit	1.7 V		16	e1			NOR TYPE	.000185 Amp	10 mm	YES	96 ns	1.8	NO
MT28EW128ABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	8MX16	8M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			134217728 bit	2.7 V			e1	30	260			13 mm		70 ns	3
MT28EW256ABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		70 ns	3
MT28EW256ABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		70 ns	3
RC28F128P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
MT28FW02GBBA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	105 Cel	128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
PC28F128P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	8 mm	Not Qualified	BOTTOM	134217728 bit	2.3 V		8	e1	30	260	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
PC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	13 mm	YES	88 ns	1.8	NO
RC28F128J3F75F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		75 ns	3
S29GL064N11FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS43	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS23	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS42	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel		NO		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.