8 Flash Memory 254

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
M25P20-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	2.7	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI	2097152 bit	2.3 V			30	260	NOR TYPE	.000005 Amp	4.9 mm	2.7
M25P20-VMP6GB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	2.7	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.9 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	SPI	2097152 bit	2.3 V			30	260	NOR TYPE	.000005 Amp	6 mm	2.7
M25P32-VMW3GB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE					1.27 mm	125 Cel		4MX8	4M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		75 MHz	5.285 mm			33554432 bit	2.7 V			30	260			5.285 mm	2.7
W25Q64FVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm	Not Qualified	SPI	67108864 bit	3 V		e3	30	260		.00005 Amp	5.28 mm
N25Q128A11EF740E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL			R-PDSO-N8		2 V	.9 mm		108 MHz	5 mm			134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		6 mm	1.8
N25Q128A31EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL			R-PDSO-N8		2 V	1 mm		108 MHz	6 mm			134217728 bit	1.7 V					NOR TYPE		8 mm	1.8
M25P16-VMN3YPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm	2.7
M25P40-VMC6GB	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		15 mA	524288 words		2.5/3.3	8	SMALL OUTLINE	SOLCC8,.12,32		Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI	4194304 bit				30	260	NOR TYPE	.00001 Amp		2.7
M25P40-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	524288 words		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI	4194304 bit				30	260	NOR TYPE	.00001 Amp		2.7
M25P10-AVMN6PYA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE						85 Cel		128KX8	128K	-40 Cel		DUAL			R-PDSO-G8		3.6 V			50 MHz				1048576 bit	2.3 V			30	260	NOR TYPE			2.7
W25Q16CVSSJG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE					1.27 mm	105 Cel		2MX8	2M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm			5.23 mm			16777216 bit	2.7 V							5.23 mm	2.7
W25Q16DVSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	4 mm	Not Qualified	SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5 mm	2.7
W25Q256FVEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	268435456 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	6 mm	Not Qualified	SPI	268435456 bit	2.7 V					NOR TYPE	.000025 Amp	8 mm	3
W25Q64FVZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.2	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm	Not Qualified	SPI	67108864 bit	3 V						.00005 Amp	6 mm
N25Q064A13ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.285 mm			67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm	3
W25Q128FVPIF	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm			134217728 bit	2.7 V					NOR TYPE		6 mm	3
W25Q40CLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified	SPI	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm	3
SST26VF064BA-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
SST26WF016B-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	16777216 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
SST26WF016B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI	16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm	1.8
SST26WF016BA-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	16777216 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
SST26WF016BA-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI	16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm	1.8
SST26WF016BAT-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	16777216 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
SST26WF016BAT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI	16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm	1.8
SST26WF016BT-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	16777216 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
SST26WF016BT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI	16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm	1.8
W25Q64FWSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	1.8	1.8	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified	SPI	67108864 bit	1.65 V		e3			NOR TYPE	.00002 Amp	5.28 mm	1.8
M25P128-VME6GB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	10000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified	SPI	134217728 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	8 mm	2.7
LE25S80FDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE					1.27 mm	90 Cel		1MX8	1M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-G8	3	1.95 V	.85 mm		40 MHz	3.9 mm			8388608 bit	1.65 V		e3			NOR TYPE		4.9 mm	1.8
LE25U81AFDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE					1.27 mm	85 Cel		1MX8	1M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8	3	2.7 V	.85 mm		40 MHz	3.9 mm			8388608 bit	2.3 V		e3	30	260	NOR TYPE		4.9 mm	2.7
SST25WF080B-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words	1.8		1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	8388608 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm	1.8
SST25WF080BT-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words	1.8		1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	8388608 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm	1.8
M25P16-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm	2.7
M25P16-VMN6YPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm	2.7
LE25S81MCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE					1.27 mm	90 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-G8		1.95 V	1.75 mm		40 MHz	3.9 mm			8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm	1.8
LE25U81AMCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	2.5		8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-G8		2.7 V	1.75 mm		40 MHz	3.9 mm			8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm	2.7
N25Q064A13ESED0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm	2.7
N25Q064A13ESED0G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm	2.7
N25Q064A13EW7D0E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified	SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	6 mm	2.7
AT26DF161A-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	20 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified	SPI	16777216 bit	2.7 V					NOR TYPE	.000015 Amp	4.925 mm	2.7
AT25DF321-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	3.6 V	2.16 mm	100000 Write/Erase Cycles	70 MHz	5.24 mm	Not Qualified	SPI	33554432 bit	2.7 V		e3			NOR TYPE	.000025 Amp	5.29 mm	2.7
IS25LQ032B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		32MX1	32M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm			33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	2.7
MX25L3233FM1I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		SPI	33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm	3
MX25L51245GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel	TIN	DUAL			R-PDSO-N8	3	3.6 V	.8 mm		104 MHz	6 mm			536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1	e3					8 mm	2.7
MX25U12835FZNI-08G	Macronix	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	27 mA	33554432 words	1.8	1.8	4	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	Not Qualified	SPI	134217728 bit	1.65 V	ALSO CONFIGURABLE AS 128M X 1	e3			NOR TYPE	.00002 Amp	6 mm	1.8
W25Q64FWZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		104 MHz	5 mm			67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
W25Q64BVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	8388608 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm	Not Qualified	SPI	67108864 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm	2.7
AT45DB041B-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm		20 MHz	5.24 mm	Not Qualified	SPI	4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3	40	260	NOR TYPE	.00001 Amp	5.29 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.