| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Adesto Technologies |
FLASH |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
4194304 words |
1 |
SMALL OUTLINE |
125 Cel |
4MX1 |
4M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
85 MHz |
4194304 bit |
2.5 V |
2.7 |
||||||||||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8388608 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1 |
1.27 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
Tin (Sn) |
DUAL |
R-PDSO-N8 |
3.6 V |
.8 mm |
166 MHz |
6 mm |
67108864 bit |
2.7 V |
e3 |
30 |
260 |
8 mm |
3 |
|||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
67108864 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1 |
1.27 mm |
85 Cel |
64MX8 |
64M |
-40 Cel |
DUAL |
R-PDSO-N8 |
1.95 V |
.8 mm |
104 MHz |
6 mm |
536870912 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
8 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
8 |
HVSON |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
20 |
1.27 mm |
85 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-XDSO-N8 |
2 V |
.8 mm |
100000 Write/Erase Cycles |
133 MHz |
5 mm |
SPI |
134217728 bit |
1.65 V |
NOR TYPE |
.000005 Amp |
6 mm |
1.8 |
||||||||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
LSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
TS 16949 |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
3 |
1 |
SMALL OUTLINE, LOW PROFILE |
SOP8,.3 |
100 |
1.27 mm |
85 Cel |
3-STATE |
16MX1 |
16M |
-40 Cel |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-C48 |
3.6 V |
1.68 mm |
100000 Write/Erase Cycles |
104 MHz |
3.9 mm |
SPI |
16777216 bit |
2.7 V |
NOR TYPE |
.000025 Amp |
4.89 mm |
3 |
|||||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
TS 16949 |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
33554432 words |
3 |
1 |
SMALL OUTLINE |
SOP8,.3 |
100 |
1.27 mm |
85 Cel |
3-STATE |
32MX1 |
32M |
-40 Cel |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
2.03 mm |
100000 Write/Erase Cycles |
104 MHz |
5.25 mm |
SPI |
33554432 bit |
2.7 V |
NOR TYPE |
.000045 Amp |
5.26 mm |
3 |
|||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
4 |
SMALL OUTLINE |
2 |
1.27 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
2.16 mm |
104 MHz |
5.23 mm |
134217728 bit |
2.7 V |
ALSO CONFIGURABLE AS 128M X 1 |
e3 |
5.28 mm |
3 |
|||||||||||||||||||||||||||||||
|
|
Onsemi |
FLASH |
INDUSTRIAL |
8 |
VSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
262144 words |
1.8 |
1.8 |
8 |
SMALL OUTLINE, VERY THIN PROFILE |
TSOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3 |
1.95 V |
.85 mm |
100000 Write/Erase Cycles |
40 MHz |
3.9 mm |
Not Qualified |
SPI |
2097152 bit |
1.65 V |
e3 |
30 |
260 |
NOR TYPE |
.00001 Amp |
4.9 mm |
1.8 |
||||||||||||||||||||
|
|
Onsemi |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
262144 words |
1.8 |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
1.95 V |
1.75 mm |
100000 Write/Erase Cycles |
40 MHz |
3.9 mm |
Not Qualified |
SPI |
2097152 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
4.9 mm |
1.8 |
|||||||||||||||||||||||
|
|
Onsemi |
FLASH |
INDUSTRIAL |
8 |
VSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
262144 words |
2.5 |
2.5/3.3 |
8 |
SMALL OUTLINE, VERY THIN PROFILE |
TSOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3 |
3.6 V |
.85 mm |
100000 Write/Erase Cycles |
30 MHz |
3.9 mm |
Not Qualified |
SPI |
2097152 bit |
2.3 V |
e3 |
30 |
260 |
NOR TYPE |
.00001 Amp |
4.9 mm |
3 |
||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
1048576 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
1MX1 |
1M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
1048576 bit |
2.3 V |
e3 |
30 |
260 |
4.9 mm |
3 |
||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
2097152 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
2MX1 |
2M |
-40 Cel |
DUAL |
S-PDSO-G8 |
3.6 V |
2.16 mm |
104 MHz |
5.28 mm |
2097152 bit |
2.3 V |
5.28 mm |
3 |
||||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
262144 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
256KX1 |
256K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
262144 bit |
2.3 V |
e3 |
30 |
260 |
4.9 mm |
3 |
||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4194304 words |
3 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.27 mm |
105 Cel |
4MX1 |
4M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.8 mm |
104 MHz |
5 mm |
4194304 bit |
2.3 V |
6 mm |
3 |
||||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
4194304 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
4MX1 |
4M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
4194304 bit |
2.3 V |
e3 |
30 |
260 |
4.9 mm |
3 |
||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
33554432 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
20 |
1.27 mm |
85 Cel |
3-STATE |
32MX8 |
32M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
120 MHz |
5.23 mm |
SPI |
268435456 bit |
2.7 V |
e3 |
NOR TYPE |
.00002 Amp |
5.28 mm |
3 |
||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
33554432 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.3 |
20 |
1.27 mm |
85 Cel |
3-STATE |
32MX8 |
32M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-XDSO-N8 |
3 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
120 MHz |
6 mm |
SPI |
268435456 bit |
2.7 V |
e3 |
NOR TYPE |
.00002 Amp |
8 mm |
3 |
||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
2097152 words |
1.8 |
4 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
2 |
85 Cel |
2MX4 |
2M |
-40 Cel |
BOTTOM |
R-PBGA-B8 |
3.6 V |
.52 mm |
104 MHz |
8388608 bit |
1.65 V |
IT IS ALSO CONFIGURED AS 8M X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
1.8 |
|||||||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
20 mA |
8388608 words |
1.8 |
1.8 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
8MX1 |
8M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
1.95 V |
.8 mm |
100000 Write/Erase Cycles |
104 MHz |
5 mm |
Not Qualified |
SPI |
8388608 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0000075 Amp |
6 mm |
1.8 |
|||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
8388608 words |
3.3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1 |
20 |
1.27 mm |
85 Cel |
3-STATE |
8MX8 |
8M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
133 MHz |
5 mm |
SPI |
67108864 bit |
3 V |
IT ALSO OPERATES AT 2.7V @ 104MHZ |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
6 mm |
3.3 |
|||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
VSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
20 mA |
2097152 words |
1.8 |
1.8 |
1 |
SMALL OUTLINE, VERY THIN PROFILE |
TSOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
2MX1 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
1.95 V |
.9 mm |
100000 Write/Erase Cycles |
104 MHz |
3.9 mm |
Not Qualified |
SPI |
2097152 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0000075 Amp |
4.9 mm |
1.8 |
|||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
3 |
1 |
SMALL OUTLINE |
SOP8,.3 |
100 |
1.27 mm |
105 Cel |
3-STATE |
16MX1 |
16M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
2.03 mm |
100000 Write/Erase Cycles |
104 MHz |
5.25 mm |
SPI |
16777216 bit |
2.7 V |
e3 |
NOR TYPE |
.000025 Amp |
5.26 mm |
3 |
|||||||||||||||||||||||
|
|
Microchip Technology |
EEPROM |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
NO LEAD |
SERIAL |
SYNCHRONOUS |
30 mA |
4194304 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
100 |
1.27 mm |
105 Cel |
4MX8 |
4M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
104 MHz |
5 mm |
SPI |
33554432 bit |
2.7 V |
e3 |
NOR TYPE |
.000045 Amp |
6 mm |
3 |
||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
35 mA |
1073741824 words |
3 |
3/3.3 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.3 |
Flash Memories |
10 |
1.27 mm |
85 Cel |
1GX1 |
1G |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
104 MHz |
6 mm |
Not Qualified |
SPI |
1073741824 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
.00005 Amp |
8 mm |
3 |
|||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
20 mA |
4194304 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4MX8 |
4M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
108 MHz |
6 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
NOR TYPE |
.0001 Amp |
8 mm |
3 |
|||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
20 mA |
4194304 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.12 |
Flash Memories |
20 |
.8 mm |
85 Cel |
3-STATE |
4MX8 |
4M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.6 mm |
100000 Write/Erase Cycles |
108 MHz |
3 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
4 mm |
3 |
||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
262144 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
75 MHz |
3.9 mm |
2097152 bit |
2.7 V |
NOR TYPE |
4.9 mm |
2.7 |
||||||||||||||||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
67108864 words |
3 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
100 |
1.27 mm |
105 Cel |
3-STATE |
64MX1 |
64M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
104 MHz |
5 mm |
SPI |
67108864 bit |
2.7 V |
e3 |
NOR TYPE |
.000045 Amp |
6 mm |
3 |
|||||||||||||||||||||||
|
|
Adesto Technologies |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
4194304 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
4MX1 |
4M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
3.6 V |
1.75 mm |
66 MHz |
3.9 mm |
4194304 bit |
2.7 V |
ORGANIZED AS 2048 PAGES OF 264 BYTES EACH |
e3 |
NOR TYPE |
4.925 mm |
2.7 |
|||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
4194304 words |
1.8 |
4 |
SMALL OUTLINE |
2 |
1.27 mm |
85 Cel |
4MX4 |
4M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
2.16 mm |
80 MHz |
5.23 mm |
16777216 bit |
1.65 V |
IT IS ALSO CONFIGURED AS 16M X 1 |
5.28 mm |
3 |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
16777216 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
16MX8 |
16M |
-40 Cel |
DUAL |
S-PDSO-G8 |
3.6 V |
2.16 mm |
133 MHz |
5.285 mm |
134217728 bit |
2.7 V |
30 |
260 |
5.285 mm |
3.3 |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
16777216 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.27 mm |
85 Cel |
16MX8 |
16M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.8 mm |
133 MHz |
5 mm |
134217728 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
6 mm |
3.3 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8 mA |
2097152 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.12,32 |
20 |
.8 mm |
90 Cel |
2MX8 |
2M |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
2 |
1.95 V |
.6 mm |
100000 Write/Erase Cycles |
70 MHz |
3 mm |
SPI |
16777216 bit |
1.65 V |
e3 |
30 |
260 |
NOR TYPE |
.00005 Amp |
4 mm |
1.8 |
|||||||||||||||||||||||
|
|
Onsemi |
FLASH |
INDUSTRIAL |
8 |
VSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
1048576 words |
1.8 |
8 |
SMALL OUTLINE, VERY THIN PROFILE |
1.27 mm |
90 Cel |
1MX8 |
1M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
3 |
1.95 V |
.85 mm |
70 MHz |
3.9 mm |
8388608 bit |
1.65 V |
e3 |
30 |
260 |
4.9 mm |
1.8 |
|||||||||||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
TS 16949 |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
4194304 words |
1.8 |
1 |
SMALL OUTLINE |
SOP8,.23 |
100 |
1.27 mm |
85 Cel |
3-STATE |
4MX1 |
4M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
1.95 V |
1.75 mm |
100000 Write/Erase Cycles |
104 MHz |
3.9 mm |
SPI |
4194304 bit |
1.65 V |
e3 |
NOR TYPE |
.000005 Amp |
4.9 mm |
1.8 |
|||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
TS 16949 |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
8388608 words |
1.8 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
100 |
1.27 mm |
85 Cel |
3-STATE |
8MX1 |
8M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
1.95 V |
.8 mm |
100000 Write/Erase Cycles |
104 MHz |
5 mm |
SPI |
8388608 bit |
1.65 V |
e3 |
NOR TYPE |
.000005 Amp |
6 mm |
1.8 |
|||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
TS 16949 |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
67108864 words |
1.8 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
100 |
1.27 mm |
85 Cel |
3-STATE |
64MX1 |
64M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
1.95 V |
.8 mm |
100000 Write/Erase Cycles |
104 MHz |
5 mm |
SPI |
67108864 bit |
1.65 V |
e3 |
NOR TYPE |
.000015 Amp |
6 mm |
1.8 |
|||||||||||||||||||||||
|
|
Microchip Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
TS 16949 |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
67108864 words |
1.8 |
1 |
SMALL OUTLINE |
SOP8,.3 |
100 |
1.27 mm |
85 Cel |
3-STATE |
64MX1 |
64M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
1.95 V |
2.03 mm |
100000 Write/Erase Cycles |
104 MHz |
5.25 mm |
SPI |
67108864 bit |
1.65 V |
e3 |
NOR TYPE |
.000015 Amp |
5.26 mm |
1.8 |
|||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4194304 words |
3 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.27 mm |
105 Cel |
4MX1 |
4M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.8 mm |
104 MHz |
5 mm |
4194304 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
6 mm |
3 |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
524288 words |
2.7 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
50 MHz |
3.9 mm |
4194304 bit |
2.3 V |
30 |
260 |
NOR TYPE |
4.9 mm |
3 |
|||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
AUTOMOTIVE |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
.8 mm |
125 Cel |
32MX1 |
32M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.6 mm |
108 MHz |
3 mm |
33554432 bit |
2.7 V |
NOR TYPE |
4 mm |
3 |
||||||||||||||||||||||||||||||||||||
|
|
Swissbit Ag |
FLASH CARD |
OTHER |
8 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4294967296 words |
3.3 |
8 |
UNCASED CHIP |
85 Cel |
4GX8 |
4G |
-25 Cel |
UPPER |
R-XUUC-N8 |
3.6 V |
1.1 mm |
100 MHz |
11 mm |
34359738368 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
15 mm |
3.3 |
||||||||||||||||||||||||||||||||||
|
|
Swissbit Ag |
FLASH CARD |
INDUSTRIAL |
8 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4294967296 words |
3.3 |
8 |
UNCASED CHIP |
85 Cel |
4GX8 |
4G |
-40 Cel |
UPPER |
R-XUUC-N8 |
3.6 V |
1.1 mm |
100 MHz |
11 mm |
34359738368 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
15 mm |
3.3 |
||||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
4 |
SMALL OUTLINE |
2 |
1.27 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
2.16 mm |
120 MHz |
5.23 mm |
134217728 bit |
2.7 V |
CAN BE ORGANISED AS 128 M X 1 |
e3 |
5.28 mm |
3 |
||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
4 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
2 |
1.27 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.8 mm |
120 MHz |
6 mm |
134217728 bit |
2.7 V |
CAN BE ORGANISED AS 128 M X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
3 |
||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
1.8 |
4 |
SMALL OUTLINE |
2 |
1.27 mm |
85 Cel |
32MX4 |
32M |
-40 Cel |
DUAL |
R-PDSO-G8 |
2 V |
2.16 mm |
104 MHz |
5.23 mm |
134217728 bit |
1.65 V |
IT CAN ALSO BE CONFIGURABLE AS 128MX1 |
NOT SPECIFIED |
NOT SPECIFIED |
5.28 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
134217728 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.27 mm |
85 Cel |
128MX8 |
128M |
-40 Cel |
DUAL |
R-PDSO-N8 |
1.95 V |
.8 mm |
104 MHz |
6 mm |
1073741824 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
8 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
4194304 words |
3.3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
20 |
1.27 mm |
85 Cel |
3-STATE |
4MX8 |
4M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
133 MHz |
5.28 mm |
SPI |
33554432 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
5.28 mm |
3.3 |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.