8 Flash Memory 254

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
W25Q128JWEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI		134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	1.8
W25Q128JWPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	SPI		134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm	1.8
W25Q128JWSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8	8	SMALL OUTLINE	SOP8,.3	1	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI		134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	1.8
SST26WF016BAT-104I/CS	Microchip Technology	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8	1	GRID ARRAY	BGA8,3X5,23		100	.886 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B8		1.95 V	.64 mm	100000 Write/Erase Cycles	104 MHz		SPI		16777216 bit	1.65 V				NOR TYPE	.000005 Amp		1.8
SST26VF016B-104I/SM70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000045 Amp	5.26 mm	3
SST26VF016B-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000045 Amp	4.9 mm	3
SST26VF016B-104V/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000045 Amp	4.9 mm	3
SST26VF016B-80E/SN70SVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000045 Amp	4.9 mm	3
SST26VF016BT-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000045 Amp	4.9 mm	3
SST26VF016BT-80E/SN70SVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000045 Amp	4.9 mm	3
SST25PF040C-40E/MF18GVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm	SPI		4194304 bit	2.3 V				NOR TYPE	.00001 Amp	6 mm	3.3
SST25PF040C-40V/MF18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm	SPI		4194304 bit	2.3 V				NOR TYPE	.00001 Amp	6 mm	3.3
SST25PF040C-40V/SN18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	8	SMALL OUTLINE	SOP8,.23		20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V				NOR TYPE	.00001 Amp	4.9 mm	3.3
SST25PF040CT-40E/SN18GVAO	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	8	SMALL OUTLINE	SOP8,.23		20	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V				NOR TYPE	.00001 Amp	4.9 mm	3.3
SST25PF040CT-40V/NP18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		20	.5 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	40 MHz	2 mm	SPI		4194304 bit	2.3 V				NOR TYPE	.00001 Amp	3 mm	3.3
MT25QL256ABA1EW9-0AAT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	105 Cel		256MX1	256M	-40 Cel	DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm			268435456 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q128A13EF8A0FTR	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel		128MX1	128M	-40 Cel	DUAL			R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm			134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
N25Q032A13ESCA0FTR	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3	1	SMALL OUTLINE				1.27 mm	125 Cel		32MX1	32M	-40 Cel	DUAL			R-PDSO-G8		3.6 V	1.75 mm		108 MHz	3.9 mm			33554432 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm	3
W25Q128JWSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8	8	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI		134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	1.8
SST26VF020A-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	SPI		2097152 bit	2.7 V		30	260	NOR TYPE	.00002 Amp	4.9 mm	3
SST26VF016B-80E/SM	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	2.5	1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	80 MHz	5.25 mm	SPI		16777216 bit	2.3 V				NOR TYPE	.000025 Amp	5.26 mm	2.5
SST25PF040C-40E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3	1	SMALL OUTLINE	SOP8,.23		20	1.27 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V				NOR TYPE	.00001 Amp	4.9 mm	3.3
W25Q64JWZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4	20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	SPI		67108864 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	6 mm	1.8
MX25U12832FZ4I02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI		134217728 bit	1.65 V				NOR TYPE	.000005 Amp	8 mm	1.8
GD25Q32CTIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3	1	SMALL OUTLINE	SOP8,.23		20	1.27 mm	85 Cel		32MX1	32M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	120 MHz	3.9 mm	SPI	BOTTOM/TOP	33554432 bit	2.7 V				NOR TYPE	.000005 Amp	4.9 mm	2.7
GD25Q32CSIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3	1	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel		32MX1	32M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm	SPI	BOTTOM/TOP	33554432 bit	2.7 V				NOR TYPE	.000005 Amp	5.28 mm	2.7
GD25Q16CEIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		20	.5 mm	85 Cel		2MX8	2M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.5 mm	100000 Write/Erase Cycles	120 MHz	2 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000005 Amp	3 mm	3.3
GD25Q16CSIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3	8	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000005 Amp	5.28 mm	3.3
GD25Q16CTIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3	8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	120 MHz	3.9 mm	SPI		16777216 bit	2.7 V				NOR TYPE	.000005 Amp	4.9 mm	3.3
MX25V20066M1I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	DUAL		HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	SPI		2097152 bit	2.7 V	ALSO AVAILABLE WITH 2.3VMIN@50MHZ			NOR TYPE	.00002 Amp	4.9 mm	3
W25X05CLUXIGTR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	12 mA	65536 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		20	.5 mm	85 Cel		64KX8	64K	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm	SPI		524288 bit	2.3 V				NOR TYPE	.00005 Amp	3 mm	3
W25N02KVZEIU	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	268435456 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	60000 Write/Erase Cycles	104 MHz	6 mm	SPI		2147483648 bit	2.7 V				SLC NAND TYPE	.00005 Amp	8 mm	3
W25N02KVZEIR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	268435456 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	60000 Write/Erase Cycles	104 MHz	6 mm	SPI		2147483648 bit	2.7 V				SLC NAND TYPE	.00005 Amp	8 mm	3
SFSD0512N1BM1TO-I-ME-221-STD	Swissbit Ag	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	80 mA	536870912 words	3.3	8	UNCASED CHIP			1		85 Cel		512MX8	512M	-40 Cel	UPPER			R-XUUC-N8		3.6 V	1 mm	100000 Write/Erase Cycles	208 MHz	11 mm			4294967296 bit	2.7 V				SLC NAND TYPE	.015 Amp	15 mm	3.3
MT25QL128ABB1EW7-CSIT	Micron Technology	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	16777216 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	SPI		134217728 bit	2.7 V		30	260	NOR TYPE	.00003 Amp	6 mm	3
AP-MSD08GIA-1HTM	Apacer Technology	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8589934592 words		8	UNCASED CHIP					85 Cel		8GX8	8G	-40 Cel	UPPER			R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm	SPI		68719476736 bit	2.7 V				MLC NAND TYPE		15 mm
S25HL512TDPNHV013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHI013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	85 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHM013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHV010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHB010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHI013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	85 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHB010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHB013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHM013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHB013	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHM010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPNHV010	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL		HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI		536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.