VFBGA Flash Memory 146

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PZ28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F032M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified			33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	60 ns	3	YES
PZ28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWLX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWTX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
MT29F2G08ABBEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F2G16ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F4G08ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F4G16ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MT29F4G16ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MT29F4G16ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		1K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F4G16ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F4G16ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F8G08ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F8G08ADBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		1GX8	1G	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F8G16ADADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	536870912 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			8589934592 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F8G16ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F1G08ABBDAH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V			e1			SLC NAND TYPE		11 mm		25 ns	1.8
MT29F2G08ABBFAH4-IT:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				2147483648 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
MT29F2G08ABBEAHC:ETR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		256MX8	256M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				2147483648 bit	1.7 V			e1			SLC NAND TYPE		13 mm			1.8
MTFC16GJVEC-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL										GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm								TIN SILVER COPPER		BOTTOM		R-PBGA-B169			.8 mm			14 mm								e1					18 mm			3.3
MT29F1G08ABCHC:C	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		128MX8	128M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				1073741824 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F1G08ABCHCET:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				1073741824 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F1G16ABCHC:C	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		64MX16	64M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				1073741824 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F1G16ABCHCET:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				1073741824 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F1G08ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			1073741824 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MTFC16GJDEC-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3
MT29F16G08ADACAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
MT29F2G16ABBEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F2G16ABBEAH4:ETR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	HARDWARE	R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	1.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm			1.8	NO
MX25U3235FBAI-10G	Macronix	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2			.5 mm	85 Cel		8MX4	8M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B12	3	2 V	.48 mm		104 MHz					33554432 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 32M X 1 BIT		e1								1.8
MX30LF2G18AC-XKI	Macronix	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
MT29F1G01AAADDH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm				1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MTFC4GLDEA-0MWTTR	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V			e1			MLC NAND TYPE		13 mm			3.3	NO
MT28EW256ABA1HPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8		20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles		7 mm		.00006 ms		268435456 bit	2.7 V		16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
MT28EW256ABA1LPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8		20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles		7 mm		.00006 ms		268435456 bit	2.7 V		16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
IS22TF32G-JCLA2	Integrated Silicon Solution	FLASH		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		55 mA	34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel	3-STATE	32GX8	32G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm				274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	TLC NAND TYPE	.00003 Amp	13 mm			3.3
MTFC8GAKAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm				NO
MTFC4GACAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			30	260	MLC NAND TYPE		13 mm				NO
MT29F16G16ADBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX16	1G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			17179869184 bit	1.7 V		2K				MLC NAND TYPE	.00005 Amp	11 mm		30 ns	1.8	NO
MT29F1G08ABAFAH4-ITE:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3.3
MT29F1G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F1G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			1073741824 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.