VFBGA Flash Memory 146

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F1G08ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F1G16ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F1G16ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		64MX16	64M	0 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F1G16ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F1G16ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		64MX16	64M	0 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F2G01AAAEDH4-ITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm		2.7
MT29F1G08ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		1.8
MT29F1G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm			1073741824 bit	2.7 V						SLC NAND TYPE		11 mm		2.7
MT29F1G16ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V						SLC NAND TYPE		11 mm		1.8
MT29F2G01AAAEDH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm		2.7
MTFC4GMDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE		13 mm		3.3	NO
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm			137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3.3	NO
MTFC32GJDED-3MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		32GX8	32G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	1 mm		52 MHz	14 mm			274877906944 bit	2.7 V						MLC NAND TYPE		18 mm		3.3	NO
MTFC4GLDEA-0MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE		13 mm		3.3	NO
MTFC8GLDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel		NO	TIN SILVER COPPER NICKEL		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm		3.3	NO
MT29F1G08ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm		1.8
MX25R6435FBDIL0	Macronix	FLASH	INDUSTRIAL	22	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2			.4 mm	85 Cel		16MX4	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B22	3	3.6 V	.52 mm		33 MHz				67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e1							3
MX25R8035FBDIL0	Macronix	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2				85 Cel		2MX4	2M	-40 Cel					BOTTOM		R-PBGA-B8		3.6 V	.52 mm		104 MHz				8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1			NOT SPECIFIED	NOT SPECIFIED					1.8
MT29F2G08ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		2147483648 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MX25R3235FBDIL0	Macronix	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8	2		20	.35 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B12		3.6 V	.52 mm	100000 Write/Erase Cycles	80 MHz			SPI	33554432 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp			1.8
S40410081B1B1I000	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm		3
S40410081B1B1W000	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm		3
S40410161B1B1I010	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13 mm		3
S40410161B1B1W010	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			137438953472 bit	2.7 V						MLC NAND TYPE		13 mm		3
MTFC4GACAJCN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V				30	260	MLC NAND TYPE		13 mm			NO
MTFC8GAKAJCN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm			NO
MT28EW128ABA1HPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		8MX16	8M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B56		3.6 V	1 mm			7 mm			134217728 bit	2.7 V			e1	30	260	NOR TYPE		9 mm	70 ns	3
MT28EW128ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		8MX16	8M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B56		3.6 V	1 mm			7 mm			134217728 bit	2.7 V			e1	30	260	NOR TYPE		9 mm	70 ns	3
MT28EW256ABA1HPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B56		3.6 V	1 mm			7 mm			268435456 bit	2.7 V						NOR TYPE		9 mm	70 ns	3
MT28EW256ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B56		3.6 V	1 mm			7 mm			268435456 bit	2.7 V								9 mm	70 ns	3
MT28EW512ABA1HPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B56		3.6 V	1 mm			7 mm			536870912 bit	2.7 V								9 mm	95 ns	3
MT28EW512ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B56		3.6 V	1 mm			7 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			9 mm	95 ns	3
MT29F2G08ABAEAH4-AATX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		256MX8	256M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm			2147483648 bit	2.7 V						SLC NAND TYPE		11 mm		3.3
MT29F2G08ABAEAWP-AATX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP48,.8,20		Flash Memories		.8 mm	105 Cel		256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified		2147483648 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	11 mm	25 ns	3.3	NO
MT29F2G08ABBEAH4:ETR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		256MX8	256M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm			2147483648 bit	1.7 V			e1			SLC NAND TYPE		11 mm		1.8
MT29F2G16ABDHC:DTR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		128MX16	128M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm			2147483648 bit	1.65 V			e1			SLC NAND TYPE		13 mm		1.8
MT29F2G16ABDHC-ET:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX16	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm			2147483648 bit	1.65 V			e1			SLC NAND TYPE		13 mm		1.8
MT29F4G01AAADDHC-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4294967296 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4GX1	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	10.5 mm			4294967296 bit	2.7 V			e1			SLC NAND TYPE		13 mm		3.3
MT29F1G01AAADDH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm		2.7
MT29F1G08ABADAH4:DTR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		128MX8	128M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm			1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm		3.3
MT29F2G08ABAEAH4-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm			2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm		3.3
MTFC16GAKAECN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			137438953472 bit	2.7 V			e1			MLC NAND TYPE		13 mm		2.7
IS21ES04G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V			e1	10	260			13 mm		3.3
IS21ES08G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm		3.3	NO
IS21ES16G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm		3.3	NO
IS21ES32G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm		3.3	NO
IS22ES04G-JCLA1	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3	3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V			e1	10	260			13 mm		3.3
MT29F1G16ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		64MX16	64M	0 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm			1073741824 bit	1.7 V						SLC NAND TYPE		13 mm		1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.