VFBGA Flash Memory 146

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX25U12835FBBI-10G	Macronix	FLASH	INDUSTRIAL	23	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2			.5 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM			R-PBGA-B23		2 V	.52 mm		104 MHz						134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1			NOT SPECIFIED	NOT SPECIFIED						1.8
W29N01HZBINA	Winbond Electronics	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm					1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
IS34ML01G081-BLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm					1073741824 bit	2.7 V			e1	10	260	SLC NAND TYPE		11 mm			3.3
MT29F4G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified				4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F4G08ABADAH4-AITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm					4294967296 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MT29F1G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				1073741824 bit	2.7 V		2K	e1			SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F1G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm					1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
IS21ES04G-JCLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
IS21ES08G-JCLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
MTFC16GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					137438953472 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC32GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32GX8	32G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
EM04APGD4-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
EM04APYD3-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
MTFC2GMDEA-0MWTA	Micron Technology	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2GX8	2G	-25 Cel			TIN SILVER COPPER NICKEL		BOTTOM			R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm					17179869184 bit	2.7 V	ALSO HAVING MMC CONTROLLER		e2	30	260			13 mm			3.3
MT29F2G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified				2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G01AAADDH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm					1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
SFEM008GB1EA1TO-I-GE-111-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm					68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm			3.3
MTFC4GACAJCN-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
SST25VF080B-50-4I-ZCE	Microchip Technology	FLASH	INDUSTRIAL	16	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		30 mA	8388608 words				1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA16,4X2,20			100	.5 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel					BOTTOM	1	HARDWARE/SOFTWARE	S-PBGA-B16		3.6 V	.4 mm	100000 Write/Erase Cycles	50 MHz	2 mm			SPI		8388608 bit	2.7 V						NOR TYPE	.00003 Amp	2 mm
MX25U51245GBFI0A	Macronix	FLASH		68	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X10,20			20	.4 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B68		2 V	.44 mm	100000 Write/Erase Cycles	166 MHz				SPI		536870912 bit	1.65 V						NOR TYPE	.00005 Amp				1.8
MTFC8GAKAJCN-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm					68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
MTFC64GAPALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					549755813888 bit	2.7 V						NAND TYPE		13 mm
MTFC32GAPALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					274877906944 bit	2.7 V						NAND TYPE		13 mm
MTFC8GAMALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					68719476736 bit	2.7 V						NAND TYPE		13 mm
MTFC8GAMALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					68719476736 bit	2.7 V						NAND TYPE		13 mm
MTFC32GAPALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					274877906944 bit	2.7 V						NAND TYPE		13 mm
MTFC128GAZAQJP-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			137438953472 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		128GX8	128G	-40 Cel					BOTTOM			R-PBGA-B153		1.95 V	1 mm		200 MHz	11.5 mm					1099511627776 bit	1.7 V						NAND TYPE		13 mm			1.8
MTFC64GAZAQHD-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	1.7 V						NAND TYPE		13 mm			1.8
MTFC128GASAQJP-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		128GX8	128G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm					1099511627776 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC128GASAQJP-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	105 Cel		128GX8	128G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm					1099511627776 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC64GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	105 Cel		64GX8	64G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	2.7 V			e1	30	260	NAND TYPE		13 mm				NO
MTFC32GASAQHD-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm					274877906944 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC64GASAQHD-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		64GX8	64G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC32GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	105 Cel		32GX8	32G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm					274877906944 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC64GAZAQHD-WT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		64GX8	64G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	.9 mm			11.5 mm					549755813888 bit	2.7 V						NAND TYPE		13 mm
SFEM032GB1EA1TO-I-HG-12P-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	1 mm	20000 Write/Erase Cycles	200 MHz	11.5 mm					274877906944 bit	2.7 V						SLC NAND TYPE		13 mm			3.3	NO
MT29F1G08ABBEAH4-ITX:E	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32				.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm					1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm			1.8	YES
S29GL256S10GHB010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM			R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm					268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL128S10GHB010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM			R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm				BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10GHB013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM			R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm					268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
MT29F8G08ADADAH4-IT:DTR	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM			R-PBGA-B63		3.6 V	1 mm	100000 Write/Erase Cycles		9 mm					8589934592 bit	2.7 V		2K				SLC NAND TYPE	.0001 Amp	11 mm			3.3	NO
ASFC8G31M-51BIN	Alliance Memory	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm					68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3	NO
ASFC4G31M-51BINTR	Alliance Memory	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm					34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3	NO
S29GL064S90BHI040	Infineon Technologies	FLASH		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		2	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B48		3.6 V	1 mm	100000 Write/Erase Cycles		6.15 mm		60 ms			67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	8.15 mm	YES	90 ns	3	YES
THGAMVT0T43BAIR	Kioxia Holdings	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		135 mA	137438953472 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		128GX8	128G	-25 Cel		YES			BOTTOM			R-PBGA-B153		1.95 V	1 mm		52 MHz	11.5 mm					1099511627776 bit	1.7 V	3.3V SUPPLY IS ALSO AVAILABLE					NAND TYPE	.00104 Amp	13 mm			1.8
EM32FQYHY-BA000-2	Delkin Devices	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM		HARDWARE	R-PBGA-B156			1 mm			11.5 mm					274877906944 bit							TLC NAND TYPE		13 mm			3.3	NO
MTFC4GMXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	4294967296 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel					BOTTOM		HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm					34359738368 bit	1.65 V						NAND TYPE		13 mm			1.8
MTFC8GLXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	8589934592 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel					BOTTOM		HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm					68719476736 bit	1.65 V						NAND TYPE		13 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.