INDUSTRIAL Other Function Memory ICs 106

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel		32KX8	32K	-40 Cel			BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm			8 mm	Not Qualified		262144 bit	3 V						.007 Amp	8 mm	35 ns
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel		32KX8	32K	-40 Cel			BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm			8 mm	Not Qualified		262144 bit	3 V						.007 Amp	8 mm	35 ns
MR256A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G44	3	3.6 V	1.2 mm			10.16 mm	Not Qualified		262144 bit	3 V						.007 Amp	18.41 mm	35 ns
MR256A08BCYS35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G44		3.6 V	1.2 mm			10.16 mm	Not Qualified		262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	18.41 mm	35 ns
NP5Q128AE3ESFC0E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	50 mA	16777216 words		3		3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs		1.27 mm	85 Cel		16MX8	16M	-40 Cel			DUAL		R-PDSO-G16		3.6 V	2.65 mm			7.5 mm	Not Qualified		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.0002 Amp	10.3 mm
NP8P128AE3T1760E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16MX8	16M	-40 Cel			BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm			134217728 bit	2.7 V							10 mm
NP8P128AE3TSM60E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		16777216 words		3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX8	16M	-40 Cel			DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm			134217728 bit	2.7 V							18.4 mm
MR256A08BCSO35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	75 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G32		3.6 V	2.54 mm			7.505 mm	Not Qualified		262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	20.726 mm	35 ns
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		262144 words		3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	105 Cel		256KX16	256K	-40 Cel			BOTTOM		S-PBGA-B48		3.6 V	1.35 mm			8 mm			4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
MR20H40CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS	46.5 mA	524288 words		3.3		3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		512KX8	512K	-40 Cel			DUAL		R-PDSO-N8	3	3.6 V	.9 mm			5 mm	Not Qualified		4194304 bit	3 V						.00075 Amp	6 mm
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	6 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		262144 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
XC17S05PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	53984 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		53984 bit	4.5 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S10PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	95008 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95008 bit	4.5 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S10XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95752 bit	3 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S20PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		178144 bit	4.5 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S20XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		179160 bit	3 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		247968 bit	4.5 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		249168 bit	3 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		329312 bit	4.5 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S40XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		330696 bit	3 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S40SO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	5.5 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		329312 bit	4.5 V		e0	30	225		.00005 Amp	12.8 mm
XC17S40XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		330696 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XC17S05VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	53984 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		53984 bit	4.5 V		e0	30	225		.00005 Amp	4.9 mm
XC17S05XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		54544 bit	3 V		e0	30	225		.00005 Amp	4.9 mm
XC17S10VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	95008 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95008 bit	4.5 V		e0	30	225		.00005 Amp	4.9 mm
XC17S10XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V		e0	30	225		.00005 Amp	4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	178144 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		178144 bit	4.5 V		e0	30	225		.00005 Amp	4.9 mm
XC17S20XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		179160 bit	3 V		e0	30	225		.00005 Amp	4.9 mm
XC17S30VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		247968 bit	4.5 V		e0	30	225		.00005 Amp	4.9 mm
XC17S30XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		249168 bit	3 V		e0	30	225		.00005 Amp	4.9 mm
DS2434-E	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS	WIRE		ASYNCHRONOUS	1.5 mA	256 words				3.6/6.4	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs		1.27 mm	85 Cel		256X1	256	-40 Cel			BOTTOM		O-XBCY-W3		6.4 V					Not Qualified		256 bit	3.6 V						.000003 Amp
CY8C20140-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD		SYNCHRONOUS		2048 words		3			1	CHIP CARRIER, VERY THIN PROFILE				.5 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD		S-XQCC-N16	3	5.25 V	.6 mm			3 mm	Not Qualified		2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260			3 mm
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		262144 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel		256KX16	256K	-40 Cel			BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm			8 mm	Not Qualified		4194304 bit	3 V			40	260		.028 Amp	8 mm	35 ns
SRTAG2K-DMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		256 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-N8			.6 mm			2 mm			2048 bit								3 mm
MR0A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	70 mA	131072 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		128KX8	128K	-40 Cel			DUAL		R-PDSO-G44	3	3.6 V	1.2 mm			10.16 mm	Not Qualified		1048576 bit	3 V						.007 Amp	18.41 mm	35 ns
DSM2180F3-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		131072 words		5			8	FLATPACK				.65 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD		S-PQFP-G52		5.5 V	2.35 mm			10 mm	Not Qualified		1048576 bit	4.5 V		e4					10 mm
DSM2180F3V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND		ASYNCHRONOUS		131072 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J52		3.6 V	4.57 mm			19.1262 mm	Not Qualified		1048576 bit	3 V		e3					19.1262 mm
DSM2180F3V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		131072 words		3.3			8	FLATPACK				.65 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD		S-PQFP-G52		3.6 V	2.35 mm			10 mm	Not Qualified		1048576 bit	3 V		e4					10 mm
DSM2190F4V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND		ASYNCHRONOUS		262144 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN		QUAD		S-PQCC-J52		3.6 V	4.57 mm			19.1262 mm	Not Qualified		2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e3					19.1262 mm
DSM2190F4V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words		3.3			8	FLATPACK				.65 mm	85 Cel		256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD		S-PQFP-G52		3.6 V	2.35 mm			10 mm	Not Qualified		2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e4					10 mm
DSM2150F5V-12T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	80	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words		3.3			16	FLATPACK, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		256KX16	256K	-40 Cel	TIN/NICKEL PALLADIUM GOLD		QUAD		S-PQFP-G80		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	3 V	ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY	e3/e4	NOT SPECIFIED	NOT SPECIFIED			12 mm
XCCACEM16BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	1048576 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		1MX16	1M	-40 Cel			BOTTOM		S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified		16777216 bit	1.71 V					NOR TYPE		35 mm
XCCACEM32BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	2097152 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD		BOTTOM		S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified		33554432 bit	1.71 V		e0			NOR TYPE		35 mm
XCCACEM64BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	4194304 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories		1.27 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD		BOTTOM		S-PBGA-B388		1.89 V	2.87 mm	1000000 Write/Erase Cycles	133 MHz	35 mm	Not Qualified		67108864 bit	1.71 V		e0			NOR TYPE		35 mm
M36DR432AD10ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	26 mA	2097152 words		1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD		BOTTOM		R-PBGA-B66		2.2 V	1.4 mm			8 mm	Not Qualified		33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0				.00001 Amp	12 mm	100 ns
AT88SC0104C-SU	Atmel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		3.3		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX1	1K	-40 Cel	MATTE TIN	1011CCCC	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified	I2C	1024 bit	2.7 V		e3				.0001 Amp	4.925 mm
XC17S10XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V		e3	30	260		.00005 Amp	4.9 mm
DLPR100DWC	Texas Instruments	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING				2097152 words				2.5/3.3	8	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL		R-PDSO-G8	3						Not Qualified		16777216 bit				30	260		.00005 Amp

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.