INDUSTRIAL Other Function Memory ICs 106

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
CY8C24033-24PVXI	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	8192 words				1	SMALL OUTLINE, SHRINK PITCH			.635 mm	85 Cel	8KX1	8K	-40 Cel		DUAL		R-PDSO-G56		5.25 V	2.794 mm	7.5057 mm	Not Qualified	8192 bit	3 V					18.415 mm
MT29C4G48MAZAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	131072 words	1.8	FLASH+SDRAM		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B168		1.95 V	.75 mm	12 mm	Not Qualified	2097152 bit	1.7 V		e1			12 mm
MT29C2G48MAKLCJI-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	131072 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B168		1.95 V	1.1 mm	12 mm	Not Qualified	2097152 bit	1.7 V		e1			12 mm
M39L0R8090U3ZE6E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-40 Cel		BOTTOM		S-PBGA-B133		1.95 V	1 mm	8 mm		536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	8 mm
MR10Q010CMB	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	131072 words	3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel	128KX8	128K	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1.35 mm	6 mm		1048576 bit	3 V					8 mm
ST25TA02K-AC6B5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	256 words				8	UNCASED CHIP				85 Cel	256X8	256	-40 Cel		UPPER		X-XUUC-N						2048 bit
ST25TA02KD-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL		R-PDSO-N8			.6 mm	2 mm		2048 bit				NOT SPECIFIED	NOT SPECIFIED	3 mm
ST25TA02KD-C6H5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	5	BCC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	256 words				8	CHIP CARRIER			.4 mm	85 Cel	256X8	256	-40 Cel		BOTTOM		R-PDSO-N5			.6 mm	1.4 mm		2048 bit				NOT SPECIFIED	NOT SPECIFIED	1.7 mm
ST25TA16K-AB6B3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER		X-XUUC-N						65536 bit
ST25TA512-AC6B5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	64 words				8	UNCASED CHIP				85 Cel	64X8	64	-40 Cel		UPPER		X-XUUC-N						512 bit
ST25TA64K-AB6B3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER		X-XUUC-N						65536 bit
ST25TA02KP-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL		R-PDSO-N8			.6 mm	2 mm		2048 bit				NOT SPECIFIED	NOT SPECIFIED	3 mm
MT29C4G48MAYBBAHK-48AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	512MX8	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B137		1.95 V	1 mm	10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260	13 mm
ST25TA02K-AC6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	256 words				8	UNCASED CHIP				85 Cel	256X8	256	-40 Cel		UPPER		O-XUUC-N						2048 bit
ST25TA02KP-C6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	262144 words				8	UNCASED CHIP				85 Cel	256KX8	256K	-40 Cel		UPPER		O-XUUC-N						2097152 bit				NOT SPECIFIED	NOT SPECIFIED
ST25TA16KAB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER		O-XUUC-N						65536 bit
ST25TA64K-AB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER		O-XUUC-N						65536 bit
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	3 mm		4096 bit	4.5 V		e3	40	260	4.4 mm	400 ns
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		16384 bit	4.5 V		e3	40	260	4.9 mm	400 ns
47L04T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	512 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		4096 bit	2.7 V		e3	40	260	4.4 mm	400 ns
47L16T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		16384 bit	2.7 V		e3	40	260	4.4 mm	400 ns
SMC128AFB6E	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	134217728 words				8	UNCASED CHIP				85 Cel	128MX8	128M	-40 Cel		UPPER		X-XUUC-N						1073741824 bit
SMC512AFB6E	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	536870912 words				8	UNCASED CHIP				85 Cel	512MX8	512M	-40 Cel		UPPER		X-XUUC-N						4294967296 bit
MT29C1G12MAAIVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAIYAMR-5AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAJVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAJYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
THGBMHG6C1LBAU6	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		8589934592 words				8	GRID ARRAY				105 Cel	8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B153						68719476736 bit
THGBMHG7C2LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		17179869184 words				8	GRID ARRAY				105 Cel	16GX8	16G	-40 Cel		BOTTOM		R-PBGA-B153						137438953472 bit
THGBMHG8C4LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		34359738368 words				8	GRID ARRAY				105 Cel	32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B153						274877906944 bit
THGBMHG9C8LBAU8	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		68719476736 words				8	GRID ARRAY				105 Cel	64GX8	64G	-40 Cel		BOTTOM		R-PBGA-B153						549755813888 bit
THGBMHG6C1LBAWL	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8589934592 words				8	GRID ARRAY				85 Cel	8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B153						68719476736 bit
THGBMHG7C2LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	17179869184 words				8	GRID ARRAY				85 Cel	16GX8	16G	-40 Cel		BOTTOM		R-PBGA-B153						137438953472 bit
THGBMHG8C4LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	34359738368 words				8	GRID ARRAY				85 Cel	32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B153						274877906944 bit
THGBMHG9C8LBAWG	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	68719476736 words				8	GRID ARRAY				85 Cel	64GX8	64G	-40 Cel		BOTTOM		R-PBGA-B153						549755813888 bit
ST25TA512-AC6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	RECTANGULAR		YES	1	CMOS	NO LEAD	ASYNCHRONOUS	512 words				8	UNCASED CHIP	DIE OR CHIP			85 Cel	64X8	64	-40 Cel		UNSPECIFIED		R-XUUC-N						512 bit
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	65536 words				1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	105 Cel	64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm	2.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	65536 words				1	SMALL OUTLINE			1.27 mm	105 Cel	64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	4.9 mm
ST25TB512-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	16 words				32	UNCASED CHIP				85 Cel	16X32	16	-40 Cel		UPPER		X-XUUC-N						512 bit
MT29C2G24MAAAAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAABAHAMD-5EIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C2G24MAABAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAABAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C1G12MAACVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C1G12MAACYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C1G12MAADVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
ST25TB02K-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD		2048 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	2KX1	2K	-40 Cel		UNSPECIFIED		O-XUUC-N						2048 bit
ST25TB04K-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	4	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4096 words				1	UNCASED CHIP				85 Cel	4KX1	4K	-40 Cel		UPPER		R-XUUC-N4						4096 bit

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.