INDUSTRIAL Other Function Memory ICs 106

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

ST25TB512-AT6G6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

DIE

ROUND

UNSPECIFIED

YES

1

NO LEAD

512 words

1

UNCASED CHIP

DIE OR CHIP

85 Cel

512X1

512

-40 Cel

UNSPECIFIED

O-XUUC-N

512 bit

MB85AS4MTPF-G-BCERE1

Fujitsu

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

SOP8,.3

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G8

3.6 V

1.73 mm

5.3 mm

4194304 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

5.85 mm

MR45V200BRAZAARL

Lapis Semiconductor

MEMORY CIRCUIT

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

262144 words

3.3

8

IN-LINE

2.54 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDIP-T8

3.6 V

7.62 mm

2097152 bit

2.7 V

9.2 mm

MR44V100AMAZAATL

Lapis Semiconductor

MEMORY CIRCUIT

INDUSTRIAL

8

LSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

131072 words

3.3

8

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G8

3.6 V

1.65 mm

3.9 mm

1048576 bit

1.8 V

4.9 mm

MR45V032AMAZBATL

Lapis Semiconductor

MEMORY CIRCUIT

INDUSTRIAL

8

LSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

4096 words

3.3

8

SMALL OUTLINE, LOW PROFILE

1.27 mm

85 Cel

4KX8

4K

-40 Cel

DUAL

R-PDSO-G8

3.6 V

1.65 mm

3.9 mm

32768 bit

2.7 V

4.9 mm

MT29C4G96MAZBACJG-5IT

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

168

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

268435456 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

256MX16

256M

-40 Cel

BOTTOM

S-PBGA-B168

1.95 V

.9 mm

12 mm

4294967296 bit

1.7 V

MOBILE LPDDR DEVICE ALSO AVAILABLE

NOT SPECIFIED

NOT SPECIFIED

12 mm

MT29C8G96MAZBADJV-5IT

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

168

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

512MX16

512M

-40 Cel

BOTTOM

S-PBGA-B168

1.95 V

1 mm

12 mm

8589934592 bit

1.7 V

MOBILE LPDDR DEVICE ALSO AVAILABLE

NOT SPECIFIED

NOT SPECIFIED

12 mm

AF4GUDI-OEM

Atp Electronics

MEMORY CIRCUIT

INDUSTRIAL

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

4294967296 words

8

UNCASED CHIP

85 Cel

4GX8

4G

-40 Cel

UPPER

X-XUUC-N

34359738368 bit

MT29C1G12MAAIVAMD-5ITTR

Micron Technology

MEMORY CIRCUIT

INDUSTRIAL

130

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

134217728 words

1.8

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.65 mm

85 Cel

128MX8

128M

-40 Cel

BOTTOM

R-PBGA-B130

1.95 V

1 mm

8 mm

1073741824 bit

1.7 V

LPDRAM IS ORGANISED AS 32M X 16

NOT SPECIFIED

NOT SPECIFIED

9 mm

47L64-I/SN

Microchip Technology

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

8192 words

3.3

EEPROM+SRAM

8

SMALL OUTLINE

SOP8,.23

1.27 mm

85 Cel

8KX8

8K

-40 Cel

DUAL

1

R-PDSO-G8

3.6 V

1.75 mm

3.9 mm

65536 bit

2.7 V

4.9 mm

550 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.