INDUSTRIAL SRAM 319

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1270W-100-IND	Dallas Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	2097152 words		3.3	3.3	8	IN-LINE	DIP36,.6		SRAMs	2.54 mm	85 Cel		2MX8	2M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T36						Not Qualified	16777216 bit			e0				.0002 Amp		100 ns
IS62C5128BL-45QLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3					Not Qualified	4194304 bit			e3	30	260		.000015 Amp		45 ns
IS61WV20488BLL-10TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	2097152 words	COMMON		2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	2MX8	2M	1.2 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	16777216 bit							.025 Amp		10 ns
CY7C1021BNL-15ZSXAT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	1048576 bit							.0005 Amp		15 ns
IS61LV25616AL-10BI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.015 Amp		10 ns
IS61LV25616AL-10BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.015 Amp		10 ns
CY7C1520KV18-250BZIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	530 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165				250 MHz		Not Qualified	75497472 bit									.45 ns
CY62147EV30LL-45B2XAT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.000007 Amp		45 ns
NP5Q032AE3ESFC0E	Micron Technology	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			50 mA				3/3.3		SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel					-40 Cel		DUAL		R-PDSO-G16						Not Qualified	33554432 bit							.0002 Amp
NP5Q064AE3ESFC0E	Micron Technology	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			50 mA				3/3.3		SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel					-40 Cel		DUAL		R-PDSO-G16						Not Qualified	67108864 bit							.0002 Amp
IS61WV102416BLL-10MLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		1MX16	1M	2.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm		16777216 bit	2.4 V		e1	10	260	YES	.025 Amp	11 mm	10 ns
IS61WV25616BLS-25TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	4194304 bit							.009 Amp		25 ns
R1Q3A7236ABB-33IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit									.45 ns
R1Q3A7218ABB-33IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	820 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit									.45 ns
R1QEA7218ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1030 mA	4194304 words	COMMON		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.87 Amp		.45 ns
R1QEA7236ABB-20IB0	Renesas Electronics	DDR II PLUS SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	500 MHz	13 mm	Not Qualified	75497472 bit	1.7 V					NO		15 mm	.45 ns
R1QDA3636CBB-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1280 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	37748736 bit							.91 Amp		.45 ns
R1QHA7236ABG-25IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	75497472 bit							.79 Amp		.55 ns
R1QHA7236ABG-25IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	75497472 bit							.79 Amp		.55 ns
R1Q4A7236ABG-33IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	760 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	75497472 bit									.45 ns
R1Q4A7236ABG-40IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	680 mA	2097152 words	COMMON		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit									.45 ns
R1Q2A7218ABB-40IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	890 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit									.45 ns
R1QDA3618CBG-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	37748736 bit							.83 Amp		.45 ns
R1QDA3618CBG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1220 mA	2097152 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	37748736 bit							.87 Amp		.45 ns
R1QAA7236ABB-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1220 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit							.87 Amp		.45 ns
R1QAA7218ABB-20IA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1160 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit							.83 Amp		.45 ns
R1QDA7236ABB-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.91 Amp		.45 ns
R1QDA7218ABB-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1160 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit							.83 Amp		.45 ns
R1QDA7236ABG-22IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1130 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			450 MHz		Not Qualified	75497472 bit							.81 Amp		.45 ns
R1QDA7236ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.91 Amp		.45 ns
R1QDA7218ABG-20IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1160 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			500 MHz		Not Qualified	75497472 bit							.83 Amp		.45 ns
R1QDA7218ABG-19IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1220 mA	4194304 words	SEPARATE		1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			533 MHz		Not Qualified	75497472 bit							.87 Amp		.45 ns
R1Q2A7209ABG-40IB0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	760 mA	8388608 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	8MX9	8M	1.7 V	-40 Cel		BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	75497472 bit									.45 ns
AS6C4008-55STINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3					Not Qualified	4194304 bit							.00003 Amp		55 ns
AS6C4008-55ZINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN	DUAL		R-PDSO-G32	3					Not Qualified	4194304 bit			e3				.00003 Amp		55 ns
CY7C1041CV33-8ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.63 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V		e4	20	260			18.415 mm	8 ns
CY62177ESL-55ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	3	2.5/3.3,5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	2MX16	2M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	33554432 bit	2.2 V	ALSO OPERATES AT 5V SUPPLY	e3	20	260		.000017 Amp	18.4 mm	55 ns
UPD44164182BF5-E33Y-EQ3-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE						15 mm	.45 ns
UPD44164185BF5-E33Y-EQ3-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE						15 mm	.45 ns
UPD44165182BF5-E50Y-EQ3-A	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V							15 mm	.45 ns
7130LA100JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3					Not Qualified	8192 bit			e0	20	225		.004 Amp		100 ns
7130LA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32		SRAMs	.8 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3					Not Qualified	8192 bit			e0	30	240		.004 Amp		55 ns
71321LA55JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3					Not Qualified	16384 bit			e0	20	225		.004 Amp		55 ns
71342SA35JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V				Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp		35 ns
71342SA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32		SRAMs	.8 mm	85 Cel	3-STATE	4KX8	4K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	32768 bit	4.5 V		e0				.015 Amp		55 ns
71421SA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32		SRAMs	.8 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3					Not Qualified	16384 bit			e0	30	240		.03 Amp		25 ns
CY7C1041DV33-10BVIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	8 mm	10 ns
CY7C1041DV33-10BVJXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	3 V		e1	20	260		.01 Amp	8 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.