INDUSTRIAL SRAM 319

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70V26L25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J84	1	3.6 V	4.572 mm		29.2862 mm	Not Qualified	262144 bit	3 V		e0	30	225		.003 Amp	29.2862 mm	25 ns
70V27L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e0	20	240		.006 Amp	14 mm	20 ns
70V27L35PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	235 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V	INTERRUPT FLAGS	e0	20	240		.006 Amp	14 mm	35 ns
70V37L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	32768 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	32KX18	32K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	589824 bit	3 V	INTERRUPT FLAG	e0	20	240		.003 Amp	14 mm	20 ns
70V38L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX18	64K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3 V		e0	20	240		.003 Amp	14 mm	20 ns
70V631S12PRFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	515 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.15 V		e0	30	225		.015 Amp	20 mm	12 ns
7130SA55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.03 Amp	14 mm	55 ns
71321SA55JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0	20	225		.03 Amp	19.1262 mm	55 ns
7133LA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	20	240		.004 Amp	14 mm	25 ns
71342LA25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	25 ns
71342LA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.0015 Amp	14 mm	25 ns
71V25761S183BGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.3 ns
71V3557S75BGI8	Integrated Device Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0	20	225			22 mm	7.5 ns
71V35761S183BGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.3 ns
CY7C1059DV33-12ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX8	1M	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e3	40	260		.02 Amp	18.415 mm	12 ns
7130LA25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e0	20	225		.004 Amp	19.1262 mm	25 ns
7132LA25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e0	20	225		.004 Amp	19.1262 mm	25 ns
AS7C31026C-12BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	3 V		e3/e6	40	260			8 mm	12 ns
CY7C1470BV25-200BZI	Cypress Semiconductor	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e0					17 mm	3 ns
PCF8570P/F5,112	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO	.0000004 Amp	9.5 mm
PCF8570T/F5,512	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G8	2	6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4		260	NO	.0000004 Amp	7.55 mm	3400 ns
PCF8570T/F5,518	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G8	2	6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO		7.55 mm	3400 ns
IS62WV1288BLL-55HLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.5 V		e3					11.8 mm	55 ns
IS62WV1288BLL-55QLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	3 mm		11.305 mm	Not Qualified	1048576 bit	2.5 V		e3	30	260			20.445 mm	55 ns
IS62WV1288BLL-55TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.5 V		e3					18.4 mm	55 ns
MT45W2MW16PGA-70ITTR	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1					8 mm	70 ns
MT45W4MW16BCGB-701ITTR	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1	30	260			8 mm	70 ns
N01L63W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04L63W2AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns
N04L63W2AT27IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04L63W2AT27I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N25S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	262144 bit	1.7 V		e3	30	260		.0000005 Amp	4.9 mm
N25S818HAT21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.1 mm	16 MHz	3 mm	Not Qualified	262144 bit	1.7 V		e3	30	260		.0000005 Amp	4.4 mm
N01L83W2AN25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	11.8 mm	70 ns
N01L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.4 mm	70 ns
N02L63W3AB25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L63W3AB25I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L63W3AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N64S830HAS22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.3 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	65536 bit	2.5 V		e3	30	260		.000004 Amp	4.9 mm
N64S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	8KX8	8K	2.3 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	65536 bit	2.5 V		e3	30	260		.000004 Amp	4.4 mm
N02L83W2AN25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	11.8 mm	70 ns
N02L83W2AN25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	11.8 mm	70 ns
N02L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	18.4 mm	70 ns
N08L63W2AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		8 mm	Not Qualified	8388608 bit	2.3 V						.00001 Amp	10 mm	85 ns
N25S830HAS22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.91 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.000004 Amp	4.9 mm
N25S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.1 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.000004 Amp	4.4 mm
N01L63W3AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04L63W1AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.