SURFACE MOUNT RF & Microwave Amplifiers 393
| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Broadcom |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
560 mA |
3.4 |
SOLCC10,.16,32 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
9 mA |
1.8/2.7 |
SOLCC6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
15 mA |
2.5 |
SOLCC6,.04,14 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin (Sn) |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
200 mA |
3.3/5 |
SOLCC8,.12,20 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
35 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
125 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
125 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
29.7 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
COMPONENT |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
70 Cel |
-10 Cel |
TIN |
e3 |
1000 MHz |
||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
10.8 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
195 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
25.5 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
4.5 mA |
1.8 |
BGA6,2X3,10 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
70 Cel |
-10 Cel |
Tin (Sn) |
e3 |
|||||||||||||||
|
|
Broadcom |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
500 mA |
3.4 |
SOLCC10,.11,24 |
RF/Microwave Amplifiers |
90 Cel |
-20 Cel |
|||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
60 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
70 Cel |
-10 Cel |
Tin (Sn) |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
40 mA |
COMPONENT |
3 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
TIN |
e3 |
40 MHz |
4000 MHz |
|||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
15 mA |
2.5 |
SOLCC6,.04,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
95 mA |
3.3 |
SOLCC10,.12,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
19 mA |
2.5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
110 mA |
3.3 |
SOLCC10,.12,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
14.7 mA |
1.8 |
SOLCC6,.04,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin (Sn) |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
550 mA |
5 |
SOLCC8,.12,20 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
4.1 mA |
3 |
SOLCC6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
28 |
FL16(UNSPEC) |
RF/Microwave Amplifiers |
|||||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
28 |
SOP16(UNSPEC) |
RF/Microwave Amplifiers |
|||||||||||||||||||
|
|
Microchip Technology |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
|
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
60 mA |
5 |
SSOP8,.2 |
RF/Microwave Amplifiers |
85 Cel |
-45 Cel |
|||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
125 mA |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
135 mA |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
1.8/2.85 |
SOLCC6,.04,16 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
143 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
17 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1500 MHz |
3000 MHz |
|||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
143 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
17 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1500 MHz |
3000 MHz |
|||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
1500 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
1500 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
131 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
36.5 dB |
Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
131 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
36.5 dB |
Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
143 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
34.3 dB |
Tin (Sn) |
e3 |
1500 MHz |
2500 MHz |
||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
143 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
34.3 dB |
Tin (Sn) |
e3 |
1500 MHz |
2500 MHz |
||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
31 dB |
-40 Cel |
CMOS COMPATIBLE |
2500 MHz |
2700 MHz |
||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
12 mA |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
2500 MHz |
4000 MHz |
||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
12 mA |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
2500 MHz |
4000 MHz |
||||||||
|
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
6 |
COMPONENT |
5 |
LCC28,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
31.5 dB |
Tin (Sn) |
CMOS COMPATIBLE |
e3 |
700 MHz |
800 MHz |
|||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
83 mA |
COMPONENT |
5 |
LCC16,.1SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.5 dB |
-45 Cel |
Tin (Sn) |
LOW NOISE |
e3 |
0 MHz |
2000 MHz |
|||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
83 mA |
COMPONENT |
5 |
LCC16,.1SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.5 dB |
-45 Cel |
Tin (Sn) |
LOW NOISE |
e3 |
0 MHz |
2000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.