| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
13 mA |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16.3 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
4900 MHz |
6000 MHz |
||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
13 mA |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16.3 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
4900 MHz |
6000 MHz |
||||||||
|
|
Renesas Electronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
8 mA |
COMPONENT |
2.7 |
SOLCC6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
|||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
14 dB |
Tin (Sn) |
e3 |
||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
1.4 |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
Tin (Sn) |
e3 |
800 MHz |
2500 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
10 dBm |
8 mA |
COMPONENT |
3 |
TSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1000 MHz |
2000 MHz |
||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
45 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20.8 dB |
Tin (Sn) |
e3 |
1000 MHz |
2000 MHz |
||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
96 mA |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
12 dB |
Tin (Sn) |
e3 |
850 MHz |
2500 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
86 mA |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin (Sn) |
e3 |
850 MHz |
2500 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
89 mA |
COMPONENT |
9 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin (Sn) |
e3 |
850 MHz |
2500 MHz |
|||||||||
|
NXP Semiconductors |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
95 mA |
COMPONENT |
12 |
DILCC8,.46 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
25 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
5 MHz |
65 MHz |
||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
55 mA |
COMPONENT |
5 |
SOP16,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
850 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
50 mA |
COMPONENT |
5 |
SOP16,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
700 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
25 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
3000 MHz |
|||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
33 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
24 dB |
-40 Cel |
Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
3000 MHz |
|||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
19 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
-10 dBm |
10 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-10 dBm |
21 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
-10 dBm |
5.5 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5.7 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
0 MHz |
2700 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
32 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
580 mA |
MODULE |
3.4 |
SOLCC10,.11,24 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-20 Cel |
1850 MHz |
1910 MHz |
||||||||
|
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
580 mA |
MODULE |
3.4 |
SOLCC10,.11,24 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-20 Cel |
1710 MHz |
1785 MHz |
||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
39.5 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.8 dB |
-40 Cel |
Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
39.5 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.8 dB |
-40 Cel |
Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
49 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.8 dB |
-40 Cel |
Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
49 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.8 dB |
-40 Cel |
Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
13.5 dB |
Gold (Au) - with Nickel (Ni) barrier |
LOW NOISE |
e4 |
1500 MHz |
3000 MHz |
||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
13.5 dB |
Gold (Au) - with Nickel (Ni) barrier |
LOW NOISE |
e4 |
1500 MHz |
3000 MHz |
||||||||
|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
160 mA |
COMPONENT |
4 |
LCC8(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
Nickel/Gold (Ni/Au) |
LOW NOISE |
e4 |
7000 MHz |
21000 MHz |
||||||||
|
Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
11 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
TIN LEAD |
e0 |
2400 MHz |
2500 MHz |
||||||||
|
Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
104 mA |
COMPONENT |
5 |
TSSOP8,.19 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.1 dB |
-40 Cel |
TIN LEAD |
e0 |
44 MHz |
878 MHz |
|||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
136 MHz |
174 MHz |
||||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
5 dBm |
1.25 |
11 mA |
COMPONENT |
3 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
800 MHz |
1000 MHz |
||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
6.4 mA |
COMPONENT |
3/5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.4 dB |
-40 Cel |
TIN LEAD |
e0 |
1400 MHz |
2500 MHz |
|||||||
|
Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
104 mA |
COMPONENT |
5 |
TSSOP8,.19 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.1 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
44 MHz |
878 MHz |
|||||||
|
Maxim Integrated |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
850 MHz |
940 MHz |
||||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
1 |
13 dBm |
1.6 |
COMPONENT |
3.8 |
TO-253 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
0 MHz |
1100 MHz |
|||||||
|
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
2.5 |
515 mA |
COMPONENT |
3.4 |
SOLCC8,.11,32 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-30 Cel |
824 MHz |
849 MHz |
||||||||
|
|
Texas Instruments |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
85 Cel |
14.1 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
2400 MHz |
2483.5 MHz |
||||||||||
|
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
15 dBm |
2 |
COMPONENT |
3.5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
7000 MHz |
||||||||||
|
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
2 |
COMPONENT |
4.7 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-45 Cel |
6000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
52 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1 MHz |
2700 MHz |
||||||||
|
STMicroelectronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
2.7 |
FL6,.047,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
LOW NOISE |
e4 |
||||||||||
|
|
Texas Instruments |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
100 mA |
COMPONENT |
5 |
50 ohm |
85 Cel |
15.7 dB |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
e4 |
50 MHz |
400 MHz |
||||||||||
|
|
Texas Instruments |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
20 dBm |
700 mA |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
26 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2100 MHz |
2700 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.