SURFACE MOUNT RF & Microwave Amplifiers 393

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC8325	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	22		PHEMT		1			50 mA	COMPONENT	3	DIE OR CHIP	50 ohm	85 Cel	19.5 dB	-55 Cel				71000 MHz	86000 MHz
HMC618ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1	10 dBm		65 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	12.5 dB	-40 Cel	MATTE TIN		e3	1200 MHz	2200 MHz
HMC907APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC637BPM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS		1	25 dBm	7		COMPONENT	12	LCC32,.2SQ,20	50 ohm	85 Cel	12.5 dB	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	7500 MHz
HMC637BPM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS		1	25 dBm	7		COMPONENT	12	LCC32,.2SQ,20	50 ohm	85 Cel	12.5 dB	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	7500 MHz
MMZ25332B4T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		23.5 dB		TIN		e3	1500 MHz	2700 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		2	20 dBm	10		COMPONENT	28		50 ohm	150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
MMZ38333BT1	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm	1.58	1200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		36.3 dB		TIN		e3	3400 MHz	3800 MHz
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
A3I35D025WGNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm	150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm	150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz
BGU8062J	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm				NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
BGU8051,118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm	1.07	60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm	150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
CMPA5259050F	Wolfspeed	WIDE BAND HIGH POWER	SURFACE MOUNT	6	CERAMIC	PHEMT		1		3	1000 mA	COMPONENT	28		50 ohm	105 Cel	31 dB	-40 Cel				5200 MHz	5900 MHz
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm	150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
HMC1022A	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8		GAAS		1		1.08		COMPONENT	10	DIE OR CHIP	50 ohm		9.5 dB					0 MHz	48000 MHz
ADPA7007CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT		1	18 dBm		1400 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	18 dB	-55 Cel				18000 MHz	44000 MHz
ADPA7006AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS		1	20 dBm			COMPONENT	5		50 ohm	85 Cel	20 dB	-40 Cel				18000 MHz	44000 MHz
ADPA7006AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS		1	20 dBm			COMPONENT	5		50 ohm	85 Cel	20 dB	-40 Cel				18000 MHz	44000 MHz
ADPA7007AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS		1	27 dBm	1.29		COMPONENT	5		50 ohm	85 Cel	18.5 dB	-40 Cel				20000 MHz	44000 MHz
ADPA7007AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS		1	27 dBm	1.29		COMPONENT	5		50 ohm	85 Cel	18.5 dB	-40 Cel				20000 MHz	44000 MHz
MAAM-011252-DIE	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	8				1	24 dBm	1.67	75 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	18 dB	-40 Cel				30 MHz	8000 MHz
ADL8104ACPZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT		1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	10 dB	-40 Cel				400 MHz	7500 MHz
ADL8104ACPZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT		1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	10 dB	-40 Cel				400 MHz	7500 MHz
ADPA1105ACGZN	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN		1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
ADPA1105ACGZN-R7	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN		1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,40	50 ohm	125 Cel	27.1 dB					3700 MHz	4000 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	30	LCC26,.24X.4,40	50 ohm	125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm	125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm	125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
ADL9005ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT		1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm	85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
MAAM-011290-DIE	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8				1	10 dBm	1.58	140 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	16.5 dB	-40 Cel				5000 MHz	20000 MHz
HMC717ALP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC12,.12SQ,20	50 ohm	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	4800 MHz	6000 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,20	50 ohm	125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm	125 Cel	30 dB					2300 MHz	4200 MHz
F1429MBNELI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	12				1	20 dBm	1.1	86 mA	COMPONENT	3.3/5	LCC12,.08SQ,20	100 ohm	115 Cel	18 dB	-40 Cel		LOW NOISE		3000 MHz	4200 MHz
F6922AVRI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	17700 MHz	21200 MHz
F6922AVRI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	17700 MHz	21200 MHz
F6923AVRI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	14000 MHz	17000 MHz
F6923AVRI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	14000 MHz	17000 MHz
ADPA1107ACPZN	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN		1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm	85 Cel	27 dB	-40 Cel				4800 MHz	6000 MHz
ADPA1107ACPZN-R7	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN		1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm	85 Cel	27 dB	-40 Cel				4800 MHz	6000 MHz
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	27	LCC26,.24X.4,20	50 ohm	125 Cel	25.6 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.