SURFACE MOUNT RF & Microwave Amplifiers 393

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC8412LP2FETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
HMC8412LP2FE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
ADPA7004CHIP-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT	1	18 dBm	1.15		COMPONENT	-0.4,3.5	DIE OR CHIP	50 ohm		85 Cel	13 dB	-55 Cel				40000 MHz	80000 MHz
ADPA7009CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT	1	20 dBm	1.17		COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	17.5 dB	-55 Cel				20000 MHz	54000 MHz
ADL8121ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6		PHEMT	1	32 dBm	1.43		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	15 dB	-40 Cel				25 MHz	12000 MHz
ADL8121ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6		PHEMT	1	32 dBm	1.43		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	15 dB	-40 Cel				25 MHz	12000 MHz
ADL8142ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm	1.38		COMPONENT	2	SOLCC8,.08,20	50 ohm		85 Cel	24.5 dB	-40 Cel				23000 MHz	31000 MHz
ADL8142ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm	1.38		COMPONENT	2	SOLCC8,.08,20	50 ohm		85 Cel	24.5 dB	-40 Cel				23000 MHz	31000 MHz
ADPA1106ACGZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN	1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	33.5 dB	-40 Cel				2700 MHz	3500 MHz
ADPA1106ACGZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN	1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	33.5 dB	-40 Cel				2700 MHz	3500 MHz
MAX2644EXT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
HMC1131LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	12 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	22 dB	-40 Cel	GOLD NICKEL		e4	24000 MHz	35000 MHz
HMC1131LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	12 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	22 dB	-40 Cel	GOLD NICKEL		e4	24000 MHz	35000 MHz
UPC2746TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC1114LP5DE	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC1087F10	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	CERAMIC	GAN	1	34 dBm	6		COMPONENT	28		50 ohm		85 Cel	11 dB	-40 Cel				2000 MHz	20000 MHz
HMC1099LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC7748	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	8 dBm	6	4000 mA	COMPONENT	12,28	MODULE,6LEAD,2.9	50 ohm		70 Cel	58 dB	-40 Cel				2000 MHz	6000 MHz
HMC8120-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	28		PHEMT	1			250 mA	COMPONENT	4		50 ohm		85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz
HMC8120	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	28		PHEMT	1			250 mA	COMPONENT	4		50 ohm		85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz
HMC716ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm	1.38	90 mA	COMPONENT	3,5	LCC16,.12SQ,20	50 ohm		85 Cel	15.5 dB	-40 Cel				3100 MHz	3900 MHz
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
HMC7543-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz
HMC7543	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz
ADL5723ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm		85 Cel	24.1 dB	-40 Cel				10100 MHz	11700 MHz
ADL5726ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm		85 Cel	22.5 dB	-40 Cel				21200 MHz	23600 MHz
HMC392ALC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24		GAAS	1	20 dBm		75 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	14.5 dB	-40 Cel	GOLD NICKEL	HIGH RELIABILITY	e4	3500 MHz	8000 MHz
HMC392A	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10		GAAS	1	20 dBm		75 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	14.5 dB	-55 Cel				3500 MHz	7000 MHz
HMC994ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1			300 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm			11 dB		Matte Tin (Sn)		e3		28000 MHz
HMC8121-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT			PHEMT	1				COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8121	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT			PHEMT	1				COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8142-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			E-PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8142	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			E-PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8401-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm		60 mA	COMPONENT	7.5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				10 MHz	28000 MHz
HMC8401	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm		60 mA	COMPONENT	7.5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				10 MHz	28000 MHz
HMC1114LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC717ALP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm		85 Cel	11 dB	-40 Cel	MATTE TIN		e3	4800 MHz	6000 MHz
MML25231HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		TIN		e3	1000 MHz	4000 MHz
A2I20D040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
MMRF2010GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MMRF2010NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
HMC797ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS	1	27 dBm	7	440 mA	COMPONENT	3.5,10	LCC32,.2SQ,20	50 ohm		85 Cel	11 dB	-40 Cel				0 MHz	22000 MHz
HMC907APM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC5805LS6TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC	GAAS	1	17 dBm	7		COMPONENT	10	LCC16,.24SQ,40/32	50 ohm		85 Cel	13.5 dB	-40 Cel					40000 MHz
HMC8325-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	22		PHEMT	1			50 mA	COMPONENT	3	DIE OR CHIP	50 ohm		85 Cel	19.5 dB	-55 Cel				71000 MHz	86000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.