SURFACE MOUNT RF & Microwave Amplifiers 393

Reset All

Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC8413LP2FETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6		PHEMT		1	25 dBm	1.29		COMPONENT	5	SOLCC6,.08,25	50 ohm	85 Cel	17 dB	-40 Cel			10 MHz	9000 MHz
HMC451-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	4		GAAS		1	10 dBm	1.38	150 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	15 dB	-55 Cel			5000 MHz	20000 MHz
UPC2710TB-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	1.67	29 mA	COMPONENT	5	TSSOP6,.08	50 ohm	85 Cel	33 dB	-40 Cel				1000 MHz
ADL8107ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT		1	22 dBm	1.54		COMPONENT	5	SOLCC8,.08,20	50 ohm	85 Cel	18 dB	-40 Cel			6000 MHz	18000 MHz
TRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm	105 Cel	16 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	11000 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	115 Cel	33.8 dB	-40 Cel			2300 MHz	5000 MHz
HMC462-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3		PHEMT		1	18 dBm	1.25	84 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	12.5 dB	-55 Cel			2000 MHz	20000 MHz
HMC963LC4TR-R5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	PHEMT		1	0 dBm	1.92	65 mA	COMPONENT	3.5	LCC24,.16SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	e4	6000 MHz	26500 MHz
TRF1208RPVT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm	105 Cel	16 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	e4	10 MHz	11000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.