COMPLEX Insulated Gate Bipolar Transistors (IGBT) 290

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS20R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

250 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL RECOGNIZED

FS20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

18

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL APPROVED

FS25R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

205 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

505 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

80 ns

UL APPROVED

FS30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

UL APPROVED

FS35R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

520 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL APPROVED

FS50R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

370 ns

18

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL RECOGNIZED

FS50R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

83 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

NOT SPECIFIED

NOT SPECIFIED

185 ns

FS6R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

260 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

26 ns

UL RECOGNIZED

FS75R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

107 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

NOT SPECIFIED

NOT SPECIFIED

185 ns

FZ1200R33KL2CB5NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

4250 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

1400 ns

FZ1800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2850 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

FZ2400R12HP4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3550 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1440 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

FZ2400R12KE3B9NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1140 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

890 ns

FP100R07N3E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

370 ns

43

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

100 ns

FP100R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP10R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

16 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

26 ns

UL RECOGNIZED

FP10R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP150R07N3E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

450 ns

43

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

FP15R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

22 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

29 ns

UL APPROVED

FP15R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

28 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

495 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL RECOGNIZED

FP20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

27 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

FP25R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP25R12KT4B15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

24

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP25R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

FP30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

37 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FP35R12KT4B15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP35R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

54 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

510 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP50R07N2E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

UL APPROVED

FP50R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

274 ns

23

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

FP50R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP50R12KT4GB15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FS3L30R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

350 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

88 ns

UL APPROVED

FS3L50R07W2H3FB11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

FZ2400R12HE4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3560 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

UL APPROVED

DF200R12PT4B6BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1100 W

300 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

3

407 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

FP06R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

12 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

565 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

FZ800R12KS4B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

660 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

FZ800R45KL3B5NOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9000 W

PLASTIC/EPOXY

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

2

7350 ns

7

FLANGE MOUNT

125 Cel

SILICON

4500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FZ1600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

FZ3600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20000 W

4800 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X9

1

ISOLATED

1050 ns

CM150TX-24S1

Mitsubishi Electric

N-CHANNEL

COMPLEX

NO

935 W

150 A

PLASTIC/EPOXY

MOTOR CONTROL

200 ns

2.25 V

UNSPECIFIED

RECTANGULAR

6

300 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

1000 ns

-40 Cel

20 V

900 ns

6.6 V

TIN

UPPER

R-PUFM-X35

ISOLATED

e3

UL RECOGNIZED

STGIPL14K60

STMicroelectronics

N-CHANNEL

COMPLEX

NO

44 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

6

425 ns

38

IN-LINE

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDIP-T38

ISOLATED

Not Qualified

e3

400 ns

FZ1800R17HP4_B29

Infineon Technologies

N-CHANNEL

COMPLEX

NO

13000 W

1800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

1860 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

260

880 ns

NXH400N100H4Q2F2PG

Onsemi

N-CHANNEL

COMPLEX

NO

959 W

409 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

619 ns

42

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.1 V

UPPER

R-XUFM-X42

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

186 ns

NXH400N100H4Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

959 W

409 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

619 ns

42

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.1 V

UPPER

R-XUFM-X42

ISOLATED

186 ns

NXH300B100H4Q2F2SG-R

Onsemi

N-CHANNEL

COMPLEX

NO

194 W

73 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

326 ns

59

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

5.9 V

UPPER

R-XUFM-X59

ISOLATED

110.42 ns

NXH400N100H4Q2F2SG-R

Onsemi

N-CHANNEL

COMPLEX

NO

959 W

409 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

619 ns

42

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.1 V

UPPER

R-XUFM-X42

ISOLATED

186 ns

NXH800A100L4Q2F2S1G

Onsemi

N-CHANNEL

COMPLEX

NO

714 W

309 A

UNSPECIFIED

POWER CONTROL

2.3 V

PIN/PEG

RECTANGULAR

4

1121.94 ns

17

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

6.7 V

UPPER

R-XUFM-P17

ISOLATED

223.8 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.