COMPLEX Insulated Gate Bipolar Transistors (IGBT) 290

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

A1C15S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

142.8 W

15 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

199 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

134.5 ns

A1C15S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

142.8 W

15 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

199 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

134.5 ns

A1P25S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

197 W

25 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

326 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

139 ns

A1P35S12M3

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

398 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

142 ns

A1P50S65M2-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

331 ns

22

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167.2 ns

A1P50S65M2

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

331 ns

22

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167.2 ns

A2C25S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

197 W

25 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

338 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

125.2 ns

A2C35S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

7

364 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

145 ns

A2C50S65M2-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

298 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167 ns

A2C50S65M2

STMicroelectronics

N-CHANNEL

COMPLEX

NO

208 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

298 ns

35

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

167 ns

NXH160T120L2Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

500 W

181 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

4

435 ns

56

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X56

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

F475R07W2H3B51BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

1.55 V

UNSPECIFIED

RECTANGULAR

4

300 ns

18

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL APPROVED

VS-CPV364M4FPBF

Vishay Intertechnology

N-CHANNEL

COMPLEX

NO

63 W

27 A

PLASTIC/EPOXY

POWER CONTROL

1.5 V

THROUGH-HOLE

RECTANGULAR

6

240 ns

380 ns

13

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

570 ns

6 V

SINGLE

R-PSFM-T13

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

60 ns

UL RECOGNIZED

A1P25S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

197 W

25 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

326 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

139 ns

A1P35S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

250 W

35 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

6

398 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

142 ns

F3L225R07W2H3PB63BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.65 V

UNSPECIFIED

RECTANGULAR

4

110 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

170 ns

F3L25R12W1T4B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

54 ns

UL APPROVED

F575R06KE3B5BOSA1

Infineon Technologies

N-Channel

COMPLEX

NO

250 W

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

270 ns

35

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

A2P75S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

454.4 W

75 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

517 ns

33

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

235 ns

NXH80T120L2Q0P2G

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

NXH80T120L2Q0S2TG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

NXH160T120L2Q2F2S1G

Onsemi

N-CHANNEL

COMPLEX

NO

500 W

181 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

4

435 ns

56

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X56

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

NXH25T120L2Q1PG

Onsemi

N-CHANNEL

COMPLEX

YES

81 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

12

551 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

77 ns

NXH25T120L2Q1PTG

Onsemi

N-CHANNEL

COMPLEX

YES

81 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

12

551 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

77 ns

NXH240B120H3Q1PG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

68 A

UNSPECIFIED

MOTOR CONTROL

2 V

UNSPECIFIED

RECTANGULAR

3

337 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

UPPER

R-XUFM-X32

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

54 ns

NXH40T120L3Q1PG

Onsemi

N-CHANNEL

COMPLEX

NO

146 W

42 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

12

305 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

83 ns

NXH40T120L3Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

146 W

42 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

12

305 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

83 ns

F3L200R12N2H3B47BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

520 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

253 ns

FP10R12W1T7B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

10 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

1005 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FP25R12W1T7B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

730 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

65 ns

FS100R12W2T7B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

655 ns

33

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

221 ns

2PS06017E32G28213NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

MICROELECTRONIC ASSEMBLY

SILICON

UNSPECIFIED

R-XXMA-X

ISOLATED

2PS13512E43W35222NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

2PS18012E44G38553NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1200 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

2PS18012E44G40113NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

60 Cel

SILICON

1200 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS10017E41W36460BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W39872NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W39873NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W41646NOSA1

Infineon Technologies

N-Channel

COMPLEX

YES

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

NOT SPECIFIED

NOT SPECIFIED

6MS30017E43W34404NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS30017E43W40372NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FPF2G75FH07BP

Onsemi

N-CHANNEL

COMPLEX

NO

236 W

75 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

462 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

25 V

6.8 V

UPPER

R-XUFM-X32

LOW CONDUCTION LOSS

124 ns

NXH200T120H3Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

679 W

256 A

UNSPECIFIED

POWER CONTROL

102 ns

2.3 V

UNSPECIFIED

RECTANGULAR

4

99 ns

1096 ns

56

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X56

ISOLATED

373 ns

NXH35C120L2C2ESG

Onsemi

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

6

485 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-XDIP-T26

240 ns

NXH100T120L3Q0S1NG

Onsemi

N-CHANNEL

COMPLEX

NO

328 W

100 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

412 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

93 ns

NXH50M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

86 W

48 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

130 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

39 ns

NXH300B100H4Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

194 W

73 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

326 ns

59

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

5.9 V

UPPER

R-XUFM-X59

ISOLATED

110.42 ns

NXH300B100H4Q2F2PG

Onsemi

N-CHANNEL

COMPLEX

NO

194 W

73 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

326 ns

59

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

5.9 V

UPPER

R-XUFM-X59

ISOLATED

110.42 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.