COMPLEX Insulated Gate Bipolar Transistors (IGBT) 290

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FD16001200R17HP4B2BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1710 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

650 ns

FZ2400R17HP4B28BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

9

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X9

1

ISOLATED

710 ns

UL APPROVED

FZ3600R17HE4PHPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2245 ns

9

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1075 ns

IFS150B12N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

750 W

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

640 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

240 ns

UL RECOGNIZED

FZ1200R17HE4PHPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1760 ns

7

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

955 ns

FZ1200R45HL3BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

6670 ns

9

FLANGE MOUNT

SILICON

4500 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1100 ns

IEC-1287

FZ1600R17HP4B21BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1710 ns

7

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X7

1

ISOLATED

690 ns

UL APPROVED

FZ2400R17HE4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X9

1

ISOLATED

760 ns

FZ2400R17HE4PB9HPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

760 ns

FP10R12W1T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP15R12W1T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

28 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

495 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

FP35R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP50R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP75R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP10R12YT3B4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

16 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

540 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

70 ns

FS15R06XL4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

135 ns

16

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X16

ISOLATED

29 ns

FP10R12W1T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP15R12W1T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

510 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

130 ns

FP25R12W2T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

FP35R12W2T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

54 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

510 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP75R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP75R17N3E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

125 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FZ1200R12HE4PHPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1825 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

1130 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

660 ns

FZ2400R12HE4PB9HPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

F3L300R07PE4PBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

600 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

F3L100R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

465 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

175 ns

UL APPROVED

F3L150R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

510 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

F3L200R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

480 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

F475R07W2H3B51BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

300 ns

28

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X28

ISOLATED

45 ns

UL APPROVED

F3L400R12PT4PB26BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

610 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL RECOGNIZED

FP150R12KT4B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

FP150R12KT4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

FP150R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

FP150R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

FP75R17N3E4B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FZ1200R12HE4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1825 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1130 ns

7

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X7

1

ISOLATED

660 ns

UL APPROVED

FZ1200R17HE4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

7800 W

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

1760 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

955 ns

UL APPROVED

DF160R12W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

375 ns

30

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

DF200R12W1H3FB11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

27 ns

DF75R12W1H4FB11BOMA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

500 ns

17

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X17

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

58 ns

DF80R12W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

375 ns

22

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

DF200R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

F3L75R12W1H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

F3L75R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

F450R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

203 ns

20

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL RECOGNIZED

FB10R06KL4GB1BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

260 ns

22

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X22

ISOLATED

58 ns

FB15R06KL4B1BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

19 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

249 ns

26

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X26

ISOLATED

71 ns

FS3L25R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

12

295 ns

34

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.