NO Insulated Gate Bipolar Transistors (IGBT) 1,397

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS150R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

605 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

165 ns

UL RECOGNIZED

FS15R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

22 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

260 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

1

ISOLATED

29 ns

UL RECOGNIZED

FS200R07N3E4RB11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

450 ns

35

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FS200R12KT4RB11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

FS20R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

250 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL RECOGNIZED

FS20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

18

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL APPROVED

FS25R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

205 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

505 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

80 ns

UL APPROVED

FS30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

22

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

UL APPROVED

FS35R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

520 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

57 ns

UL APPROVED

FS50R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

370 ns

18

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL RECOGNIZED

FS50R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL APPROVED

FS50R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

83 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

NOT SPECIFIED

NOT SPECIFIED

185 ns

FS50R17KE3B17BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

82 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

1100 ns

19

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

450 ns

UL APPROVED

FS6R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

260 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

26 ns

UL RECOGNIZED

FS75R07N2E4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

25

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL APPROVED

FS75R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL APPROVED

FS75R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

107 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

NOT SPECIFIED

NOT SPECIFIED

185 ns

FZ1200R33KL2CB5NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

4250 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

1400 ns

FZ1800R12HP4B9NPSA1

Infineon Technologies

N-CHANNEL

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

NO

2700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1330 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

FZ1800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2850 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

FZ2400R12HP4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3550 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1440 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

FZ2400R12KE3B9NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1140 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

890 ns

FZ400R33KL2CB5NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4250 ns

5

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1400 ns

IFS100B12N3E4B31BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

515 W

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

610 ns

34

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FD600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

950 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

900 ns

FD800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1900 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

1

ISOLATED

900 ns

FD800R33KF2CKNOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

480 ns

FF1000R17IE4DB2BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1400 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

760 ns

FF1200R17KP4B2NOSA2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

2380 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

1060 ns

FF450R12ME4B11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

2250 W

675 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

740 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

290 ns

UL APPROVED

FF450R17ME4B11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

2500 W

600 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

1600 ns

11

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

FF600R07ME4B11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

570 ns

11

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL APPROVED

FF600R12ME4B11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

995 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

770 ns

11

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

UL RECOGNIZED

FF600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

950 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

900 ns

FF600R17KF6CB2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

975 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1220 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

470 ns

FF600R17ME4B11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

4050 W

950 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

980 ns

11

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

320 ns

UL APPROVED

FF650R17IE4DB2BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

4150 W

930 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1870 ns

10

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

765 ns

FF800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

FP100R07N3E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

370 ns

43

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

100 ns

FP100R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP10R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

16 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

26 ns

UL RECOGNIZED

FP10R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP10R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

500 ns

21

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP150R07N3E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

450 ns

43

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

FP15R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

22 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

29 ns

UL APPROVED

FP15R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

28 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

495 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL RECOGNIZED

FP15R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

28 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

495 ns

20

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL APPROVED

FP20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

27 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.