NO Insulated Gate Bipolar Transistors (IGBT) 1,397

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FP25R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP25R12KT4B15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

24

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP25R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

FP30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

37 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FP35R12KT4B15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP35R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

54 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

510 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP50R07N2E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

UL APPROVED

FP50R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

274 ns

23

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

FP50R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FP50R12KT4GB15BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

FS3L30R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

350 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

88 ns

UL APPROVED

FS3L50R07W2H3FB11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

FZ2400R12HE4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3560 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

UL APPROVED

IFS150B12N3E4B31BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

640 ns

41

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X41

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

240 ns

UL APPROVED

IFS75B12N3E4B31BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

570 ns

34

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

DF200R12PT4B6BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1100 W

300 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

3

407 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

FD1200R17KE3KNOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

2100 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FD300R12KS4B5HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1950 W

370 A

UNSPECIFIED

3.75 V

UNSPECIFIED

RECTANGULAR

1

590 ns

7

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

FD400R12KE3B5HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

580 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

FF400R12KE3B2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2000 W

580 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

760 ns

7

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

345 ns

FF800R17KP4B2NOSA2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1650 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

790 ns

FP06R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

94 W

12 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

565 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

95 ns

UL APPROVED

FS150R17N3E4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

835 W

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

1240 ns

35

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

280 ns

UL APPROVED

FZ800R12KS4B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

660 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

225 ns

FZ800R45KL3B5NOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9000 W

PLASTIC/EPOXY

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

2

7350 ns

7

FLANGE MOUNT

125 Cel

SILICON

4500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FZ1600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

FZ3600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20000 W

4800 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X9

1

ISOLATED

1050 ns

FZ600R17KE3S4HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3150 W

840 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

5

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

UL APPROVED

VS-40MT120UHAPBF

Vishay Intertechnology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

463 W

80 A

PLASTIC/EPOXY

POWER CONTROL

4.91 V

PIN/PEG

RECTANGULAR

2

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6 V

UPPER

R-PUFM-P10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

STGFW30H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

58 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGWT30H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGP7NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

63 ns

STGFW40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

62.5 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

NGTB50N60FL2WG

Onsemi

N-CHANNEL

NO

417 W

100 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

IXGM40N60A

IXYS Corporation

N-CHANNEL

SINGLE

NO

250 W

75 A

METAL

POWER CONTROL

3 V

PIN/PEG

ROUND

1

900 ns

2

FLANGE MOUNT

Insulated Gate BIP Transistors

250 W

150 Cel

SILICON

600 V

20 V

5 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

HIGH SPEED

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

300 ns

CM150TX-24S1

Mitsubishi Electric

N-CHANNEL

COMPLEX

NO

935 W

150 A

PLASTIC/EPOXY

MOTOR CONTROL

200 ns

2.25 V

UNSPECIFIED

RECTANGULAR

6

300 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

1000 ns

-40 Cel

20 V

900 ns

6.6 V

TIN

UPPER

R-PUFM-X35

ISOLATED

e3

UL RECOGNIZED

STGY80H65DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

469 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

358 ns

3

IN-LINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

128 ns

IXSK35N120AU1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

70 A

PLASTIC/EPOXY

MOTOR CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

1100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1200 V

20 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-264

NOT SPECIFIED

NOT SPECIFIED

230 ns

IXSH45N120

IXYS Corporation

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

1650 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

330 ns

IXSN55N120A

IXYS Corporation

N-CHANNEL

SINGLE

NO

80 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

600 ns

4

FLANGE MOUNT

SILICON

1200 V

NICKEL

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

140 ns

IXSH24N60A

IXYS Corporation

N-CHANNEL

SINGLE

NO

150 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

925 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

e1

300 ns

IXSH24N60AU1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

48 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

925 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247

NOT SPECIFIED

NOT SPECIFIED

300 ns

IXSH45N100

IXYS Corporation

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

1500 ns

2750 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

1000 V

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

400 ns

IXGN50N60BD2

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

FAST

50 ns

IXGH32N60AU1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

175 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

60 ns

IXGH39N60B

IXYS Corporation

N-CHANNEL

SINGLE

NO

200 W

76 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

55 ns

IXGH50N60A

IXYS Corporation

N-CHANNEL

SINGLE

NO

250 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

880 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

250 W

150 Cel

SILICON

600 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e1

290 ns

IXGN60N60

IXYS Corporation

N-CHANNEL

SINGLE

NO

250 W

100 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

700 ns

650 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

FAST

50 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.