| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
189 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
42.5 ns |
||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
189 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
e3 |
42.5 ns |
||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
366 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-247AC |
e3 |
46 ns |
|||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
247 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
19 ns |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3800 W |
1000 A |
UNSPECIFIED |
POWER CONTROL |
4.9 V |
UNSPECIFIED |
RECTANGULAR |
1 |
6500 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
6300 V |
20 V |
UPPER |
R-XUFM-X7 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1120 ns |
|||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
COMPLEX |
NO |
44 W |
14 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
6 |
425 ns |
38 |
IN-LINE |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
MATTE TIN |
DUAL |
R-PDIP-T38 |
ISOLATED |
Not Qualified |
e3 |
400 ns |
|||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
240 W |
80 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
564 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
25 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
83 ns |
|||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AA |
e3 |
153 ns |
||||||||||||||||||||||
|
|
Microsemi |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
NO |
961 W |
200 A |
UNSPECIFIED |
MOTOR CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
4 |
390 ns |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
TIN SILVER COPPER |
UPPER |
R-XUFM-X12 |
1 |
ISOLATED |
Not Qualified |
e1 |
190 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2600 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
360 ns |
9 |
FLANGE MOUNT |
175 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
490 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
13000 W |
1800 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
3 |
1860 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X5 |
1 |
ISOLATED |
Not Qualified |
260 |
880 ns |
||||||||||||||||||||||
|
|
Sanken Electric |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
420 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
175 ns |
|||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
176 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
37000 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
12 V |
2.3 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
7600 ns |
||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
176 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
37000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
380 V |
12 V |
2.3 V |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-220AB |
e3 |
7600 ns |
||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
272 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
32 ns |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
600 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
60 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
20 ns |
139 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AB |
e3 |
66 ns |
AEC-Q101 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
349 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
165 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7.5 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
186 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
291 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
NOT SPECIFIED |
NOT SPECIFIED |
61 ns |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
186 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
291 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
61 ns |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
186 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
291 ns |
22 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
Matte Tin (Sn) - annealed |
UPPER |
R-XUFM-X22 |
ISOLATED |
RC-IGBT |
e3 |
61 ns |
|||||||||||||||||||||
|
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
189 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
39 ns |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
196.4 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
73.6 ns |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
959 W |
409 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
619 ns |
42 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.1 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
186 ns |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
959 W |
409 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
619 ns |
42 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.1 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
186 ns |
||||||||||||||||||||||||
|
Alpha & Omega Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
36 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.15 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
108 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-55 Cel |
30 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
33 ns |
|||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
261 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
219 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7.3 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
43 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7.3 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
66 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
529 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
276 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7.3 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
80 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
230.8 W |
42 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.82 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
139 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.3 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
1 |
COLLECTOR |
TO-247 |
e3 |
30 |
260 |
48 ns |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
365 W |
167 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
4 |
694 ns |
36 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
5.2 V |
UPPER |
R-XUFM-X36 |
ISOLATED |
211 ns |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
205 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7.1 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
43.2 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
469 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
696 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
88 ns |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
169.6 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
SINGLE |
R-PSFM-T4 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
44.8 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
194 W |
73 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
6 |
326 ns |
59 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
5.9 V |
UPPER |
R-XUFM-X59 |
ISOLATED |
110.42 ns |
|||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
959 W |
409 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
4 |
619 ns |
42 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.1 V |
UPPER |
R-XUFM-X42 |
ISOLATED |
186 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
714 W |
309 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
PIN/PEG |
RECTANGULAR |
4 |
1121.94 ns |
17 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.7 V |
UPPER |
R-XUFM-P17 |
ISOLATED |
223.8 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
714 W |
309 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
PIN/PEG |
RECTANGULAR |
4 |
1121.94 ns |
17 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-40 Cel |
20 V |
6.7 V |
UPPER |
R-XUFM-P17 |
ISOLATED |
223.8 ns |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
190 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
416 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
61 ns |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
180 W |
50 A |
UNSPECIFIED |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
3 |
360 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
UL APPROVED |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
145 W |
20 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
12 |
355 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
67 ns |
UL APPROVED |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
525 ns |
33 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
196 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
515 W |
140 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
410 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
UL RECOGNIZED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
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|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
215 W |
65 A |
UNSPECIFIED |
POWER CONTROL |
1.7 V |
UNSPECIFIED |
RECTANGULAR |
4 |
342 ns |
28 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
34 ns |
UL APPROVED |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
385 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
178 ns |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
535 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
564 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
154 ns |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
232 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
Tin (Sn) |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
417 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
341 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
139 ns |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
595 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
150 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.