NO Insulated Gate Bipolar Transistors (IGBT) 1,397

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RGTH40TS65GC11

ROHM

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

141 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

47 ns

RGTH60TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

58 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

179 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

67 ns

STGWT15H60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

115 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

34 ns

MG12600WB-BR2MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

750 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

1290 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

520 ns

UL RECOGNIZED

FGH40T65SQD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

F475R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

275 W

75 A

UNSPECIFIED

POWER CONTROL

1.85 V

UNSPECIFIED

RECTANGULAR

4

213 ns

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL APPROVED

FD1200R17HP4KB2BOSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6500 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

1800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

900 ns

UL APPROVED

FD16001200R17HP4KB2BOSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

10500 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

2

1710 ns

9

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

650 ns

UL APPROVED

FD800R17HP4KB2BOSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5200 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

2000 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

670 ns

UL APPROVED

FF300R12KE4EHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1600 W

460 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

325 ns

UL APPROVED

FF600R12IP4VBOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

3350 W

PLASTIC/EPOXY

2.05 V

UNSPECIFIED

RECTANGULAR

2

1050 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

FF600R12ME4AB11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

3350 W

950 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

620 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

230 ns

UL RECOGNIZED

RGT50TM65DGC9

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

65 ns

RGTV60TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

201 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

45 ns

NXH80T120L2Q0S2G

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

BSM400GA120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

550 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

630 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

210 ns

FS3L30R07W2H3FB11BPSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

350 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

88 ns

UL APPROVED

FS3L50R07W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

FZ1200R12HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

4930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

890 ns

FZ1200R17HP4B2BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-PUFM-X7

1

ISOLATED

850 ns

FZ1200R17HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X4

1

ISOLATED

960 ns

FZ1600R12HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

4930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

890 ns

FZ1600R17HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

1

ISOLATED

1075 ns

FZ1800R12HP4B9HOSA2

Infineon Technologies

N-CHANNEL

PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE

NO

2700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1330 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

720 ns

FZ1800R17HP4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

FZ2400R12HP4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

3550 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1440 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

880 ns

FZ2400R12HP4HOSA2

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3460 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1440 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

1

ISOLATED

880 ns

FZ2400R17HP4B29BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

665 ns

FZ2400R17HP4B2BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

1

ISOLATED

930 ns

FZ2400R17HP4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

1

ISOLATED

760 ns

FZ2400R17HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X4

1

ISOLATED

1010 ns

FZ3600R12HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

4930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

890 ns

FZ3600R17HP4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

1

ISOLATED

1075 ns

IGZ100N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

161 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

40 ns

IHW40N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

321 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

59 ns

IKU10N60RXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

IN-LINE

175 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

24 ns

IKW75N65EL5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

474 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

IKZ50N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

366 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

60 ns

FF600R12ME4CPBPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1060 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

710 ns

11

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

300 ns

FP100R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

210 ns

FP25R12W2T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

685 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

133 ns

FP35R12W2T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

54 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

510 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FS100R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X25

ISOLATED

185 ns

FS150R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

605 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

165 ns

FS200R07A1E3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

13

FLANGE MOUNT

175 Cel

SILICON

650 V

UPPER

R-XUFM-X13

1

ISOLATED

120 ns

FS200R12KT4RPBPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

FS3L50R07W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

FS800R07A2E3BOSA4

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

690 ns

33

FLANGE MOUNT

175 Cel

SILICON

650 V

UPPER

R-XUFM-X33

ISOLATED

230 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.