NO Insulated Gate Bipolar Transistors (IGBT) 1,397

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FP35R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP50R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP75R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FZ400R12KS4PHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

510 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

590 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

F4100R06KL4BOSA1

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

130 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

4

180 ns

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

36 ns

F4200R06KL4BOSA1

Infineon Technologies

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

225 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

4

330 ns

26

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X26

ISOLATED

230 ns

FP10R12YT3B4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

16 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

540 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

70 ns

FS15R06XL4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

135 ns

16

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X16

ISOLATED

29 ns

DDB6U180N16RRB11BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE

NO

140 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

26

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

DF900R12IP4DVBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL APPROVED

FS450R17OE4PBOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

1100 ns

29

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

UL RECOGNIZED

FS500R17OE4DBOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

740 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

1080 ns

29

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

330 ns

UL RECOGNIZED

FS75R12KE3B9BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

610 ns

26

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

DDB6U134N16RRB11BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

F3L300R12MT4PB22BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

11

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

F3L300R12MT4PB23BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

450 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

590 ns

11

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

280 ns

FD200R12KE3PHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

UL RECOGNIZED

FD800R45KL3KB5NPSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

7350 ns

9

FLANGE MOUNT

SILICON

4500 V

-50 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FD900R12IP4DVBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL RECOGNIZED

FF1200R12IE5PBPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

680 ns

10

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

430 ns

FF225R12ME4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

600 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

FF225R17ME4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

340 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1500 ns

11

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

FF300R12ME4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

720 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

240 ns

FF300R17ME4PB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

1520 ns

11

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

405 ns

FF450R12ME4EB11BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

675 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

740 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

290 ns

FF450R12ME4PB11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

675 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

740 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

290 ns

FF450R17ME4PB11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1600 ns

11

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

FF600R12ME4B72BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

995 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

770 ns

7

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

FF600R12ME4B73BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

995 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

770 ns

7

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

FF600R12ME4PB11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

770 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

310 ns

FF600R17ME4PB11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

950 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

980 ns

11

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

320 ns

FP10R12W1T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP15R12W1T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

510 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

130 ns

FP25R12W2T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

FP35R12W2T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

54 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

510 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP75R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP75R17N3E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

125 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FS50R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

FZ1200R12HE4PHPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1825 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

1130 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

660 ns

FZ2400R12HE4PB9HPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1320 ns

9

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

880 ns

F3L300R07PE4PBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

600 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FS200R12PT4PBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

IGW50N60TPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

FAST SWITCHING

TO-247AC

e3

60 ns

F3L100R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

465 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

175 ns

UL APPROVED

F3L150R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

510 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL APPROVED

F3L200R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

480 ns

32

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

F475R07W2H3B51BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

300 ns

28

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X28

ISOLATED

45 ns

UL APPROVED

IKW40N60DTPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

67 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

49 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.