NO Insulated Gate Bipolar Transistors (IGBT) 1,397

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

F3L225R07W2H3PB63BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.65 V

UNSPECIFIED

RECTANGULAR

4

110 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

170 ns

F3L25R12W1T4B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

54 ns

UL APPROVED

F4200R17N3E4BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

1160 ns

30

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

F575R06KE3B5BOSA1

Infineon Technologies

N-Channel

COMPLEX

NO

250 W

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

270 ns

35

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FF1500R12IE5BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

720 ns

14

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-PUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

460 ns

FF1500R17IP5BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

970 ns

14

FLANGE MOUNT

175 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-PUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

480 ns

CM225DX-24T

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1470 W

225 A

PLASTIC/EPOXY

POWER CONTROL

200 ns

2 V

UNSPECIFIED

RECTANGULAR

2

400 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

800 ns

-40 Cel

20 V

1200 ns

6.6 V

UPPER

R-PUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

A2P75S12M3-F

STMicroelectronics

N-CHANNEL

COMPLEX

NO

454.4 W

75 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

517 ns

33

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

235 ns

A2P75S12M3

STMicroelectronics

N-CHANNEL

BRIDGE, 6 ELEMENTS

NO

454.5 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

517 ns

33

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

235 ns

FS400R07A1E3S7BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

500 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

6

540 ns

25

FLANGE MOUNT

150 Cel

SILICON

705 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X25

1

ISOLATED

220 ns

FS400R07A3E3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC

NO

1250 W

500 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

6

430 ns

29

FLANGE MOUNT

150 Cel

SILICON

705 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X29

1

ISOLATED

200 ns

AIGW40N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

30 ns

AEC-Q101

AIKW40N65DF5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

30 ns

AEC-Q101

IKFW50N60DH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

145 W

53 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

268 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

58 ns

IKFW60N60EH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

164 W

64 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

282 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

63 ns

IKFW90N60EH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

77 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

312 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

76 ns

STGP8M120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

356 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

28.8 ns

VS-GT100DA120UF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

187 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

490 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

208 ns

UL APPROVED

VS-GT80DA120U

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

658 W

139 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

436 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-PUFM-X4

ISOLATED

199 ns

UL RECOGNIZED

NXH80T120L2Q0P2G

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

NXH80T120L2Q0S2TG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

DGTD65T40S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

341 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

112 ns

MIL-STD-202

NXH160T120L2Q2F2S1G

Onsemi

N-CHANNEL

COMPLEX

NO

500 W

181 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

4

435 ns

56

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X56

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

RGW60TK65GVC11

ROHM

N-CHANNEL

SINGLE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

209 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

50 ns

DGTD65T40S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

162 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

48 ns

STGWA40HP65FB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGWA40IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

2 V

THROUGH-HOLE

RECTANGULAR

1

263 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGWA40H60DLFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

FGHL50T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

FGY60T120SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

517 W

120 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.95 V

THROUGH-HOLE

RECTANGULAR

1

468 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

25 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SPEED SWITCHING

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

112 ns

FGY75T120SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

790 W

150 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

452 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

136 ns

NXH35C120L2C2SG

Onsemi

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

35 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

7

485 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-PDIP-T26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

240 ns

NXH80T120L3Q0S3G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

RGTVX6TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

144 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

298 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

IXYH40N120C4

Littelfuse

N-CHANNEL

SINGLE

NO

680 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

63 ns

STGWA40H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

158 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

34 ns

NXH240B120H3Q1PG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

68 A

UNSPECIFIED

MOTOR CONTROL

2 V

UNSPECIFIED

RECTANGULAR

3

337 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

UPPER

R-XUFM-X32

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

54 ns

FGHL40S65UQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

231 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.7 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

58 ns

STGWA40H65DHFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

183 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

24.6 ns

RGS50TSX2DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

AEC-Q101

RGS80TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

555 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

629 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

89 ns

AEC-Q101

STGWA30HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

169 ns

NXH100B120H3Q0PG

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

186 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

291 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

61 ns

IKFW50N65DH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

124 W

59 A

PLASTIC/EPOXY

POWER CONTROL

2.25 V

THROUGH-HOLE

RECTANGULAR

1

177 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

57 ns

STGWA40HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

169 ns

STGWA60V60DWFAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

55 ns

AEC-Q101

FGAF30S65AQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

60 A

PLASTIC/EPOXY

SWITCHING

2.1 V

THROUGH-HOLE

RECTANGULAR

1

166 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

e3

NOT SPECIFIED

NOT SPECIFIED

30 ns

FGHL40T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

POWER AMPLIFIER

1.8 V

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

52 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.