NO Insulated Gate Bipolar Transistors (IGBT) 1,397

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKW50N60DTPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

332 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

55 ns

IGW40N60TPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

67 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

49 ns

IHW20N135R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IHW25N120E1XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1677 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IKQ75N120CT2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

938 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

372 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

86 ns

IRG4PC50FD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

660 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

ULTRA FAST SOFT RECOVERY

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

86 ns

IKQ40N120CT2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

530 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

74 ns

IKQ50N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

466 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

68 ns

IKY50N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

462 ns

4

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

e3

62 ns

F3L400R12PT4PB26BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

610 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL RECOGNIZED

FF900R12IE4VPBOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

940 ns

10

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

350 ns

UL APPROVED

FP150R12KT4B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

FP150R12KT4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

FP150R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

FP150R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

FP75R17N3E4B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL RECOGNIZED

FS225R12OE4PBOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

570 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

230 ns

UL RECOGNIZED

FS300R12OE4PNOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

650 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

280 ns

UL RECOGNIZED

FS500R17OE4DPBOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

1080 ns

29

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

330 ns

UL RECOGNIZED

FZ1200R12HE4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1825 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1130 ns

7

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X7

1

ISOLATED

660 ns

UL APPROVED

FZ1200R17HE4HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

7800 W

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

1760 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

955 ns

UL APPROVED

IKW50N60TAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

60 ns

AEC-Q101

IKW50N65F5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

35 ns

AEC-Q101

IKW50N65H5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

213 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

33 ns

AEC-Q101

FF1200R17IP5BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

970 ns

10

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

460 ns

FF1800R17IP5PBPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1060 ns

14

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-PUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

530 ns

IKA08N65ET6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

147 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

30 ns

IKZ50N65NH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

313 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

30 ns

IKA15N65ET6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

50 ns

IKA15N65ET6XKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

50 ns

IKQ40N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

444 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

76 ns

IKY40N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

439 ns

4

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

TO-247

e3

61 ns

IKY75N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

468 ns

4

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

TO-247

e3

73 ns

IKZ75N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

475 ns

4

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

70 ns

AUIRGPS4070D0

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

SILICON

600 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AA

NOT SPECIFIED

NOT SPECIFIED

150 ns

AEC-Q101

DDB6U180N16RRB37BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

29

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X29

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

DDB6U180N16RRPB37BPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

620 ns

24

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

DF160R12W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

375 ns

30

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

DF200R12W1H3FB11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

27 ns

DF75R12W1H4FB11BOMA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

500 ns

17

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X17

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

58 ns

DF80R12W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

375 ns

22

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

IFS200B12N3E4B31BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

528 ns

41

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X41

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL RECOGNIZED

STGW60H65DFB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

329 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

91 ns

DF200R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

475 ns

18

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

IFS150B17N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

760 ns

37

FLANGE MOUNT

SILICON

1700 V

-40 Cel

UPPER

R-XUFM-X37

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

F3L75R12W1H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

F3L75R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

F450R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

203 ns

20

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.