NO Insulated Gate Bipolar Transistors (IGBT) 1,397

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
DGTD120T25S1PT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	348 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		367 ns	3	FLANGE MOUNT	175 Cel	SILICON	1200 V		-40 Cel	20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3				TO-247	e3		260	110 ns
NXH35C120L2C2S1G	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		35 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	6		485 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED						240 ns
NXH450B100H4Q2F2PG	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	234 W	101 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		224 ns	56	FLANGE MOUNT	150 Cel	SILICON	1000 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X56		ISOLATED						42 ns
NXH450B100H4Q2F2SG	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	234 W	101 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		224 ns	56	FLANGE MOUNT	150 Cel	SILICON	1000 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X56		ISOLATED						42 ns
NXH350N100H4Q2F2SG	Onsemi	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	592 W	329 A	UNSPECIFIED	POWER CONTROL		1.8 V	UNSPECIFIED	RECTANGULAR	2		572.5 ns	42	FLANGE MOUNT	125 Cel	SILICON	1000 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X42		ISOLATED						114 ns
NXH200T120H3Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	679 W	256 A	UNSPECIFIED	POWER CONTROL	102 ns	2.3 V	UNSPECIFIED	RECTANGULAR	4	99 ns	1096 ns	56	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X56		ISOLATED						373 ns
NXH35C120L2C2ESG	Onsemi	N-CHANNEL	COMPLEX	NO		35 A	UNSPECIFIED	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	6		485 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-XDIP-T26								240 ns
NXH50C120L2C2ESG	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	7		616 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED						248 ns
NXH100T120L3Q0S1NG	Onsemi	N-CHANNEL	COMPLEX	NO	328 W	100 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		412 ns	20	FLANGE MOUNT	175 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20								93 ns
NXH25C120L2C2SG	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	7		320 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED						128 ns
SNXH75M65L3F2STG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	236 W	75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.2 V	PIN/PEG	RECTANGULAR	1		432 ns	32	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	25 V		6.8 V		UPPER	R-PUFM-P32		ISOLATED	LOW SWITCHING LOSSES					129 ns
STGWA50H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	272 W	86 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		225 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				41 ns
STGWA50HP65FB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	272 W	86 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		225 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247
STGWA75H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	115 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		210 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				44 ns
FGH75T65UPD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL	56 ns	2.3 V	THROUGH-HOLE	RECTANGULAR	1	33 ns	197 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	98 ns	-55 Cel	20 V	249 ns	7.5 V		SINGLE	R-PSFM-T3			RC-IGBT	TO-247				87 ns
AFGY160T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3				TO-247					AEC-Q101
NXH450N65L4Q2F2SG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	633 W	280 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		978 ns	40	FLANGE MOUNT	125 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X40		ISOLATED						192 ns
NXH450N65L4Q2F2PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	633 W	280 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		978 ns	36	FLANGE MOUNT	125 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X36		ISOLATED						192 ns
NXH50M65L4Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	86 W	48 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		130 ns	27	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X27		ISOLATED						39 ns
AFGY120T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.2 V		SINGLE	R-PSFM-T3			RC-IGBT	TO-247				183 ns	AEC-Q101
STGF30H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		ISOLATED		TO-220AB				27.5 ns
STGP20H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	147 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		178 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				26 ns
STGWA20HP65FB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	147 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		178 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247
STGP20H65FB2	STMicroelectronics	N-CHANNEL	SINGLE	NO	147 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		178 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				26 ns
STGWA30H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				27.5 ns
STGP30H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				27.5 ns
RGS30TSX2HRC11	ROHM	N-CHANNEL	SINGLE	NO	267 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		189 ns	3	FLANGE MOUNT	175 Cel	SILICON	1200 V		-40 Cel	30 V		7 V	TIN	SINGLE	R-PSFM-T3				TO-247	e3			39 ns	AEC-Q101
STGWA20IH65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	159 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247
STGWA30IH65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		312 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247		NOT SPECIFIED	NOT SPECIFIED
STGW75H65DFB2-4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	357 W	115 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		231 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T4		COLLECTOR		TO-247				42 ns
STGW50H65DFB2-4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	272 W	86 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T4		COLLECTOR		TO-247				34 ns
NXH300B100H4Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT	175 Cel	SILICON	1000 V		-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59		ISOLATED						110.42 ns
NXH300B100H4Q2F2PG	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT	175 Cel	SILICON	1000 V		-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59		ISOLATED						110.42 ns
STGW100H65FB2-4	STMicroelectronics	N-CHANNEL	SINGLE	NO	441 W	145 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		255 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T4		COLLECTOR		TO-247				49 ns
STGI25N36LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	NO	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	THROUGH-HOLE	RECTANGULAR	1		14500 ns	3	IN-LINE	175 Cel	SILICON	385 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSIP-T3		COLLECTOR						4560 ns	AEC-Q101
RGW80TS65CHRC11	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	214 W	81 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		185 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-40 Cel	30 V		7 V		SINGLE	R-PSFM-T3				TO-247				54 ns	AEC-Q101
AFGHL40T65RQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	288 W	46 A	PLASTIC/EPOXY	POWER CONTROL		1.82 V	THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.05 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR		TO-247	e3	30	260	74 ns
NXH75M65L4Q1PTG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V	MATTE TIN	UPPER	R-XUFM-X27		ISOLATED			e3			72 ns
NXH75M65L4Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X27		ISOLATED						72 ns
STGP20IH65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	159 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		159 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB
VS-GT55LA120UX	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	291 W	68 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1		260 ns	4	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel	20 V		7.6 V		UPPER	R-PUFM-X4		ISOLATED						19 ns	UL RECOGNIZED
VS-GT90DA120U	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	781 W	169 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	1		270 ns	4	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel	20 V		7.6 V		UPPER	R-PUFM-X4		ISOLATED						61 ns	UL APPROVED
STGP30IH65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		233 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	30 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB
FGHL75T65LQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	469 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		660 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T4				TO-247	e3			60 ns
STGYA75H120DF2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1		406 ns	3	FLANGE MOUNT	175 Cel	SILICON	1200 V		-55 Cel	20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			e3			95 ns
FS75R12KT4B15BPSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	385 W	75 A	UNSPECIFIED	POWER CONTROL		2.15 V	UNSPECIFIED	RECTANGULAR	6		490 ns	28	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel			6.4 V		UPPER	R-XUFM-X28		ISOLATED						185 ns	UL APPROVED
IXYH85N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	1150 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		317 ns	3	FLANGE MOUNT	175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-247				95 ns
IXYX110N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	1360 W	310 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		357 ns	3	FLANGE MOUNT	175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR						88 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.