Insulated Gate Bipolar Transistors (IGBT)

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGP8M120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

356 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

28.8 ns

VS-GT100DA120UF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

187 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

490 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

208 ns

UL APPROVED

VS-GT80DA120U

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

658 W

139 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

436 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

UPPER

R-PUFM-X4

ISOLATED

199 ns

UL RECOGNIZED

NXH80T120L2Q0P2G

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

NXH80T120L2Q0S2TG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

67 A

UNSPECIFIED

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

4

293 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

88 ns

DGTD65T40S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

341 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

112 ns

MIL-STD-202

NXH160T120L2Q2F2S1G

Onsemi

N-CHANNEL

COMPLEX

NO

500 W

181 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

4

435 ns

56

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X56

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

150 ns

RGW60TK65GVC11

ROHM

N-CHANNEL

SINGLE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

209 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

50 ns

DGTD65T40S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

162 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

48 ns

PCFG40T65SQF

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

STGWA40HP65FB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGWA40IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

2 V

THROUGH-HOLE

RECTANGULAR

1

263 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGWA40H60DLFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

FGHL50T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

FGY60T120SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

517 W

120 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.95 V

THROUGH-HOLE

RECTANGULAR

1

468 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

25 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SPEED SWITCHING

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

112 ns

FGY75T120SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

790 W

150 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

452 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

136 ns

PCFG75T65MQF

Onsemi

N-CHANNEL

YES

150 A

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

UPPER

R-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

NXH35C120L2C2SG

Onsemi

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

35 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

7

485 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-PDIP-T26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

240 ns

NXH80T120L3Q0S3G

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

188 W

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

750 ns

20

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

98 ns

NXH25T120L2Q1PG

Onsemi

N-CHANNEL

COMPLEX

YES

81 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

12

551 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

77 ns

NXH25T120L2Q1PTG

Onsemi

N-CHANNEL

COMPLEX

YES

81 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

12

551 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

77 ns

RGTVX6TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

144 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

298 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

IXYH40N120C4

Littelfuse

N-CHANNEL

SINGLE

NO

680 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

63 ns

STGB19N40LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

GULL WING

RECTANGULAR

1

22200 ns

2

SMALL OUTLINE

175 Cel

SILICON

425 V

-55 Cel

16 V

2.6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

BULK: 1000

TO-263AB

e3

245

4450 ns

STGWA40H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

158 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

34 ns

NXH240B120H3Q1PG

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

68 A

UNSPECIFIED

MOTOR CONTROL

2 V

UNSPECIFIED

RECTANGULAR

3

337 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

UPPER

R-XUFM-X32

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

54 ns

FGD3440G2-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

166 W

26.9 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7 ns

1.75 V

GULL WING

RECTANGULAR

1

15 ns

7.6 ns

2

SMALL OUTLINE

175 Cel

SILICON

40 V

11 ns

-40 Cel

14 V

26 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

3 ns

FGHL40S65UQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

231 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.7 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

58 ns

STGWA40H65DHFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

183 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

24.6 ns

RGS50TSX2DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

AEC-Q101

RGS80TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

555 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

629 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

89 ns

AEC-Q101

STGWA30HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

169 ns

NXH100B120H3Q0PG

Onsemi

N-CHANNEL

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

186 W

50 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

291 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

RC-IGBT

NOT SPECIFIED

NOT SPECIFIED

61 ns

IKFW50N65DH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

124 W

59 A

PLASTIC/EPOXY

POWER CONTROL

2.25 V

THROUGH-HOLE

RECTANGULAR

1

177 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

57 ns

STGWA40HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

169 ns

STGWA60V60DWFAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

55 ns

AEC-Q101

FGAF30S65AQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

60 A

PLASTIC/EPOXY

SWITCHING

2.1 V

THROUGH-HOLE

RECTANGULAR

1

166 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

e3

NOT SPECIFIED

NOT SPECIFIED

30 ns

FGHL40T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

POWER AMPLIFIER

1.8 V

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

52 ns

FGHL50T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FGHL75T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

92 ns

NVG800A75L4DSC

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE

YES

800 A

UNSPECIFIED

POWER CONTROL

1.55 V

UNSPECIFIED

RECTANGULAR

2

855 ns

15

MICROELECTRONIC ASSEMBLY

175 Cel

SILICON

750 V

-40 Cel

20 V

6.2 V

UNSPECIFIED

R-XXMA-X15

347 ns

NXH40T120L3Q1PG

Onsemi

N-CHANNEL

COMPLEX

NO

146 W

42 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

12

305 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

83 ns

NXH40T120L3Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

146 W

42 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

12

305 ns

44

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X44

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

83 ns

NVH820S75L4SPB

Onsemi

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 W

820 A

UNSPECIFIED

POWER CONTROL

1.55 V

UNSPECIFIED

RECTANGULAR

6

1354 ns

33

FLANGE MOUNT

175 Cel

SILICON

750 V

-40 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

UPPER

R-XUFM-X33

ISOLATED

e3

454 ns

GT15J341,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

180 ns

GT30J341,Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

59 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

250 ns

GT50J341,Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

270 ns

FD1000R33HE3KB60BPSA1

Infineon Technologies

N-Channel

11500 W

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.