Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

6MS10017E41W36460BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS16017P43W40382NOSA1

Infineon Technologies

N-Channel

125 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

6MS16017P43W40383NOSA1

Infineon Technologies

N-Channel

125 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W39872NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W39873NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W41646NOSA1

Infineon Technologies

N-Channel

COMPLEX

YES

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

NOT SPECIFIED

NOT SPECIFIED

6MS30017E43W34404NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS30017E43W40372NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6PS18012E4FG38393NWSA1

Infineon Technologies

N-Channel

150 Cel

SILICON

1200 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

IFF2400P17AE4BPSA1

Infineon Technologies

N-Channel

2.3 V

150 Cel

SILICON

1700 V

-40 Cel

1

ISOLATED

IFF2400P17LE4BPSA1

Infineon Technologies

N-Channel

2.3 V

150 Cel

SILICON

1700 V

-40 Cel

1

ISOLATED

FS820R08A6P2BBPSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

714 W

820 A

UNSPECIFIED

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

6

1110 ns

33

FLANGE MOUNT

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

380 ns

AFGHL50T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

RGS60TS65DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

223 W

56 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

290 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

46 ns

AEC-Q101

SIGC28T60EX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.85 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IEC-62258-3

SIGC84T120R3LEX1SA7

Infineon Technologies

N-Channel

2.1 V

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

FGHL50T65SQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

159 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

40.4 ns

AFGB30T65SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

78.7 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

30 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263

e3

30

260

33.6 ns

AEC-Q101

FGAF40S65AQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.1 V

THROUGH-HOLE

RECTANGULAR

1

90.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

30.3 ns

NXH160T120L2Q1SG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR

NO

280 W

140 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

4

30

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.9 V

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

DGTD65T50S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

399 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.2 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

117 ns

DGTD65T60S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

HIGH SPEED SWITCHING

TO-247

e3

260

83 ns

FGH60T65SQD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

126.2 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

36.8 ns

FGH40T120SQDNL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

160 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

372 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

80 ns

SNXH100M95H3Q2F2PG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

457 W

263 A

UNSPECIFIED

POWER CONTROL

77 ns

2.25 V

UNSPECIFIED

RECTANGULAR

6

264 ns

1665 ns

40

FLANGE MOUNT

150 Cel

SILICON

950 V

-40 Cel

20 V

5.7 V

UPPER

R-XUFM-X40

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

306 ns

FPF2G75FH07BP

Onsemi

N-CHANNEL

COMPLEX

NO

236 W

75 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

6

462 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

25 V

6.8 V

UPPER

R-XUFM-X32

LOW CONDUCTION LOSS

124 ns

DGTD120T40S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

387 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

132 ns

DGTD120T25S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

348 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

367 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

110 ns

NXH35C120L2C2S1G

Onsemi

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

35 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

6

485 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-PDIP-T26

ISOLATED

240 ns

NXH450B100H4Q2F2PG

Onsemi

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

234 W

101 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

224 ns

56

FLANGE MOUNT

150 Cel

SILICON

1000 V

-40 Cel

20 V

5.7 V

UPPER

R-XUFM-X56

ISOLATED

42 ns

NXH450B100H4Q2F2SG

Onsemi

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

234 W

101 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

224 ns

56

FLANGE MOUNT

150 Cel

SILICON

1000 V

-40 Cel

20 V

5.7 V

UPPER

R-XUFM-X56

ISOLATED

42 ns

NXH350N100H4Q2F2SG

Onsemi

N-CHANNEL

2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

592 W

329 A

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

2

572.5 ns

42

FLANGE MOUNT

125 Cel

SILICON

1000 V

-40 Cel

20 V

5.7 V

UPPER

R-XUFM-X42

ISOLATED

114 ns

NXH200T120H3Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

679 W

256 A

UNSPECIFIED

POWER CONTROL

102 ns

2.3 V

UNSPECIFIED

RECTANGULAR

4

99 ns

1096 ns

56

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X56

ISOLATED

373 ns

NXH35C120L2C2ESG

Onsemi

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

6

485 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-XDIP-T26

240 ns

NXH50C120L2C2ESG

Onsemi

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

7

616 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-PDIP-T26

ISOLATED

248 ns

NCG225L75NF8M1

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

1.75 V

NO LEAD

SQUARE

1

424 ns

2

UNCASED CHIP

175 Cel

SILICON

750 V

-40 Cel

20 V

7.2 V

UPPER

S-XUUC-N2

468 ns

AEC-Q101

NXH100T120L3Q0S1NG

Onsemi

N-CHANNEL

COMPLEX

NO

328 W

100 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

4

412 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

93 ns

NXH25C120L2C2SG

Onsemi

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

7

320 ns

26

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.8 V

DUAL

R-PDIP-T26

ISOLATED

128 ns

SNXH75M65L3F2STG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

NO

236 W

75 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.2 V

PIN/PEG

RECTANGULAR

1

432 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

25 V

6.8 V

UPPER

R-PUFM-P32

ISOLATED

LOW SWITCHING LOSSES

129 ns

STGWA50H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

41 ns

STGWA50HP65FB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

STGB50H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

YES

272 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

225 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

41 ns

STGWA75H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

115 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

44 ns

FGH75T65UPD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

2.3 V

THROUGH-HOLE

RECTANGULAR

1

33 ns

197 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

98 ns

-55 Cel

20 V

249 ns

7.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

87 ns

LGD15N41ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

17000 ns

-55 Cel

15 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

9500 ns

AEC-Q101

LGB15N41ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

107 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

15500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

17000 ns

-55 Cel

15 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

9500 ns

AEC-Q101

AFGY160T65SPD-B4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

882 W

240 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.3 V

SINGLE

R-PSFM-T3

TO-247

AEC-Q101

LGD18N45TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

9000 ns

2.85 V

GULL WING

RECTANGULAR

1

7000 ns

5400 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

10400 ns

-55 Cel

18 V

19000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

2920 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.