Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

LGB8204ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

LGD8201ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

LGB8207TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

LGD18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

115 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

1.9 V

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

NXH450N65L4Q2F2SG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

633 W

280 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

978 ns

40

FLANGE MOUNT

125 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X40

ISOLATED

192 ns

NXH450N65L4Q2F2PG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

633 W

280 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

978 ns

36

FLANGE MOUNT

125 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X36

ISOLATED

192 ns

NXH50M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

86 W

48 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

130 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

39 ns

AFGY120T65SPD-B4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

882 W

240 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.2 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

183 ns

AEC-Q101

IXYT55N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

650 W

175 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

910 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

53 ns

STGF30H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

184 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

27.5 ns

STGP20H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

26 ns

STGWA20HP65FB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

STGB20H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

YES

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

178 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

26 ns

STGP20H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

26 ns

IXYT85N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

1150 W

300 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

990 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

73 ns

STGWA30H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

184 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

27.5 ns

STGB20H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

178 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

26 ns

LGB18N40ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

115 W

18 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

13000 ns

2

SMALL OUTLINE

175 Cel

SILICON

430 V

11000 ns

-55 Cel

18 V

25000 ns

SINGLE

R-PSSO-G2

COLLECTOR

5200 ns

AEC-Q101

LGB8245TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

6000 ns

GULL WING

RECTANGULAR

1

12000 ns

12500 ns

2

SMALL OUTLINE

175 Cel

SILICON

500 V

8000 ns

-55 Cel

15 V

20000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

4400 ns

AEC-Q101

STGP30H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

184 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

27.5 ns

RGS30TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

267 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

39 ns

AEC-Q101

STGWA20IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

159 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

STGWA30IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

312 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGW75H65DFB2-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

115 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

231 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

42 ns

STGW50H65DFB2-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

247 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

34 ns

NXH300B100H4Q2F2SG

Onsemi

N-CHANNEL

COMPLEX

NO

194 W

73 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

326 ns

59

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

5.9 V

UPPER

R-XUFM-X59

ISOLATED

110.42 ns

NXH300B100H4Q2F2PG

Onsemi

N-CHANNEL

COMPLEX

NO

194 W

73 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

326 ns

59

FLANGE MOUNT

175 Cel

SILICON

1000 V

-40 Cel

20 V

5.9 V

UPPER

R-XUFM-X59

ISOLATED

110.42 ns

IXYT40N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

600 W

140 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

1040 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

67 ns

STGW100H65FB2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

441 W

145 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

255 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

49 ns

STGB25N36LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

385 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

4560 ns

AEC-Q101

STGI25N36LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

NO

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

THROUGH-HOLE

RECTANGULAR

1

14500 ns

3

IN-LINE

175 Cel

SILICON

385 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSIP-T3

COLLECTOR

4560 ns

AEC-Q101

STGD25N36LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

385 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

4560 ns

AEC-Q101

LGB8202ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

24000 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

18500 ns

AEC-Q101

LGB8206ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

LGB8206ARI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

7000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

LGD8205ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

RGW80TS65CHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

81 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

185 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

SINGLE

R-PSFM-T3

TO-247

54 ns

AEC-Q101

AFGHL40T65RQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

46 A

PLASTIC/EPOXY

POWER CONTROL

1.82 V

THROUGH-HOLE

RECTANGULAR

1

149 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.05 V

MATTE TIN

SINGLE

R-PSFM-T3

1

COLLECTOR

TO-247

e3

30

260

74 ns

NXH75M65L4Q1PTG

Onsemi

N-CHANNEL

COMPLEX

NO

83 W

59 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

146 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

MATTE TIN

UPPER

R-XUFM-X27

ISOLATED

e3

72 ns

NXH75M65L4Q1SG

Onsemi

N-CHANNEL

COMPLEX

NO

83 W

59 A

UNSPECIFIED

POWER CONTROL

2.22 V

UNSPECIFIED

RECTANGULAR

6

146 ns

27

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

5.2 V

UPPER

R-XUFM-X27

ISOLATED

72 ns

LGB8207ATH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

165 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2000 ns

GULL WING

RECTANGULAR

1

15000 ns

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

2750 ns

-55 Cel

15 V

21000 ns

2 V

SINGLE

R-PSSO-G2

COLLECTOR

2450 ns

AEC-Q101

IXGA48N60C3-TRL

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

187 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

45 ns

STGP20IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

159 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

159 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

VS-GT55LA120UX

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

291 W

68 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

260 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7.6 V

UPPER

R-PUFM-X4

ISOLATED

19 ns

UL RECOGNIZED

VS-GT90DA120U

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

781 W

169 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

270 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

7.6 V

UPPER

R-PUFM-X4

ISOLATED

61 ns

UL APPROVED

LGD8209TI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

94 W

12 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

175 Cel

SILICON

445 V

-55 Cel

15 V

2 V

SINGLE

R-PSSO-G2

COLLECTOR

STGP30IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

233 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

FGHL75T65LQDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

469 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

660 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.