SINGLE Power Field Effect Transistors (FET) 527

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STH185N10F3-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

315 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH185N10F3-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

315 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH265N6F6-2AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH265N6F6-6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STI18N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

STL260N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE

YES

166 W

1

260 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

260 A

1

e3

260

STL62P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

100 W

1

62 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

62 A

NOT SPECIFIED

NOT SPECIFIED

STP13N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STP40N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

32 A

NOT SPECIFIED

NOT SPECIFIED

STU13N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STU7N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

STW10N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

130 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

STW48N60M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

NOT SPECIFIED

NOT SPECIFIED

STW48N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

42 A

e3

STW7N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

CSD19535KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

451 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0041 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

38 pF

STF12N50M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

85 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STH160N4LF6-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STL86N3LLH6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

30 V

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0076 ohm

80 A

NOT SPECIFIED

NOT SPECIFIED

STP160N4LF6

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STP265N6F6AG

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STW56N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

350 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

STW56N65M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

358 W

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

49 A

NOT SPECIFIED

NOT SPECIFIED

STW56N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

358 W

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

49 A

NOT SPECIFIED

NOT SPECIFIED

CSD18542KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

200 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

1.8

1

400 A

281 mJ

170 A

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

MATTE TIN

170 A

SINGLE

R-PSFM-T3

DRAIN

e3

14 pF

NVMFS5C460NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

NVMFS5C460NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

FDMS86380_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

75 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

16 mJ

50 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

31 ns

-55 Cel

30 ns

MATTE TIN

13.4 ohm

50 A

DUAL

R-PDSO-N5

1

DRAIN

AVALANCHE ENERGY RATED

e3

30

260

14 pF

AEC-Q101

CSD18535KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

616 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0029 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

31 pF

CSD18535KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

616 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0029 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

31 pF

CSD18536KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

819 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0022 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

51 pF

CSD18542KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

281 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0051 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

14 pF

CSD19505KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

510 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0038 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

34 pF

CSD19538Q3A

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

37 A

8.1 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.072 ohm

4.9 A

DUAL

R-PDSO-F5

1

DRAIN

AVALANCHE RATED

e3

30

260

16.4 pF

CSD18510KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

328 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0026 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

551 pF

CSD18511KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

e3

306 pF

CSD18511KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

CSD18511KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

NVMFS5C460NLWFAFT3G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

AOK42S60L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

417 W

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

39 A

NOT SPECIFIED

NOT SPECIFIED

AOT14N50FD

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

278 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

NOT SPECIFIED

NOT SPECIFIED

NP180N04TUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

348 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

DMT6009LJ3

Diodes Incorporated

N-CHANNEL

SINGLE

NO

83.3 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

39.8 mJ

74.5 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

2.9 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

74.5 A

SINGLE

R-PSIP-T3

1

TO-251

e3

41 pF

IGOT60R070D1AUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

31 A

20

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

TIN

.07 ohm

31 A

DUAL

R-PDSO-G20

3

e3

260

.3 pF

IGT60R070D1ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

60 A

31 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

.07 ohm

31 A

SINGLE

R-PSSO-F3

1

DRAIN

.3 pF

IGT60R190D1SATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

23 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

.19 ohm

12.5 A

SINGLE

R-PSSO-F3

1

DRAIN

.15 pF

SGT120R65AL

STMicroelectronics

N-CHANNEL

SINGLE

YES

192 W

PLASTIC/EPOXY

SWITCHING

650 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

36 A

8

SMALL OUTLINE

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-55 Cel

.12 ohm

15 A

DUAL

R-PDSO-F8

DRAIN

BULK: 3000

.9 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.