SINGLE Power Field Effect Transistors (FET) 527

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BF351

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

.05 A

BF352

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

.05 A

TS300

Tokin

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

2

DISK BUTTON

SILICON

.3 ohm

200 A

END

O-CEDB-N2

Not Qualified

IRLR024NTRR

International Rectifier

N-CHANNEL

SINGLE

YES

45 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

38 W

175 Cel

SILICON

TIN LEAD

.065 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e0

2382

Nte Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

CPH6445-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3.5 A

1

e6

30

260

NVMFS5833NT1G

Onsemi

N-CHANNEL

SINGLE

YES

112 W

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

86 A

1

e3

30

260

NVMFS5833NT3G

Onsemi

N-CHANNEL

SINGLE

YES

112 W

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

86 A

1

e3

30

260

NVMFS5833NWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

112 W

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

86 A

1

e3

30

260

NVMFS5833NWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

112 W

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

86 A

1

e3

30

260

NVMFS5C404NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

352 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

352 A

1

e3

30

260

NVMFS5C404NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

352 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

352 A

1

e3

30

260

NVMFS5C410NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

315 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

315 A

1

e3

30

260

NVMFS5C410NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

706 mJ

330 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0012 ohm

330 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

116 pF

AEC-Q101

NVMFS5C646NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

79 W

1

93 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

93 A

1

e3

30

260

NVMFS5C646NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

79 W

1

93 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

93 A

1

e3

30

260

NVMFS5C646NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

79 W

1

93 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

93 A

1

e3

30

260

NVMFS5C604NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

287 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

287 A

1

e3

30

260

NVMFS5C604NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

287 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

287 A

1

e3

30

260

STS9P2UH7

STMicroelectronics

P-CHANNEL

SINGLE

YES

2.7 W

1

9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

NOT SPECIFIED

NOT SPECIFIED

NTMFS5C404NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

339 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

339 A

1

e3

30

260

NVMFS5C612NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

235 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

235 A

1

e3

30

260

NVMFS5C612NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

235 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

235 A

1

e3

30

260

NVMFS5C612NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

235 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

235 A

1

e3

30

260

NTE2987

Nte Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

120 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

NOT SPECIFIED

NOT SPECIFIED

MTB3N60ET4

Onsemi

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

3 A

e0

235

STB12NM50ND

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

350 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STD12NM50ND

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

350 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.38 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

NTD24N06-1G

Onsemi

N-CHANNEL

SINGLE

YES

62.5 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

24 A

1

e3

260

FDD8444L

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

153 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

295 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0107 ohm

16 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

PD85035-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

8 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

PD85035S-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

8 A

DUAL

R-PDSO-F2

3

SOURCE

Not Qualified

e3

PD85035STR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

8 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PD85035TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

8 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN7002NE6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

1

260

SN7002WE6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

.23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.23 A

SN7002WE6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

.23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.23 A

1

260

BSS169E6906

Infineon Technologies

N-CHANNEL

SINGLE

YES

.36 W

DEPLETION MODE

1

.17 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.17 A

BUZ11_R4941

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn85Pb15)

30 A

e0

SPB21N10G

Infineon Technologies

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

21 A

IRF7413QTRPBF

International Rectifier

N-CHANNEL

SINGLE

YES

2.5 W

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

IRF540N_R4942

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

120 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

33 A

e0

NDS7002A_NB9GGTXA

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

2 ohm

.28 A

DUAL

R-PDSO-G3

TO-236AB

5 pF

FQPF5N60CYDTU

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

33 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

STF5NK52ZD

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

4.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STI12NM50N

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

11 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

STW90NF20

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

83 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

83 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

IRF7493TR

International Rectifier

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

9.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

9.3 A

1

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.