SINGLE Power Field Effect Transistors (FET) 527

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLC6G22LS-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

BLF1822-10,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.2 A

BLF2043,112

NXP Semiconductors

N-CHANNEL

SINGLE

1

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.2 A

BLF2043,135

NXP Semiconductors

N-CHANNEL

SINGLE

1

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.2 A

BLF3G22-30,135

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

BLF404,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.3 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

1.5 A

BUK7619-100B,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

200 W

ENHANCEMENT MODE

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

64 A

1

e3

30

245

BUK763R4-30B,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

PHD18NQ10T,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

18 A

SFT1443-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

19 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

9 A

1

e6

30

260

STP16N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

STU16N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

TK10A60W,S4VX

Toshiba

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

9.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.7 A

TK31N60W,S1VF

Toshiba

N-CHANNEL

SINGLE

NO

230 W

ENHANCEMENT MODE

1

30.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30.8 A

BUK7Y9R9-80E/CX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

195 W

ENHANCEMENT MODE

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

89 A

TK13E25D,S1X(S

Toshiba

N-CHANNEL

SINGLE

NO

102 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

TK16A60W5,S4VX

Toshiba

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

15.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15.8 A

TK100L60W,VQ

Toshiba

N-CHANNEL

SINGLE

NO

797 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

NDF08N50ZH

Onsemi

N-CHANNEL

SINGLE

NO

35 W

1

8.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.5 A

e3

STB27NM60ND

STMicroelectronics

N-CHANNEL

SINGLE

YES

160 W

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

21 A

1

e3

30

245

STB95N4F3

STMicroelectronics

N-CHANNEL

SINGLE

YES

110 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

80 A

1

e3

30

245

STW12NK60Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

10 A

e3

NVMFS5885NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

54 W

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

39 A

1

e3

30

260

STFI26NM60N

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

STH180N10F3-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

315 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NP60N04MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP89N055MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

147 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP89N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

147 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N055MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

SIJ482DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

69.4 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

UPA2813T1L-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

52 W

30 V

1

27 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.0062 ohm

27 A

e3

260

STFI13N95K3

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

1

10 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

STB31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STF31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STFI260N6F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

41.7 W

1

80 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

STW31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STF12NK80Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

1

10.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

10.5 A

e3

UPA2735GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

16 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

UPA2736GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

14 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

NOT SPECIFIED

NOT SPECIFIED

UPA2737GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

NOT SPECIFIED

NOT SPECIFIED

UPA2738GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

UPA2812T1L-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

52 W

30 V

1

30 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0048 ohm

30 A

NOT SPECIFIED

NOT SPECIFIED

UPA2820T1S-E2-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

16 W

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.