NO Power Field Effect Transistors (FET) 2,212

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SCT3160KLHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

103 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

17 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

TIN

.208 ohm

17 A

SINGLE

R-PSFM-T3

TO-247

e3

10

265

18 pF

AEC-Q101

NTH4L080N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

125 A

171 mJ

29 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

28 ns

-55 Cel

54 ns

Matte Tin (Sn) - annealed

.11 ohm

29 A

SINGLE

R-PSFM-T4

HIGH RELIABILITY

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

10 pF

FCH041N65EFLN4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

228 A

2025 mJ

76 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

180 ns

-55 Cel

394 ns

.041 ohm

76 A

SINGLE

R-PSFM-T4

TO-247

35 pF

FCHD040N65S3-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

358 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.04 ohm

65 A

SINGLE

R-PSFM-T3

TO-247AD

e3

NTHL033N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

175 A

1250 mJ

70 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.033 ohm

70 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

NTHL040N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

NTHL080N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

171 mJ

31 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

.11 ohm

31 A

SINGLE

R-PSFM-T3

TO-247

e3

6.5 pF

NVHL072N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

214 mJ

44 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.072 ohm

44 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NVHL082N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

510 mJ

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.082 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STWA40N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.088 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

2.4 pF

SCTW40N120G2VAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.105 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

e3

15 pF

AEC-Q101

NTH4L027N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

187.5 A

1610 mJ

75 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0274 ohm

75 A

SINGLE

R-PSFM-T4

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

SCT3080ARC14

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

.104 ohm

30 A

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

DMJ65H650SCTI

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

67.5 mJ

10 A

3

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.6 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

260

DMT6009LJ3

Diodes Incorporated

N-CHANNEL

SINGLE

NO

83.3 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

39.8 mJ

74.5 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

2.9 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

74.5 A

SINGLE

R-PSIP-T3

1

TO-251

e3

41 pF

NTHL020N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

503 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

472 A

264 mJ

118 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

.028 ohm

118 A

SINGLE

R-PSFM-T3

TO-247

e3

24 pF

NVHL020N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

503 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

472 A

264 mJ

118 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.028 ohm

118 A

SINGLE

R-PSFM-T3

1

TO-247

e3

30

260

24 pF

AEC-Q101

2SK3798(STA4,Q,M)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

345 mJ

4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

4 A

SINGLE

R-PSFM-T3

TK090A65Z,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

265 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

2 pF

TK25A20D,S5X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

118 mJ

25 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

25 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

21 pF

TK380A65Y,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

38.8 A

96 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

9.7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

2.5 pF

TK5A90E,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

202 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.1 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

30

260

8 pF

TK7A80W,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

310 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

6.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

1.2 pF

STP20N60M2-EP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

138 mJ

13 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.278 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPA65R190CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

57.2 A

484 mJ

17.5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.19 ohm

17.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPP65R110CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

277.8 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

31.2 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

TO-220AB

e3

IPP65R150CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195.3 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

614 mJ

22.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.15 ohm

22.4 A

SINGLE

R-PSFM-T3

TO-220AB

e3

IPW65R080CFDFKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

391 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

137 A

1160 mJ

43.3 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.08 ohm

43.3 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

DF11MR12W1M1B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

1200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

2

100 A

21

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

UPPER

R-XUFM-P21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FCP11N60N-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32.4 A

201.7 mJ

10.8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

65.4 ns

-55 Cel

124 ns

.299 ohm

10.8 A

SINGLE

R-PSFM-T3

TO-220AB

5 pF

FCP16N60N-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

134.4 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

355 mJ

16 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

82.6 ns

-55 Cel

181 ns

.199 ohm

16 A

SINGLE

R-PSFM-T3

TO-220AB

10 pF

FCP22N60N-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

205 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

672 mJ

22 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.165 ohm

22 A

SINGLE

R-PSFM-T3

TO-220AB

FCP9N60N-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83.3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

135 mJ

9 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

62.8 ns

-55 Cel

114.2 ns

.385 ohm

9 A

SINGLE

R-PSFM-T3

TO-220AB

FDP032N08-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

940 A

1995 mJ

235 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

862 ns

-55 Cel

932 ns

Matte Tin (Sn) - annealed

.0032 ohm

235 A

SINGLE

R-PSFM-T3

TO-220AB

e3

800 pF

FDP038AN06A0-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

625 mJ

17 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

175 ns

-55 Cel

115 ns

.0038 ohm

17 A

SINGLE

R-PSFM-T3

TO-220AB

FF8MR12W2M1B11BOMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

300 A

35

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

IPP60R105CFD7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

93 mJ

21 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.105 ohm

21 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPS65R1K0CEAKMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

50 mJ

7.2 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1 ohm

7.2 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPW80R290C3AFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

51 A

670 mJ

17 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.29 ohm

17 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FF45MR12W1M1B11BOMA1

Infineon Technologies

N-Channel

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

5.55 V

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

50 A

55300 ns

10

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

20 V

.045 ohm

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

14100 ns

14 pF

FF6MR12W2M1B11BOMA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

400 A

35

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

39.1 ns

-40 Cel

92.6 ns

.00563 ohm

200 A

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

112 pF

UL RECOGNIZED

IPA95R1K2P7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

11 mJ

6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.2 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NTH4L020N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

510 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

408 A

264 mJ

102 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

69 ns

-55 Cel

86 ns

Matte Tin (Sn) - annealed

.028 ohm

102 A

SINGLE

R-PSFM-T4

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

24 pF

NVHL060N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

162 mJ

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

106 ns

-55 Cel

94 ns

Matte Tin (Sn) - annealed

.084 ohm

46 A

SINGLE

R-PSFM-T3

1

TO-247

e3

30

260

11 pF

AEC-Q101

SCT3022KLGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

427 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

237 A

95 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

TIN

.0286 ohm

95 A

SINGLE

R-PSFM-T3

TO-247

e3

SCT3105KLGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

134 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

24 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

TIN

.137 ohm

24 A

SINGLE

R-PSFM-T3

TO-247

e3

FDP2D9N12C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.005 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

DMT4003SCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

215 mJ

205 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.003 ohm

205 A

SINGLE

R-PSFM-T3

TO-220AB

e3

260

21.4 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.