NO Power Field Effect Transistors (FET) 2,212

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDU5N60NZTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

216 mJ

4 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

90 ns

-55 Cel

130 ns

Matte Tin (Sn) - annealed

2 ohm

4 A

SINGLE

R-PSIP-T3

TO-251AA

e3

7.5 pF

FCH165N65S3R0-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

154 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

47.5 A

87 mJ

19 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.165 ohm

19 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FCH125N65S3R0-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

181 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

115 mJ

24 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.125 ohm

24 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

NXH40B120MNQ1SNG

Onsemi

N-CHANNEL

COMPLEX

NO

156 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

3

132 A

44 A

32

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

44 A

UPPER

R-XUFM-X32

ISOLATED

19 pF

NXH40B120MNQ0SNG

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

118 W

UNSPECIFIED

SWITCHING

1200 V

PIN/PEG

RECTANGULAR

DEPLETION MODE

2

114 A

38 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

Matte Tin (Sn) - annealed

.055 ohm

38 A

UPPER

R-XUFM-P22

ISOLATED

e3

19 pF

NXH80B120MNQ0SNG

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

NO

69 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

69 A

23 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

Matte Tin (Sn) - annealed

.11 ohm

23 A

UPPER

R-XUFM-X22

ISOLATED

e3

NXH027B120MNF2PTG

Onsemi

N-CHANNEL

COMPLEX

NO

134 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

DEPLETION MODE

3

84 A

23

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.038 ohm

84 A

UPPER

R-XUFM-X23

ISOLATED

64 pF

C3M0060065K

Wolfspeed

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.079 ohm

37 A

SINGLE

R-PSFM-T4

DRAIN

TO-247

9 pF

NVH4L060N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

269 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

232 A

50.3 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

50.3 A

SINGLE

R-PSFM-T4

TO-247

10.17 pF

NTH4L015N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

753 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

859 A

164 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

164 A

SINGLE

R-PSFM-T4

TO-247

e3

39.33 pF

NVH4L045N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

338 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

312 A

65.5 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

65.5 A

SINGLE

R-PSFM-T4

TO-247

e3

13.76 pF

NVH4L015N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

753 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

859 A

164 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

164 A

SINGLE

R-PSFM-T4

1

TO-247

e3

30

260

39.33 pF

CAS120M12BM2

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

480 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.016 ohm

UPPER

R-XUFM-X7

ISOLATED

43.8 pF

PSMN2R0-60PSRQ

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

338 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1135 A

913 mJ

120 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

147 ns

-55 Cel

247 ns

.0022 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

HIGH RELIABILITY

TO-220AB

835 pF

IEC-60134

FF6MR12KM1BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

102.8 ns

-40 Cel

167.9 ns

.00581 ohm

250 A

UPPER

R-XUFM-X7

ISOLATED

112 pF

UL RECOGNIZED

FF6MR12KM1PHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

102.8 ns

-40 Cel

167.9 ns

.00581 ohm

250 A

UPPER

R-XUFM-X7

ISOLATED

112 pF

UL RECOGNIZED

NVHL040N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

358 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

IXTP14N60X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

150 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.25 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

20 pF

CAB760M12HM3

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1530 A

9

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.00173 ohm

UPPER

R-XUFM-X9

ISOLATED

90 pF

MSCSM70VM19C3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR

NO

365 W

UNSPECIFIED

SWITCHING

700 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

250 A

124 A

25

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.019 ohm

124 A

UPPER

R-XUFM-X25

ISOLATED

29 pF

DMN68M7SCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

68 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

183 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.008 ohm

100 A

SINGLE

R-PSFM-T3

TO-220AB

e3

260

198 pF

MIL-STD-202

FCH029N65S3-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

463 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

503 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.029 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

SIHFPS43N50K-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

190 A

910 mJ

47 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

47 A

SINGLE

R-PSIP-T3

120 pF

NVH4L050N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

403 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

830 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.05 ohm

58 A

SINGLE

R-PSFM-T4

TO-247

e3

14 pF

AEC-Q101

NVH040N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

MSC017SMA120J

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

278 W

PLASTIC/EPOXY

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

280 A

3500 mJ

88 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.022 ohm

88 A

UPPER

R-PUFM-X4

ISOLATED

12 pF

MSC017SMA120B4

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

113 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.022 ohm

113 A

SINGLE

R-PSFM-T4

DRAIN

TO-247

12 pF

NTHL095N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

284 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.095 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NTHL067N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

266 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

422 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.067 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NVH4L110N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

380 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.11 ohm

30 A

SINGLE

R-PSFM-T4

TO-247

e3

7.5 pF

AEC-Q101

NTHL125N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

67 A

216 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.125 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

DMT10H9M9SH3

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

114 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

181.5 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.009 ohm

84 A

SINGLE

R-PSIP-T3

TO-251

e3

260

13 pF

MIL-STD-202

C3M0045065K

Wolfspeed

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.06 ohm

49 A

SINGLE

R-PSFM-T4

DRAIN

8 pF

C3M0025065K

Wolfspeed

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

326 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

251 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.034 ohm

97 A

SINGLE

R-PSFM-T4

DRAIN

12 pF

CAB011M12FM3

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

218 A

9

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.014 ohm

UPPER

R-XUFM-X9

ISOLATED

30 pF

SCTWA35N65G2V-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON CARBIDE

-55 Cel

.067 ohm

45 A

SINGLE

R-PSFM-T4

DRAIN

30 pF

SCTWA90N65G2V-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

565 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON CARBIDE

-55 Cel

.024 ohm

119 A

SINGLE

R-PSFM-T4

DRAIN

49 pF

CCB021M12FM3

Wolfspeed

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

106 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0279 ohm

UPPER

R-XUFM-X22

ISOLATED

16 pF

IEC-60747-8-4

NTH4LN067N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

266 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

422 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.067 ohm

40 A

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

NTH4L067N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

266 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

422 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.067 ohm

40 A

SINGLE

R-PSFM-T4

TO-247

e3

NTH4LN095N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

284 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.095 ohm

30 A

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

NTH4LN019N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

328 A

1421 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0193 ohm

75 A

SINGLE

R-PSFM-T4

TO-247

e3

CAB530M12BM3

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1060 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.00355 ohm

UPPER

R-XUFM-X7

ISOLATED

84 pF

TK35A65W5,S5X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

614 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

35 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

9 pF

TK32E12N1,S1X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

98 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

48 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0138 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

13 pF

C3M0075120D-A

Wolfspeed

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.09 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

2 pF

FS03MR12A6MA1LB

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

800 A

39

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0037 ohm

UPPER

R-XUFM-X39

ISOLATED

170 pF

NXH010P120MNF1PTNG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

342 A

18

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.014 ohm

114 A

UPPER

R-XUFM-X18

ISOLATED

39 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.