NXP Semiconductors Power Field Effect Transistors (FET) 358

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK7E4R3-75C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

333 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

e3

BUK9213-30A,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

55 A

1

e3

BUK9MGP-55PTS,518

NXP Semiconductors

N-CHANNEL

YES

5.2 W

ENHANCEMENT MODE

16.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16.9 A

3

30

260

BUK9MJJ-55PTT,518

NXP Semiconductors

N-CHANNEL

YES

4.5 W

ENHANCEMENT MODE

12.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12.9 A

3

30

260

PMN38EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.75 W

ENHANCEMENT MODE

1

5.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.4 A

1

e3

30

260

PMN49EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.75 W

ENHANCEMENT MODE

1

4.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4.6 A

1

e3

30

260

PSMN050-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

56 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

22 A

1

e3

BLF6G27LS-50BN,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

12 A

BLF6G27LS-50BN,118

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

12 A

BLF7G20L-200,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF7G22L-130,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

28 A

BLF7G27L-150P,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

37 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

225 Cel

37 A

BUK6240-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

22 A

PSMN011-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

49 W

ENHANCEMENT MODE

1

51 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

51 A

1

e3

30

260

PSMN8R0-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

56 W

ENHANCEMENT MODE

1

62 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

62 A

1

e3

30

260

PSMN3R7-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

97 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

97 A

1

e3

30

260

BLF7G22L-160,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

36 A

PSMN1R7-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

164 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN3R2-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN3R7-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BLF7G22L-100P,118

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

BLF7G22L-100P,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

PSMN5R9-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

63 W

ENHANCEMENT MODE

1

78 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

78 A

1

e3

30

260

PSMN5R6-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

61 A

PMT29EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

6 A

1

e3

30

260

PMT29EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

BUK653R3-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

NX3008NBKT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.35 A

1

e3

30

260

PMT21EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

7.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7.4 A

1

e3

30

260

PSMN7R0-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

57 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

PSMN9R0-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

34 W

ENHANCEMENT MODE

1

46 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

46 A

1

e3

30

260

BLF6G22L-40P,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

16 A

30

260

BLF6G22L-40P,118

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

16 A

30

260

PSMN016-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

46.1 W

ENHANCEMENT MODE

1

32.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32.1 A

PSMN010-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

39 A

1

e3

30

260

PSMN027-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

41.1 W

ENHANCEMENT MODE

1

23.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

23.4 A

PSMN013-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

48.4 W

ENHANCEMENT MODE

1

35.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

35.2 A

BLF7G27L-135,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

BLF7G27L-135,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

PSMN012-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

26 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

33 A

1

e3

30

260

PMV90EN,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

2.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

2.1 A

1

e3

30

260

BF1118R,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BF1118,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BF1118W,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BLP7G22-10,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

PMR290UNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.77 W

ENHANCEMENT MODE

1

.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.7 A

1

e3

30

260

BLP7G07S-140P,118

NXP Semiconductors

N-CHANNEL

YES

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PMZB790SN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.65 A

1

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.