.1 A Small Signal Bipolar Junction Transistors (BJT) 867

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR112F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

260

BCR142F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR114F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

1

260

BCR139F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

1

260

BCR139T-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR153F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR162F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR189F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR189T-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR164T-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR192F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR103F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR103T-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR183F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

260

EMD5DXV6T1G

Onsemi

NPN AND PNP

YES

.5 W

.1 A

2

BIP General Purpose Small Signal

20

SILICON

TIN

1

e3

260

FA4F4M-T1B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

TIN BISMUTH

e6

FN4L4M-T1B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

TIN BISMUTH

e6

BCR133F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

1

260

RN1314(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

50

SILICON

BCR185F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR135F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR169F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

120

SILICON

BCR191F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

50

BCR158F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR179F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

120

SILICON

RN1112(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN1309(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

RN2702(TE85L,F)

Toshiba

PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

50

SILICON

RN1961(TE85L,F)

Toshiba

NPN

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

30

SILICON

RN1962(TE85L,F)

Toshiba

NPN

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

50

SILICON

RN1965(TE85L,F)

Toshiba

NPN

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1303(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

RN1103MFV(TPL3)

Toshiba

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

RN1510(TE85L,F)

Toshiba

NPN

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN1601(TE85L,F)

Toshiba

NPN

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

30

SILICON

RN1606(TE85L,F)

Toshiba

NPN

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

30

260

RN1610(TE85L,F)

Toshiba

NPN

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN1704JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1708JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1709JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

30

260

RN1710JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN1901FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

30

SILICON

RN1908FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1909FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

RN1961FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

30

SILICON

RN1963FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

RN1965FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1967FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395