.1 A Small Signal Bipolar Junction Transistors (BJT) 867

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DCX114YUQ-13-F

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IATF 16949; MIL-STD-202

DCX114YUQ-13R-F

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 4.7

e3

30

260

AEC-Q101; IATF 16949; MIL-STD-202

DCX124EUQ-13-F

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IATF 16949; MIL-STD-202

DCX124EUQ-13R-F

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IATF 16949; MIL-STD-202

DDA114TUQ-13-F

Diodes Incorporated

PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

100

SILICON

MATTE TIN

1

e3

30

260

DDA114TUQ-7-F

Diodes Incorporated

PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

100

SILICON

MATTE TIN

1

e3

30

260

DDA143TUQ-13-F

Diodes Incorporated

PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

160

SILICON

MATTE TIN

1

e3

30

260

DDA143TUQ-7-F

Diodes Incorporated

PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

160

SILICON

MATTE TIN

1

e3

30

260

DDC114TUQ-7-F

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

e3

30

260

AEC-Q101

DDC114YUQ-7-F

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

68

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY

e3

30

260

AEC-Q101

DDC124EUQ-7-F

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

56

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT-IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY

e3

30

260

AEC-Q101

DDTC123ECAQ-7-F

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

e3

30

260

AEC-Q101

DDTC143TCAQ-13-F

Diodes Incorporated

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

MATTE TIN

1

e3

30

260

DDTC143TCAQ-7-F

Diodes Incorporated

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

MATTE TIN

1

e3

30

260

SMUN5315DW1T1G

Onsemi

NPN AND PNP

YES

.256 W

.1 A

2

BIP General Purpose Small Signal

160

SILICON

MATTE TIN

1

e3

30

260

NSVUMC5NT2G

Onsemi

NPN AND PNP

COMPLEX

YES

.15 W

.1 A

PLASTIC/EPOXY

.25 V

GULL WING

RECTANGULAR

2

5

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

-65 Cel

MATTE TIN

DUAL

R-PDSO-G5

1

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

AEC-Q101

NSVB143TPDXV6T1G

Onsemi

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

160

SILICON

50 V

DUAL

R-PDSO-F6

BUILT IN BIAS RESISTOR

AEC-Q101

NSVB144EPDXV6T1G

Onsemi

NPN AND PNP

YES

.5 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

SMUN5215T1G

Onsemi

NPN

YES

.31 W

.1 A

1

BIP General Purpose Small Signal

160

SILICON

MATTE TIN

1

e3

30

260

BC847C-TP-HF

Micro Commercial Components

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

1

e3

10

260

DTA123TET1G

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

160

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

e3

NOT SPECIFIED

NOT SPECIFIED

DTA144TET1G

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.3 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTOR

e3

NOT SPECIFIED

NOT SPECIFIED

MMUN2140LT1G

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTOR

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NSBC124XF3T5G

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.297 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signals

80

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-F3

1

BUILT IN BIAS RESISTANCE RATIO IS 2.14

e3

NOT SPECIFIED

NOT SPECIFIED

MUN5240T1G

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.31 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR

e3

NOT SPECIFIED

NOT SPECIFIED

BCR133WE6327HTSA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

40

260

BC846BWE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

65 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BC857BE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BC857CE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BC847BWE6433HTMA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

BC847CWE6433HTMA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

40

260

BC848AE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BC849BE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

BC849CWE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

40

260

BC850BE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

BC850BWE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

40

260

BC850CWE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

40

260

BC857CWE6433HTMA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

40

260

BC857SE6433HTMA1

Infineon Technologies

PNP

SEPARATE, 2 ELEMENTS

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

125

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G6

Not Qualified

e3

40

260

BC858BWE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

30 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

40

260

BC858CE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BC860BWE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

40

260

BC860CWE6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

40

260

BCR116E6433HTMA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

160 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

NOT SPECIFIED

NOT SPECIFIED

BCR135E6433HTMA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

NOT SPECIFIED

NOT SPECIFIED

BCR141E6433HTMA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

BCR142WE6327HTSA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

150 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1363

e3

40

260

BCR158E6327HTSA1

Infineon Technologies

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

200 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

e3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395