.1 A Small Signal Bipolar Junction Transistors (BJT) 867

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

RN1970FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN1971FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN1911FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2506(TE85L,F)

Toshiba

PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

30

260

RN2114(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

50

SILICON

RN2117(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

RN2304(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

80

SILICON

RN2307(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

80

SILICON

RN2309(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

RN2313(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN2310(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN2311(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN2317(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

RN2511(TE85L,F)

Toshiba

PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2704JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2705JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2706JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2708JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2607(TE85L,F)

Toshiba

PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2608(TE85L,F)

Toshiba

PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2711(TE85L,F)

Toshiba

PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2911FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2962FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

50

SILICON

RN2971FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN4609(TE85L,F)

Toshiba

NPN AND PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

RN4611(TE85L,F)

Toshiba

NPN AND PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2967FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2969FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

RN46A1(TE85L,F)

Toshiba

NPN AND PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signal

50

SILICON

RN4989(TE85L,F)

Toshiba

NPN AND PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

RN4988(TE85L,F)

Toshiba

NPN AND PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN4990(TE85L,F)

Toshiba

NPN AND PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN49A1FE(TE85L,F)

Toshiba

NPN AND PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN49A1(TE85L,F)

Toshiba

NPN AND PNP

YES

.2 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

GA1L4M-T2-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

RN4602(TE85L,F)

Toshiba

NPN AND PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signals

50

SILICON

RN1116(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signals

50

SILICON

RN1117(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signals

30

SILICON

RN1508(TE85L,F)

Toshiba

NPN

YES

.3 W

.1 A

1

BIP General Purpose Small Signals

80

SILICON

RN1970(TE85L,F)

Toshiba

NPN

YES

.2 W

.1 A

2

BIP General Purpose Small Signals

120

SILICON

RN1971(TE85L,F)

Toshiba

NPN

YES

.2 W

.1 A

2

BIP General Purpose Small Signals

120

SILICON

RN4610(TE85L,F)

Toshiba

NPN AND PNP

YES

.3 W

.1 A

2

BIP General Purpose Small Signals

120

SILICON

2SA1575E-TD-E

Onsemi

PNP

DARLINGTON

YES

400 MHz

1.3 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

.5 W

100

150 Cel

2.3 pF

SILICON

200 V

Tin/Bismuth (Sn/Bi)

SINGLE

R-PSSO-F3

1

COLLECTOR

e6

PDTA143ZK,135

NXP Semiconductors

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

80

BC847AQ-7-F

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.35 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

45 V

-65 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

e3

30

260

BC848CQ-7-F

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.35 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

420

150 Cel

SILICON

30 V

-65 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

e3

30

260

BC857BSQ-7-F

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

Other Transistors

220

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DCX114EUQ-13-F

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

BUILT IN BIAS RESISTANCE RATIO IS 1

e3

30

260

AEC-Q101; IATF 16949; MIL-STD-202

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395