SINGLE WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 581

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

AO3409

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.11 ohm

2.6 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 pF

AO3415

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

4 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.054 ohm

4 A

DUAL

R-PDSO-G3

Not Qualified

e3

30

260

110 pF

AO4406AL

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0115 ohm

13 A

DUAL

R-PDSO-G8

Not Qualified

100 pF

MCH3377-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.083 ohm

3 A

DUAL

R-PDSO-F3

1

e6

30

260

NTMFS4847NAT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0062 ohm

11.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

2SK3377-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.078 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

2SK3377-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.078 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

UPA1814GR-9JG-E1-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.027 ohm

7 A

DUAL

R-PDSO-G8

e6

MCH3474-TL-E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Bismuth (Sn/Bi)

.05 ohm

4 A

DUAL

R-PDSO-F3

1

e6

NTGS3443T2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.065 ohm

2.2 A

DUAL

R-PDSO-G6

1

ULTRA LOW RESISTANCE

e3

30

260

NTGS4111PT2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.06 ohm

2.6 A

DUAL

R-PDSO-G6

1

e3

30

260

PCP1403-TD-H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.5 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.117 ohm

4.5 A

SINGLE

R-PSSO-F3

1

DRAIN

TO-243AA

e6

30

260

2N6661JTXV02

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.25 W

METAL

SWITCHING

90 V

WIRE

ROUND

ENHANCEMENT MODE

1

.86 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.86 A

BOTTOM

O-MBCY-W3

DRAIN

Not Qualified

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

TO-205AD

NOT SPECIFIED

NOT SPECIFIED

10 pF

NTGD3147FT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.145 ohm

2.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTGD4169FT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.6 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.09 ohm

2.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTHD2110TT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.04 ohm

4.5 A

DUAL

R-PDSO-C8

1

Not Qualified

e3

30

260

NTMD4184PFR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.31 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.095 ohm

2.3 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

80 pF

NTMFS4846NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0051 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4847NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48.1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

85 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0062 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

NTMFS4849NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42.4 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0079 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTMS4176PR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.018 ohm

5.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTMS4872NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0135 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

200 pF

NTR3161NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.05 ohm

3.3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR3162PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.07 ohm

2.2 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR3162PT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.07 ohm

2.2 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR4170NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.055 ohm

3.2 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTR4171PT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.075 ohm

2.2 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

DMN55D0UT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.16 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4 ohm

.16 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

SI2334DS-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.9 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.044 ohm

4.9 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

SQ2309ES-T1_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.335 ohm

1.7 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

40

260

30 pF

FDS2672_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.07 ohm

3.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

45 pF

FDS6673BZ_F085

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0078 ohm

14.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

900 pF

NTMFS4921NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0108 ohm

.0088 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

DMG3415UFY4-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.49 W

PLASTIC/EPOXY

SWITCHING

16 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.039 ohm

2.5 A

DUAL

R-PDSO-N3

1

DRAIN

Not Qualified

e4

30

260

DMG4468LFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.99 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7.62 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.015 ohm

7.62 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e4

30

260

NTTFS4928NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

37 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0135 ohm

7.3 A

DUAL

S-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTGS3455T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.75 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.1 ohm

2.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

30

240

NTHS5402T1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.7 W

UNSPECIFIED

SWITCHING

30 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

4.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.035 ohm

4.9 A

DUAL

R-XDSO-C8

1

Not Qualified

e0

235

NTHS5443T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.7 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

3.6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.065 ohm

3.6 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTHS5445T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.7 W

UNSPECIFIED

SWITCHING

8 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.035 ohm

5.2 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTMS3P03R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.86 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

e0

NOT SPECIFIED

235

135 pF

NTMSD3P102R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.34 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

1

Not Qualified

e0

NOT SPECIFIED

235

135 pF

NTQS6463R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.67 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.02 ohm

5.5 A

DUAL

R-PDSO-G8

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e0

235

NTTS2P03R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

2.1 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.085 ohm

2.1 A

DUAL

S-PDSO-G8

1

Not Qualified

e0

235

BSS670S2L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.54 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.825 ohm

.54 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

10 pF

BSS84PW

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.15 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8 ohm

.15 A

DUAL

R-PDSO-G3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

3.8 pF

STN1NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.8 ohm

1 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

e3

RK7002AT116

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1.5 ohm

.3 A

DUAL

R-PDSO-G3

Not Qualified

e1

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.