SINGLE WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 581

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NTMFS4119NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

18 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0035 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

40

260

NTS2101PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.96 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.1 ohm

1.4 A

DUAL

R-PDSO-G3

Not Qualified

e0

NOT SPECIFIED

235

BS170RLRAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

40

260

NTTD4401FR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.42 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.09 ohm

2.4 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

175 pF

TP0202K-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.385 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

.385 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NTMFS4121NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

17 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.00525 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

40

260

NTMFS4701NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.008 ohm

7.7 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

e3

260

NTMFS4707NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.013 ohm

6.9 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

40

260

NTMS4706NR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.012 ohm

6.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e0

235

NTR2101PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.96 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.052 ohm

3.7 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

NTR1P02T3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.18 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

NTTS2P03R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.78 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

2.1 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.085 ohm

2.1 A

DUAL

S-PDSO-G8

1

Not Qualified

e3

30

260

BSS225

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.09 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

45 ohm

.09 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

4.4 pF

BSS84P-E6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.17 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

8 ohm

.17 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

40

260

3 pF

BS108ZL1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e1

260

10 pF

BS170RL1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-226AA

e1

260

BS170RLRMG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

260

BS170ZL1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-226AA

e1

40

260

NTMS3P03R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.86 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

e3

40

260

135 pF

NTMS4503NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

28 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.008 ohm

9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

NTMS4700NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

8.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

NTMS4N01R2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.77 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.04 ohm

3.3 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

e3

40

260

100 pF

NTMSD3P102R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.34 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

3

Not Qualified

e3

40

260

135 pF

NTMSD3P303R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.34 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

3

Not Qualified

e3

40

260

135 pF

VN2410LZL1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

10 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

20 pF

IPB80N06S3-07

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0065 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

245

IPI80N06S3-07

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0068 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED

TO-262AA

e3

260

IPP80N06S3-07

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0068 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED

TO-220AB

e3

NTS4101PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.329 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.37 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.12 ohm

1.37 A

DUAL

R-PDSO-G3

Not Qualified

e0

NOT SPECIFIED

NOT SPECIFIED

85 pF

NTZS3151PT5G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.15 ohm

.86 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

NTMS4107NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0045 ohm

11 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

SI2303BDS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.49 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.2 ohm

1.49 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

BSS192PE6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.19 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

12 ohm

.19 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

255

8 pF

AEC-Q101

DMN5L06-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.28 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

DMN5L06T-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.28 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW CAPACITANCE

e3

30

260

5 pF

DMN5L06W-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.28 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

RSF010P03TL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.35 ohm

1 A

DUAL

R-PDSO-F3

1

Not Qualified

e2

10

260

RTF015N03TL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.34 ohm

1.5 A

DUAL

R-PDSO-F3

1

Not Qualified

e2

10

260

SI4884BDY-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.45 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16.5 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.009 ohm

12.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

NTJS4160NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.06 ohm

1.8 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

NTMS4705NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.52 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.01 ohm

7.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTMS4706NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.012 ohm

6.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTGS3441PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.11 ohm

1.8 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTMSD3P102R2SG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.34 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

135 pF

BSS127E6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.021 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

600 ohm

.021 A

DUAL

R-PDSO-G3

1

Not Qualified

260

1.5 pF

BSS139E6906

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

250 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3.3 pF

NTVS3141PT2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

3.7 A

6

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

2.9 A

BOTTOM

R-PBGA-B6

1

Not Qualified

e3

DMN4027SSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.027 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.