| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
5 ohm |
.5 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e1 |
40 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Tin (Sn) |
5 ohm |
.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
40 |
260 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
5 ohm |
.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
40 |
260 |
5 pF |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
5 ohm |
.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
40 |
260 |
5 pF |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
5 ohm |
.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
40 |
260 |
5 pF |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9.6 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.0115 ohm |
7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e0 |
235 |
300 pF |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.95 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn80Pb20) |
.2 ohm |
1.95 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236AB |
e0 |
30 |
235 |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.95 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.2 ohm |
1.95 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e0 |
235 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.73 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.5 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.11 ohm |
1.5 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236AB |
e0 |
235 |
25 pF |
|||||||||||||||||||||
|
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.7 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.054 ohm |
3.7 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
4.45 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.009 ohm |
12.4 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.35 ohm |
1 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
235 |
12 pF |
|||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.35 ohm |
1 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
260 |
12 pF |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
SWITCHING |
30 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.038 ohm |
4.9 A |
DUAL |
R-XDSO-C8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
235 |
|||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9 A |
74 mJ |
3 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.11 ohm |
3 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
TO-261AA |
e3 |
30 |
260 |
155 pF |
|||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.63 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.7 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.06 ohm |
3.7 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
NOT SPECIFIED |
235 |
|||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.045 ohm |
3.3 A |
DUAL |
R-PDSO-C8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.17 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
6 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236 |
e3 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.75 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.085 ohm |
.75 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-236 |
e3 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.42 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.1 ohm |
1.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236 |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
2.2 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
40 |
260 |
||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.2 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.3 ohm |
1.2 A |
DUAL |
R-PDSO-G4 |
3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
260 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.7 W |
UNSPECIFIED |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5.2 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.03 ohm |
5.2 A |
DUAL |
R-XDSO-C8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.3 W |
UNSPECIFIED |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.9 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.06 ohm |
3.9 A |
DUAL |
R-XDSO-C8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.95 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.2 ohm |
1.95 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
6.4 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e1 |
40 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
6.4 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e1 |
40 |
260 |
||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.54 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.36 ohm |
.76 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.4 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.8 ohm |
.4 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
40 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.73 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.11 ohm |
1.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
25 pF |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
1.7 ohm |
.3 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.15 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
7.5 ohm |
.15 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
5 pF |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.24 ohm |
1.1 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0155 ohm |
8.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
|||||||||||||||||||||||
|
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BALL |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.2 A |
6 |
GRID ARRAY |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.22 ohm |
2.2 A |
BOTTOM |
R-PBGA-B6 |
1 |
Not Qualified |
e1 |
30 |
260 |
40 pF |
|||||||||||||||||||
|
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
.0016 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.2 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.06 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.2 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.06 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.01 ohm |
7.8 A |
DUAL |
R-PDSO-F5 |
DRAIN |
Not Qualified |
e3 |
260 |
|||||||||||||||||||||||||
|
|
Fairchild Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.12 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
10 ohm |
.12 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
5 pF |
|||||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6.25 W |
METAL |
AMPLIFIER |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.99 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3 ohm |
.99 A |
BOTTOM |
O-MBCY-W3 |
1 |
Not Qualified |
LOW THRESHOLD |
TO-205AD |
e3 |
10 pF |
|||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6.25 W |
METAL |
SWITCHING |
90 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.86 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
SILVER |
4 ohm |
.86 A |
BOTTOM |
O-MBCY-W3 |
1 |
DRAIN |
Not Qualified |
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
TO-205AD |
e4 |
10 pF |
|||||||||||||||||
|
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.052 ohm |
3.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
||||||||||||||||||||||
|
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0155 ohm |
8.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
|||||||||||||||||||||||
|
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
6 ohm |
.27 A |
BOTTOM |
O-PBCY-T3 |
1 |
Not Qualified |
ESD PROTECTION |
TO-226AA |
e3 |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.2 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.06 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.2 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.06 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
|
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8.3 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.025 ohm |
8.3 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.