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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT47H512M8WTR-25E:C	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm		4294967296 bit	1.7 V	SELF REFRESH						11.5 mm
MT18HTF12872AY-667D4	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3240 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT36HTF25672PY-667D1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4						45 ns
MT47H128M8CF-187E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.35 ns
MT47H128M8CF-25:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.4 ns
MT47H128M8CF-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	10 mm	.4 ns
MT47H128M8CF-3:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	10 mm	.45 ns
MT47H128M8CF-3L:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.45 ns
MT47H256M4CF-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.4 ns
MT47H256M4CF-3:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.45 ns
MT47H64M16HR-187E:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.35 ns
MT47H64M16HR-25:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.007 Amp	4,8	12.5 mm	.4 ns
MT47H64M16HR-25E:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.007 Amp	4,8	12.5 mm	.4 ns
MT47H64M16HR-25EL:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.4 ns
MT47H64M16HR-3:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.007 Amp	4,8	12.5 mm	.45 ns
MT47H128M8JN-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0				4,8	10 mm	.4 ns
MT47H128M8JN-3:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0				4,8	10 mm	.45 ns
MT47H64M16HW-3:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0			.007 Amp	4,8	12.5 mm	.45 ns
MT41J512M4JE-15E:A	Micron Technology	DDR3 DRAM	OTHER	82	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	415 mA	67108864 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm	667 MHz	12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	15 mm	.255 ns
MT47H128M8HQ-3L:G	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	11.5 mm	.45 ns
MT47H64M16HR-25EL:G	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	440 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.4 ns
MT47H64M16HR-3L:G	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.45 ns
MT18HTF25672PZ-667H1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	3330 mA	268435456 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	333 MHz	30.175 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4			.126 Amp		133.35 mm	.45 ns
MT47H128M16RT-187E:C	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.35 ns
MT47H128M16RT-3:C	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.45 ns
MT47H256M8EB-187E:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	11.5 mm	.35 ns
MT47H256M8EB-3:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.012 Amp	4,8	11.5 mm	.45 ns
MT47H512M4EB-187E:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	11.5 mm	.35 ns
MT47H512M4EB-25E:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	536870912 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.012 Amp	4,8	11.5 mm	.4 ns
MT47H512M4EB-3:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	536870912 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1			.012 Amp	4,8	11.5 mm	.45 ns
MT47R256M8EB-25E:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	.4 ns
MT47R512M4EB-25E:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	.4 ns
MT41J512M8THU-15E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT46H128M16LFDD-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	90 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-25 Cel		BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	208 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	260	.00001 Amp	2,4,8,16	9 mm	4.8 ns
MT46H256M32L4SA-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		90 mA	268435456 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	256MX32	256M	-25 Cel		BOTTOM		S-PBGA-B168				208 MHz		Not Qualified	8589934592 bit				30	260	.00001 Amp	2,4,8,16		5 ns
MT41J128M8JP-125:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	600 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260		8	11.5 mm	.1 ns
MT41J128M8JP-15E:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	490 mA	134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.125 ns
MT41J256M4JP-125:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.1 ns
MT41J256M4JP-15E:G	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	315 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.125 ns
MT41J64M16JT-125:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.1 ns
MT41J64M16JT-125E:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J64M16JT-15E:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	265 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.125 ns
MT41J64M16JT-187E:G	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.15 ns
MT48H4M16LFB4-8	Micron Technology	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	125 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.00001 Amp	1,2,4,8	8 mm	6 ns
MT48H4M16LFF4-10	Micron Technology	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	104 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e0			.00001 Amp	1,2,4,8	8 mm	7 ns
MT48H4M16LFF4-8	Micron Technology	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	125 MHz	8 mm	Not Qualified	67108864 bit	1.7 V	AUTO/SELF REFRESH	e0			.00001 Amp	1,2,4,8	8 mm	6 ns
MT48H8M16LFB4-10	Micron Technology	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	104 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.00001 Amp	1,2,4,8	8 mm	7 ns
MT48H8M16LFF4-10	Micron Technology	SYNCHRONOUS DRAM	OTHER	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54		1.9 V	1 mm	104 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e0			.00001 Amp	1,2,4,8	8 mm	7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.