OTHER DRAM 442

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA18ASF2G72PZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF4G72LZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA9ASF1G72PZ-2G6B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel		OPEN-DRAIN	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1333 MHz	3.9 mm		77309411328 bit	1.14 V						8	133.35 mm
MTA18ADF2G72AZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A1G16WBU-083E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX16	1G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A2G4WE-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	85 Cel	NO		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	12 mm
MT40A2G8NRE-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		17179869184 bit	1.14 V	SELF REFRESH						12 mm
MT40A4G4FSE-083E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9.5 mm		17179869184 bit	1.14 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT40A4G4NRE-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		17179869184 bit	1.14 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm
MTA18ASF2G72AZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT47H512M4THN-25E:H	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	217 mA	536870912 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel		3-STATE	512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH				.014 Amp		10 mm
MT52L1G32D4PG-107WT:B	Micron Technology	LPDDR3 DRAM	OTHER	178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX32	1G	-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B178		1.3 V	1 mm		11.5 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY	e1					12 mm
MT40A1G8WE-075E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	63 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel			1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH				.046 Amp	8	12 mm
MTA18ADF2G72PDZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT47H32M16BN-5E:DTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		10 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.6 ns
MT47H64M16HR-3:ETR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.45 ns
MT47H64M16HR-3:GTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.45 ns
MT41J128M16HA-15E:DTR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT46H128M32L2KQ-5WT:BTR	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			128MX32	128M	-20 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT47H32M16HR-25E:GTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			32MX16	32M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.4 ns
MT47H64M8CF-25E:GTR	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT41J256M16HA-093:ETR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J512M8RH-093:ETR	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
MT46H128M32L2KQ-48WT:CTR	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			128MX32	128M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT47H128M8CF-25E:HTR	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT47H64M16HR-25:HTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M16HR-3:HTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.45 ns
MT47H256M8THN-3:HTR	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		8 mm		2147483648 bit	1.7 V	SELF REFRESH	e1					10 mm
MTA18ADF2G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72HZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ASF2G72PDZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PZ-2G6D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3600 mA	2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel		OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1333 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.45 Amp	8	133.35 mm
MTA36ASF4G72LZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA72ASS8G72LZ-2G6B2	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel			8GX72	8G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA9ASF1G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel			1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA18ASF2G72PF1Z-2G6V21AB	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		5.8 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA9ADF1G72AZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel			1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		2.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A1G8WE-075E:D	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						12 mm
MT40A2G4WE-075E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	58 mA	2147483648 words	8	YES	COMMON	1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel			2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333.33 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH				.041 Amp	8	12 mm
MT40A512M16JY-075E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	105 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel			512MX16	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.05 Amp	8	14 mm
MTA9ASF51272PZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			512MX72	512M	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF1G64AZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel			1GX64	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A1G16WBU-075E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MTA144ASQ16G72PSZ-2S6G1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			16GX72	16G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		1236950581248 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G1B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G3A3	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF2G72PZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.