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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA72ASS8G72PSZ-2S6G1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			8GX72	8G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
AS4C1G8MD3L-12BCN	Alliance Memory	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						13.2 mm
AS4C16M32MS-7BCN	Alliance Memory	SYNCHRONOUS DRAM	OTHER	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			16MX32	16M		-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
MT40A4G4NRE-075E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm	17179869184 bit	1.14 V	SELF REFRESH						12 mm
MTA16ATF2G64AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel			2GX64	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF2G64HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel			2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ADF2G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel		OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA18ASF2G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA4ATF51264AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel			512MX64	512M		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		2.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA4ATF51264HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words				1.2	64	MICROELECTRONIC ASSEMBLY				95 Cel			512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm	34359738368 bit	1.14 V	WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA8ATF1G64HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel			1GX64	1G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA9ADF1G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA9ASF1G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
AS4C256M16D3B-12BIN	Alliance Memory	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT52L256M64D2LZ-107XT:B	Micron Technology	LPDDR3 DRAM	OTHER	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	268435456 words		YES	COMMON	1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16		.4 mm	105 Cel		3-STATE	256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	933 MHz	12 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.012 Amp		12 mm
EDF8164A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			128MX64	128M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.85 mm		11 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA164A2MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1 mm		11 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA164A2MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1 mm		11 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11 mm
EDFA364A3MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			256MX64	256M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.85 mm		12.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12.5 mm
EDFB164A1MA-GD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			512MX64	512M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.95 mm		12.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12.5 mm
EDFB164A1MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	253	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel			512MX64	512M		-30 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.95 mm		12.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12.5 mm
EDFP164A3PD-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	256	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.2	64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel			384MX64	384M		-30 Cel		BOTTOM	1	S-PBGA-B256		1.3 V	.8 mm		14 mm	25769803776 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT40A1G8SA-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A1G8SA-075:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	85 Cel	NO		1GX8	1G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1				8	11 mm
MT40A2G4SA-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A2G4SA-075:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A512M16JY-062E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	14 mm
MT40A512M16LY-062E:E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MTA18ASF2G72XF1Z-2G6V21AB	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		5.8 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
IS43TR81024BL-107MBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			1GX8	1G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		10 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260			14 mm
MTA9ADF1G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT61K256M32JE-12:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT61K256M32JE-13:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.3905 V	1.2 mm		12 mm	8589934592 bit	1.3095 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT61K256M32JE-14:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MTA9ADF1G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		2.7 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT36KSF2G72PZ-1G6E1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35	72	MICROELECTRONIC ASSEMBLY		8	1 mm	95 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm	154618822656 bit	1.283 V	SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MT61M256M32JE-10N:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M		0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260			14 mm
MT61M256M32JE-12N:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M		0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260			14 mm
MTA36ASF4G72PZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF4G72PZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT41J256M16HA-125:ETR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MTA18ADF2G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
IS43TR16128DL-107MBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	216 mA	134217728 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	128MX16	128M	1.283 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	934.58 MHz	9 mm	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260	.016 Amp	4,8	13 mm
MT51J256M32HF-70:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX32	256M		0 Cel		BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm	8589934592 bit	1.3095 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						14 mm
MT51J256M32HF-80:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX32	256M		0 Cel		BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm	8589934592 bit	1.3095 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						14 mm
MT61K512M32KPA-14:B	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30		.75 mm	95 Cel			512MX32	512M		0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	17179869184 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V						14 mm
MT40A4G4DVN-075H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2	4	GRID ARRAY				95 Cel			4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V				17179869184 bit	1.14 V	AUTO/SELF REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.