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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA16ATF2G64HZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G		0 Cel		DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA4ATF51264AZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,24	.6 mm	95 Cel		512MX64	512M	1.14 V	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1612.903 MHz	2.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		4,8	133.35 mm
MTA4ATF51264HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		2.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA8ATF1G64HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT44K16M36RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT40A4G4DVN-062H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.2	4	GRID ARRAY			95 Cel		4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V				17179869184 bit	1.14 V	AUTO/SELF REFRESH
MT40A8G4CLU-062H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel		8GX4	8G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A8G4CLU-075H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel		8GX4	8G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
IS43QR16512A-083TBL	Integrated Silicon Solution	DDR DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	353 mA	536870912 words	4,8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200 MHz	10 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	260	.025 Amp	4,8	14 mm
W632GG6NB-12	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words				1.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	95 Cel		128MX16	128M		0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm		7.5 mm	2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
IS43QR16256B-083RBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.058 Amp	8	13.5 mm
MTA9ASF2G72PZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES			72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		31.4 mm		3.9 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA9ASF1G72PZ-3G2J3	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
AS4C256M16D4-75BCN	Alliance Memory	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	235 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.044 Amp	8	13.5 mm
AS4C512M8D4-75BCN	Alliance Memory	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	196 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm	1333 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.044 Amp	8	10.6 mm
MTA16ATF4G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words					64	MICROELECTRONIC ASSEMBLY			95 Cel		4GX64	4G		0 Cel		DUAL	1	R-XDMA-N288					274877906944 bit
MTA36ASF8G72PZ-2G9B1	Micron Technology	DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words					72	MICROELECTRONIC ASSEMBLY			95 Cel		8GX72	8G		0 Cel		DUAL	1	R-XDMA-N288					618475290624 bit
MTA4ATF1G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words					64	MICROELECTRONIC ASSEMBLY			95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N288					68719476736 bit
IS43QR16256B-075UBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333.33 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.062 Amp	8	13.5 mm
IS43QR16512A-075VBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	375 mA	536870912 words	4,8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	10 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH			260	.025 Amp	4,8	14 mm
MT41K512M8DA-093:PTR	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	536870912 words	8	YES	COMMON	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm	1066 MHz	8 mm	4294967296 bit	1.283 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8	10.5 mm
MT44K16M36RB-093E:BTR	Micron Technology	DDR3 DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	100 Cel	3-STATE	16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075 MHz	13.5 mm	603979776 bit	1.28 V		e1			.225 Amp	2,4	13.5 mm
MT40A1G16KNR-075:ETR	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	360 mA	1073741824 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G		0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1333 MHz	7.5 mm	17179869184 bit	1.14 V			NOT SPECIFIED	NOT SPECIFIED	.036 Amp		13.5 mm
MT40A1G16KD-062E:E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		1GX16	1G	1.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A1G4HX-083E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH						11.5 mm
MT40A1G4HX-093E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH						11.5 mm
MT40A512M8HX-083E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH						11.5 mm
MT40A512M8HX-093E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH						11.5 mm
MT41K1G4RG-107:N	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm	4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.6 mm
MT41K256M16LY-107:N	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		7.5 mm	4294967296 bit	1.283 V	AUTO/SELF REFRESH		30	260			13.5 mm
MT41K512M8RG-093:N	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm	4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.6 mm
MT41K512M8RG-107:N	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm	4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.6 mm
MT46H128M32L2KQ-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		128MX32	128M		-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MTA18ASF1G72AZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF1G64HZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel		1GX64	1G		0 Cel		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA36ADS2G72PZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA72ASS4G72LZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT41K1G8SN-107:A	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K1G8SN-125:A	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13.2 mm
MT41K2G4SN-125:A	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		2GX4	2G		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K512M16HA-107:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT41K512M16HA-125:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35	16	GRID ARRAY		.8 mm	85 Cel		512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
EDF8132A3MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	178	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2	32	GRID ARRAY		.8 mm	85 Cel		256MX32	256M		-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B178	1.3 V	.85 mm		10.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1					11.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.