RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC28F512M29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V		16/32	e0			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
N25Q00AA11GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel	1GX1	1G	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10.3 mm			1.8
CAT28F512G12	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	64KX8	64K	0 Cel		YES	Matte Tin (Sn)		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V			e3	40	260	NOR TYPE	.00001 Amp	13.97 mm		120 ns	12	NO
CAT28F512GI12	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	64KX8	64K	-40 Cel		YES	TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm		120 ns	12	NO
PC28F640P33T85A	Numonyx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified			TOP	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1	40	260	NOR TYPE		10 mm		85 ns	3
MX25L51245GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel	128MX4	128M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		104 MHz	7.52 mm					536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1		e3	40	260			10.3 mm			2.7
MX25L51245GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel	128MX4	128M	-40 Cel			TIN		DUAL		R-PDSO-N8	3	3.6 V	.8 mm		104 MHz	6 mm					536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1		e3					8 mm			2.7
MX25U12835FZNI-08G	Macronix	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		27 mA	33554432 words	1.8		1.8	4	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel	32MX4	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	Not Qualified		SPI		134217728 bit	1.65 V	ALSO CONFIGURABLE AS 128M X 1		e3			NOR TYPE	.00002 Amp	6 mm			1.8
MX29GL128FHXFI-70G	Macronix	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V		8/16		40	260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	3	YES
MX66L1G45GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel	256MX4	256M	-40 Cel			TIN		DUAL		R-PDSO-G16		3.6 V	2.65 mm		104 MHz	7.52 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		e3					10.3 mm			2.7
MX66L1G45GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel	256MX4	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		e1					8 mm			2.7
W25Q64FWZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel	64MX1	64M	-40 Cel					DUAL		R-PDSO-N8		1.95 V	.8 mm		104 MHz	5 mm					67108864 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			1.8
MT29F1G01AAADDH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm					1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
EPCQ512SI16N	Altera	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			536870912 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel	512MX1	512M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G16	3	3.6 V	2.65 mm			7.5 mm		8 ms			536870912 bit	2.7 V			e4			NOR TYPE		10.3 mm			2.7
TC58NVG3S0FTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	1GX8	1G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					8589934592 bit	2.7 V								18.4 mm			3.3
MT29F1G08ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	128MX8	128M	0 Cel	1K	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MX25L1606EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			3
XCF128XFT64C	Xilinx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64	3	2 V	1.2 mm			10 mm	Not Qualified				134217728 bit	1.7 V	ASYNCHRONOUS READ MODE	4	e0	30	225	NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
XCF128XFTG64C	Xilinx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64	3	2 V	1.2 mm			10 mm	Not Qualified				134217728 bit	1.7 V	ASYNCHRONOUS READ MODE	4	e1	30	260	NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
JS28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				1073741824 bit	2.7 V		16/32	e4	30	260	NOR TYPE	.00024 Amp	18.4 mm	YES	110 ns	3	YES
MX29LV320EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B48		3.6 V	1.3 mm			6 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1	10	260	NOR TYPE	.000015 Amp	8 mm	YES	70 ns	3	YES
M29F016D70N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				16777216 bit	4.5 V			e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
MT28F004B3VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3SG-8T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
PC28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC28F256P33BFR	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC48F4400P0TB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1	30	260			13 mm		95 ns	3
PC48F4400P0TB0EH	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1					13 mm		95 ns	3
RC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
RC48F4400P0TB0EJ	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1					13 mm		95 ns	3
M29F080D70N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	1MX8	1M	-40 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				8388608 bit	4.5 V			e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DB55N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DB55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DB70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DB70N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DT55N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DT55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DT70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
AT29C040A-90JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	512KX8	512K	-40 Cel	2K	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		225	NOR TYPE	.0003 Amp	13.97 mm		90 ns	5	YES
M58LW032D110N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				33554432 bit	2.7 V		4/8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.