RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28F004B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	100000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
PC28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
MT28F008B5VG-8BET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B5VG-8TET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B5VG-8T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F800B5SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F800B5SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F800B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
AT29LV010A-15JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	15 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		QUAD	R-PQCC-J32	2	3.6 V	3.56 mm			11.43 mm	Not Qualified	20 ms		1048576 bit	3 V			e0		225	NOR TYPE	.00004 Amp	13.97 mm		150 ns	3	YES
AT29LV020-20JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	15 mA	262144 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1K	NO	TIN LEAD		QUAD	R-PQCC-J32	2	3.6 V	3.556 mm			11.43 mm	Not Qualified	20 ms	BOTTOM/TOP	2097152 bit	3 V			e0		225	NOR TYPE	.00004 Amp	13.97 mm		200 ns	3	YES
AT29C010A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42.037 mm		120 ns	5	YES
AT29C010A-12PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	1,1,1	NO	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0003 Amp	42.037 mm		120 ns	5	YES
AT29C010A-15PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42.037 mm		150 ns	5	YES
AT29C040A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms	BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0001 Amp	42.037 mm		120 ns	5	YES
AT29C040A-12PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	2K	NO	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms	BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0003 Amp	42.037 mm		120 ns	5	YES
AT29C010A-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD		DUAL	R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0		240	NOR TYPE	.00003 Amp	18.4 mm		120 ns	5	YES
AT29C040A-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL	R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms	BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0		240	NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
AT29C010A-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD	R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm		90 ns	5	YES
AT29C010A-90JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD	R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	1048576 bit	4.5 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm		90 ns	5	YES
AT29C512-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	512	NO	TIN LEAD		QUAD	R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		524288 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
MT28F400B5SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0	30	235	NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5SG-8T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	4194304 bit	4.5 V	INPUTS & OUTPUTS FULLY TTL COMPATIBLE; CONFG 5V OR 12V VPP; TOP BOOT BLOCK		e0	30	235	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MX29F800CBMI-70G	Macronix	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN	YES	DUAL	R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00005 Amp	28.5 mm		70 ns	5	YES
LE25S81MCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			8	SMALL OUTLINE				1.27 mm	90 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G8		1.95 V	1.75 mm		40 MHz	3.9 mm				8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm			1.8
LE25U81AMCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1048576 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G8		2.7 V	1.75 mm		40 MHz	3.9 mm				8388608 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm			2.7
MT29F2G16ABBEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F2G16ABBEAH4:ETR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
AT49LV001-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD	R-PQCC-J32	2	3.6 V	3.556 mm			11.43 mm	Not Qualified		BOTTOM	1048576 bit	3 V			e0		225	NOR TYPE	.00005 Amp	13.97 mm		90 ns	3	YES
AT49BV1614-90TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	50 mA	1048576 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	8,2,30	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	3	YES
AT29C256-12PI	Atmel	FLASH	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		Flash Memories	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD		DUAL	R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0			NOR TYPE	.0003 Amp	36.95 mm		120 ns	5	YES
AT49F040-12TI	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,496K	90 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,1	YES	TIN LEAD		DUAL	R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; 10000 WRITE CYCLES		e0		240	NOR TYPE	.0003 Amp	18.4 mm		120 ns	5	YES
AT29C020-12JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1K	NO	TIN LEAD		QUAD	R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms	BOTTOM/TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0003 Amp	13.97 mm		120 ns	5	YES
AT29C256-12JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	Tin/Lead (Sn/Pb)		QUAD	R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0	12	225	NOR TYPE	.0003 Amp	13.97 mm		120 ns	5	YES
AT29C256-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD		QUAD	R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms		262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C256-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD		QUAD	R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms		262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C257-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	TIN LEAD		QUAD	R-PQCC-J32	2	5.25 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.75 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C257-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	Tin/Lead (Sn/Pb)		QUAD	R-PQCC-J32	2	5.5 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0	30	225	NOR TYPE	.0003 Amp	13.97 mm		90 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.