RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
N25Q256A11ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	256MX1	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	2 V	2.5 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			30	260	NOR TYPE	.00002 Amp	10.3 mm			1.8
PC28F00AM29EWLE	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.00024 Amp	13 mm	YES	100 ns	2.7	YES
PC28F512M29EWLE	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		16/32	e1			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	2.7	YES
RC28F00AM29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		16/32	e0			NOR TYPE	.00024 Amp	13 mm	YES	100 ns	2.7	YES
RC28F00BM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			2147483648 bit	2.7 V		16/32	e0			NOR TYPE	.00048 Amp	13 mm	YES	100 ns	2.7	YES
JR28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F128M29EWHF	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JS28F128M29EWLA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V	UNIFORM BLOCK	8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
NAND128W3A2BNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	16MX8	16M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V		512	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		45 ns	3	NO
NAND256W3A2BNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V		512	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		45 ns	3	NO
PC28F064M29EWBX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWHX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWLX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F128M29EWHF	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	60 ns	3	YES
PC28F128M29EWHX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F128M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F128M29EWLX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PZ28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F032M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	2MX16	2M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified			33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	60 ns	3	YES
PZ28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWLX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWTX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
RC28F128M29EWHF	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e0			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
RC28F128M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e0			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
M25P16-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	4.9 mm			3
M25P16-VMN3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm			3
RC28F128P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE ; TOP BOOT	8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
N25Q128A13ESFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
PC28F256P30BFR	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e1			NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
PC48F4400P0VB0EF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	17 ns	1.8	NO
PF48F4000P0ZTQEJ	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	31 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B88						Not Qualified		TOP	268435456 bit				e1			NOR TYPE	.00021 Amp		YES	100 ns	1.8	NO
RC28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
RC48F4400P0VB0EJ	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	Tin/Lead/Silver (Sn/Pb/Ag)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e0	30	235	NOR TYPE	.00042 Amp	13 mm	YES	17 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.